硅襯底 的英文怎麼說

中文拼音 [guīchènde]
硅襯底 英文
silicon base
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  1. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  2. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  3. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  4. A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented. the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors. the substrate pn junction can be realized in standard silicon technologies without additional processing steps

    提出了一種新的方法來減小硅襯底損耗提高集成電感的q值：在硅襯底形成間隔的pn結隔離以阻止渦流減少損耗，這種方法工藝簡單且與常規硅集成電路工藝兼容。
  5. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  6. These solutions are basically focused on reducing low - si substrate conduction and loss, resulting in an elimination of wave propagation in the substrate, and ther efore improving the performance of the passive elements. they are accompanied by drawbacks

    以上方法基本是集中在改善低阻硅襯底的傳導和降低損耗，來改善射頻微波無源器件的性能，但這些方法均存在許多不同程度的缺陷。
  7. The bst thin film grown on porous silicon substrate has been investigated for the first time. experiment results indicate that the porosity of porous silic

    探索碩究了用脈沖檄光沉積的方法在多孔硅襯底上制備bst薄膜。
  8. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  9. The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates

    實驗中外延金剛石薄膜採用熱絲cvd法生長，生長於事先電泳沉積在硅襯底的金剛石微粒上。
  10. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  11. Property analysis of humidity sensor of nanometer batio3 on si

    硅襯底納米鈦酸鋇濕敏元件特性分析
  12. Many approaches have been proposed to achieve better rf / microwave performance of passive elements on low - r si substrates. the use of high - resistivity ( > 3000q. c / ? silicon substrate is suggested to mimic the low - loss semi - insulating gaas substrate, but this is an uncommon option for current silicon substrate

    然而，由於低阻硅襯底的高頻損耗，在射頻微波應用中，要在低阻硅襯底上實現高q值的無源器件，尤其是電感，是相當困難的。
  13. We use the laser output ( 320 nm, 200 fs ) of optical parametric amplifier ( opa ) in < wp = 5 > an active passive mode - locked femtosecond ti - sapphire laser operating at a repetition rate of 1khz as a exciting resource to develop optically pumped stimulated emission of zno thin films. when rectangular stripe laser irradiates thin films, optical resonant cavity is naturally formed between two nanocrystallites along with the rectangular laser stripe and planar weveguide confines the light scattering

    利用飛秒激光器作為光泵浦激發光源，研究了氧化鋅薄膜的光泵浦受激發射，當條形光斑輻照薄膜樣品時，將沿著光斑條由氧化鋅納米晶面自然地形成光學諧振腔，由於平面介質波導結構限制光散射，所以成功地觀測到二氧化硅襯底上的納米氧化鋅（ zno ）薄膜的紫外受激發射。
  14. Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively

    隨著光通訊產業的迅速發展，特別是集成光學的發展，迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體，來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠（ sol - gel ）生長技術及其原理。
  15. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  16. Preparation and properties of si3n4 films on sapphire and si substrates

    藍寶石和硅襯底上氮化硅薄膜的制備和性能研究
  17. V groove silicon substrate

    型槽硅襯底
  18. A study on photosensitivity characteristics of ba1 - xsrxnbyti1 - yo3 thin film on sio2 si substrate

    硅襯底ba1 - xsrxnbyti1 - yo3薄膜光敏特性的研究
  19. The size of these openings is according to the feature appearance of the final structure

    首先在硅襯底的掩膜上要開一組圓孔，圓孔的尺寸與最終的輪廓相對應。
  20. The choices of components in the final polishing slurry, specially alkali, surfactant and chelating agent have been discussed

    精拋作為拋光過程中的最後一步，精拋的結果決定了硅襯底拋光片質量的好壞。
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