真空沉積的 的英文怎麼說

中文拼音 [zhēnkōngchénjīde]
真空沉積的 英文
vacuum-deposited
  • 真 : Ⅰ形容詞（真實） true; genuine; real Ⅱ副詞1 （的確; 實在） really; truly; indeed 2 （清楚確實） cl...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 真空 : [物理學] vacuum; empty space; vacuo
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. By email, you can inquire further price information on knives, shredder and over bottle opener and beyond that in addition to deposition, shredder and obviously on vacuum sealing

    該企業為您提供瓶開啟裝置、碎紙機和真空隔水層、真空絕緣層以及沉澱作用、沉積作用和切碎機的報價。
  2. The dry plating method is a method for deposition of a metal on the surface of polymer material under vacuum and includes sputtering method, vapor deposition, vacuum deposition, etc

    干鍍是一種在真空下在聚合物表面沉積金屬的方法，包括濺射、氣相沉積、真空沉積等。
  3. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  4. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  5. The experiments results showed that when concentration of solid substance of the waste aqueous solution was condensated to 13 % ( w / v ) on vacuum, 95 % alcohol ( 1 : 1, v / v ) was added to the condensated solution to sedimentate polysaccharose, sedimentation was centrifugalized, repeated above treatment, and filtrate was collected and condensated on vacuum, then chlorogenic acid crystal of 76 % purity was obtained

    多次實驗結果表明，浸提液濃縮到固形物含量在13 %時，加入浸提濃縮液體積1倍量的95 %的乙醇沉澱並過濾掉多糖，反復處理兩次，濾液再經真空濃縮得到純度76 %左右的綠原酸。
  6. A filtered cathode vacuum arc deposition apparatus with a filtering duct working as second anode

    過濾管道作為第二陽極的磁過濾陰極真空弧沉積系統
  7. The results indicate that the optical performance and coating quality have been improved drastically by using ion - assisted deposition technology in the vacuum deposition, in comparison with the traditional thermal vapor deposition

    結果表明，與傳統的熱蒸發鍍膜工藝相比，在真空沉積過程牛採用離子束輔助沉積技術，可以大大提高膜層的光學特性及膜層品質。
  8. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  9. The organic electroluminsecence devices : ito / tpd / alq3 / al were fabracated by reactive evaporating deposition and dc glow discharge plasma enhanced reactive evaporating ways. the effects of the organic film thickness on the electronic and optical property have been investigated

    使用真空蒸發沉積技術和直流輝光等離子體輔助反應蒸發沉積技術制備了四層結構的有機電致發光器件： ito / tpd / alq _ 3 / al ，對制得的器件進行了電學和光學性能的測試。
  10. By the design of microwave electric field mode and microwave mode converter ( mmc ), the thesis participated in equipping an domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel resonant chamber in 2450mhz / 5 kw, introduced the basic machineries and functions of the sub - systems, including microwave system, gas - route system, vacuum system, detecting system and safeguard system

    論文通過微波場型和模式轉換器的設計，參與建立了一套2 . 45ghz 5kw帶有石英玻璃窗、水冷卻不銹鋼諧振腔的微波等離子體化學氣相沉積（ mpcvd ）系統（ mpcvd - 4型） 。論述了包括微波系統、氣路系統、真空系統、檢測系統和保障系統等結構的組成及基本功能。
  11. The main results are : grinding is favorable to improve surface smooth degree, while nitrided and slow deposition makes sic granules fine ; the width of coatings gap increased in order of grinding, nitrided and vacuum heat treatment, but gap defects in multilayer coatings could be removed by slow deposition ; temperature of maximum weight loss could be decrease to 600 by grinding, vacuum heat treatment or slow deposition, but it will increased to 800 after nitrided ; oxidation kinetics curves all varied with the coating modifications

    主要有：磨削改性有利於提高塗層表面平整度，氮化和慢沉積使塗層表面顆粒細化。塗層間隙寬度按磨削改性、高溫氮化、真空熱處理依次增大，而慢沉積可獲得無面缺陷的多層塗層。磨削改性、真空熱處理及慢沉積均使最大氧化失重溫度點提前至600 ，而高溫氮化則使最大失重點后移至800 。
  12. The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate

    利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。
  13. As a engineer, i have researched the technology of the deposition of the pyrolytic graphite grid ’ s rough in detail and deeply, in order that xuguang electric ltd. co. achieves the producing from the deposition of the pyrolytic graphite grid ’ s rough to grid. in this research, propane and nitrogen gases has been used in the deposition of the pyrolytic graphite grid ’ s rough at about 1800 and in vacuum

    為了使旭光電子股份有限公司順利實現從熱解石墨柵極毛坯沉積到柵極成品的生產，本人作為工藝研究人員，對熱解石墨柵極毛坯沉積工藝進行了詳細、深入的研究。在本課題研究工作中，採用了丙烷有機碳氫化合物氣體和稀釋用氮氣、氬氣，在高溫1800左右的真空條件下試驗研究了熱解石墨柵極毛坯的沉積。
  14. This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively

    本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。
  15. Study of crystalline polyaniline thin films deposited by vacuum evaporation

    真空蒸發沉積聚苯胺晶態薄膜的研究
  16. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  17. The experimental techniques ( such as sedimentation equipment, controlling the size and size distribution of powders, the concentration of suspension ) have been devised subtly. on the basis of theoretical and densification design, the w - mo - ti fgm has been obtained by particle settling and hot pressing sintering. the structures of specimen were observed by electron probe

    通過對實驗工藝，如沉降設備、原料粒度及粒度分佈的控制、懸浮液濃度等方面進行精細的設計，在理論設計和緻密化研究的基礎上，通過顆粒共沉降得到梯度沉積體，並通過真空熱壓燒結得到w - mo - ti功能梯度材料。
  18. The polytetrafluoroethylene ( ptfe ) is used as targets. fluorocarbon films are deposited onto polyimide ( pi ) and polypropyrene ( pp ) substrates, respectively. various discharge conditions ( voltage, vacuum and treating time ) are discussed

    本文利用射頻磁控濺射的方法，以聚四氟乙烯（ ptfe ）為靶材，在聚酰亞胺（ pi ）和聚丙烯（ pp ）基底上沉積氟碳膜，對不同工藝條件（放電功率、真空度、處理時間）進行了探討。
  19. After vaccum annealling in magnetic fileld, the films were studied by grazing incidence x - ray diffraction analysis and scan of x - ray diffraction. the results showed that fe atoms could be separated from cu matrix, which results in the increasing of the interface scattering, and enhance gmr effect

    通過對真空磁場熱處理前後的薄膜的gixa分析及xrd掃描發現，真空磁場熱處理能夠使沉積態薄膜中的fe原子從cu的晶格中定向析出，這使得熱處理后薄膜內部的界面散射增多，能夠有效的提高薄膜的巨磁阻值。
  20. Different from fabricating sbd with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ). the sbd with rectifying performance was developed, using si epilayer as the active layer

    利用我們自行研製的超高真空化學氣相沉積（ uhv - cvd ）技術外延了亞微米級的si薄膜，成功的製作了具有整流特性的高頻薄硅肖特基二極體的原型器件。
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