硅柵結構 的英文怎麼說

中文拼音 [guīzhàjiēgòu]
硅柵結構 英文
silicon gate structure
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  2. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  3. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  4. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  5. Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research

    本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。
  6. By computer simulation and calculation, the relation between the reflectivity and the structure parameters of such gratings are presented. these results show that a glass grating can achieve antireflection over almost the whole visible light waveband for unpolarized light, while a silicon grating with a columned grid substrate also can achieve low reflectance over as a broad field of view as a tapered silicon grating structure can, but it can be fabricated more simply

    理論分析發現硅基底的圓柱形網格光柵能夠在比較大的視場獲得比較低的反射率，具有特定參數結構的低反射率硅基底圓柱形網格光柵可以獲得與專為大視場設計的金字塔形網格光柵相同的視場角，但它的製作更容易，更簡單。
  7. Silicon grating is a period construction fabricated on the silicon wafer by micro fabrication techniques as ultraviolet lithography and anisotropic etching

    硅光柵是利用紫外光刻、各向異性腐蝕等硅微加工技術在矽片上製作的周期結構。
  8. The first section includes the theoretical and numerical analysis for diffractive optics elements and the second one gives the results of the fabrication experiments of diffractive optics elements. in the first section, we analyzed the antireflection of the diffraction optics elements. binary optics processing methods may be applied to a glass or silicon substrate to generate an array of small columns in order to enhance transmission

    在理論分析的部分，本論文完成的主要工作是用耦合波理論分析了在玻璃或硅基底上製作具有亞波長結構的圓柱形網格陣列以實現對入射光的增透作用，為此而編寫的程序實際上也可以用來分析計算單位周期內具有任意麵形的網格光柵的電磁場衍射特性。
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