短時退火 的英文怎麼說

中文拼音 [duǎnshítuìhuǒ]
短時退火 英文
short cycle annealing
  • 短 : Ⅰ形容詞（空間、時間兩端之間的距離小） short; brief Ⅱ動詞（缺少; 欠） lack; owe Ⅲ名詞1 （缺點） we...
  • 時 : shí］Ⅰ名1 （比較長的一段時間）time; times; days:當時at that time; in those days; 古時 ancient tim...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. We also find that the pinning phenomenon gradually disappear with thicker single layer of the [ pt / mn ] n films, and firstly prepared permalloy before the deposition of [ pt / mn ] n multiplayer more easily form anti - ferromagnetic structure than another caseo maybe this is a good way to shorten the annealing time

    我們還發現隨著單層厚度的增加釘扎現象逐漸消失，而且先沉積nife層，后沉積pt / mn多層膜的情形更容易獲得反鐵磁結構。這可能是縮短退火時間的一種好方法。
  2. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。
  3. At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly

    同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。
  4. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  5. The mixture of tungsten and graphite powders would tranform into solid solution by ball milling for little time, and wc with high purity was obtained by treatment at a lower temperature. the milling time, producing energy and the disadvantage of contamination was reduced, which is favorable for the future application in the manufacture of tungsten carbide

    W 、 c粉體經過短時間球磨形成固溶體后，較低溫度下退火就可以得到純度很高的wc ，可以大大縮短球磨時間，從而避免了過渡的污染而且降低了能耗，具有工業實際應用前景。
  6. When anneal temperature is below 600, the crystallinity can not be improved obviously for short anneal time, but the crystallization trend appear

    退火處理后的薄膜結構分析表明，退火溫度低於600時，短時間退火不能明顯改善結晶狀況，但結晶趨勢明顯。
  7. So to shorten annealing temperature and time is a vital issue

    因此，降低退火溫度，縮短退火時間是一個急待解決的問題。
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