硅襯片 的英文怎麼說
中文拼音 [guīchènpiān]
硅襯片
英文
silicon backing wafer-
A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。The accelerometer which has simple fabricated process and high sensitivity and small parasitic capacitance and residual stress is hybrid integrated with the interface circuit using ic nude chip. so the density of the package is increased, and the noise of the sensing system is decreased. these found the base of capacitive accelerometer module using the mcm method
該傳感器製作工藝簡單，靈敏度高，支撐梁採用u型，減小了刻蝕后的殘余應力，用玻璃作為襯底，減小了襯底和硅可動質量塊間的寄生電容，且把傳感器晶元和用ic裸片製作的介面電路集成在一起，提高了封裝密度，減小了傳感器系統的噪聲，為採用mcm技術製作電容式加速度傳感器模塊打下了基礎。The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed
隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。The choices of components in the final polishing slurry, specially alkali, surfactant and chelating agent have been discussed
精拋作為拋光過程中的最後一步，精拋的結果決定了硅襯底拋光片質量的好壞。The experiment results showed we had got well nanowires on si and sapphire substrate and the au and ag act catalyst respectively, we got zno nanowires array on si and sapphire substrate using the ag as catalyst. 2. we measured the pl spectrum of zno nanowires samples excited by an ultraviolet fluorescence spectrophotometer in different wavelength
實驗結果顯示分別採用金和銀為催化劑在硅襯底和藍寶石襯底上制備出結晶質量較好的納米線，其中在銀催化的硅基片和藍寶石基片上制備出排列整齊的納米線陣列。Slicing and lapping are two basic procedures in wafer substrate process and are introduced firstly in this thesis
切片和研磨工序是硅器件襯底片制備中的兩道基本工序。本文首先介紹了這兩道工序。Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig
重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。Monolithic microwave integrated circuit ( mmic ) designs on si substrates have become an important topic in recent years. with constantly increasing frequencies in communications and integrated circuits, there are great demands for low - cost, miniature microwave transmission lines
採用以硅材料為襯底及與ic兼容的微電子機械（ mems ）技術，能夠實現微波無源分立元件與信號處理電路的單片集成化，最終形成完整的和智能化的在片系統。To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. three parts are studied in our work, firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied, then put it into the process of solar cell and compare the capability of solar cell in two process
作為該項研究的先期工作，首先以p型（ 100 ）太陽電池用直拉矽片為實驗樣品，摸索出熱退火的最佳處理溫度；然後用常規工藝制備了單晶硅太陽電池，測試效率；結果發現用經過熱處理的矽片襯底制備的太陽電池比用沒有經過熱處理的矽片襯底制備的太陽電池其效率有明顯改善。分享友人