硅外延 的英文怎麼說

中文拼音 [guīwàiyán]
硅外延 英文
silicon epitaxy
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  1. Luminescent properties of c implanted epitaxial silicon

    外延硅的光致發光特性
  2. N - channel silicon planar epitaxial jfet

    通道硅平面型外延接面型場效晶體管
  3. Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers

    半導體工藝材料的檢驗.硅晶體外延層缺陷種類和缺陷密
  4. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  5. In addition, the growth mechanism on porous silicon has been discussed in view of growth kinetics

    從晶體生長動力學角度分析了多孔硅上外延硅的生長機理。
  6. The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates

    實驗中外延金剛石薄膜採用熱絲cvd法生長，生長於事先電泳沉積在硅襯底的金剛石微粒上。
  7. Specification for silicon epitaxial wafer for microwave power transistor

    微波功率晶體管用硅外延片規范
  8. Silicon extending slice

    硅外延片
  9. Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques

    硅外延層電阻率的面接觸三探針.測試方法
  10. The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer

    本文的具體工作可歸納為： 1 ）薄硅外延片研製高頻肖特基二極體的原型器件。
  11. B ) sbd was made using the si epilayer as the active layer, qualified with a set of device technology

    B ）在薄硅外延片的生長基礎上，探索製作肖特基二極體的相關工藝，研製高頻sbd原型器件。
  12. Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method

    半導體無機材料的試驗.用紅外線干涉法測量硅外延生長
  13. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  14. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  15. As a result, the cutoff frequency of sbd is limited at a lower level. now, we can grow sub - micro film of silicon using uhv / cvd technology. then we make an original device sbd of high frequency

    現在，我們浙江大學硅材料國家重點實驗室利用uhv cvd技術，生長出亞微米厚的薄硅外延層，在此外延層上研製出高頻肖特基二極體原型器件。
  16. Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large

    但長期以來，由於薄硅外延生長技術的限制，無法生長出優質的厚度小於2 m的薄硅外延層，使硅肖特基二極體的串聯電阻無法降的更低，限制了其截止頻率的提高。
  17. 3. finally, we explore a serial of other fabrication technology of sbd of high frequency, including oxidation techniques, photoetching techniques and vacuum deposition. an original sbd of high frequency has been made

    最後，利用所生長的薄硅外延片，探索出其它一系列相關的高頻肖特基二極體的製作工藝，包括氧化工藝、光刻工藝、真空鍍膜工藝等，製作出了高頻肖特基二極體的原型器件。
  18. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  19. After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform

    優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。
  20. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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