硅質沉積 的英文怎麼說

中文拼音 [guīzhíchénjī]
硅質沉積 英文
siliceou ediments
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. The lower part formed in a littoral - epeiric environment, is a series of elastic rocks, partly contains carbonate rock and metamorphic basic volcanic rocks and the upper part formed in a bathypelagic environment is a series of sediments with chert, partly contains metamorphic basic volcanic rocks

    其下部為一套濱淺相碎屑巖，局部夾碳酸鹽巖、變質基性火山巖；上部為一套深水沉積巖系夾硅質巖，局部夾變質基性火山巖。
  2. The fluids upwelled to seafloor along fault thus ore - forming metals accumulated. 2. this paper indicated the definition the hydrothermal sedimentary rocks. the definition is a group of especial sedimentary rocks forming at the temperature ranging from 70 ? to 350 ? ( or more high ) through sedimentation and synsedimentary metasomatism in the seafloor

    區內的熱水沉積巖主要有硅質巖、鈉鉀長石巖、重晶石巖、透閃石巖、碳酸鹽巖、綠泥石巖和鐵白雲石斑點千枚巖，它們往往與熱水沉積礦體緊密伴生。
  3. The coqen basin in xizang lies between the bangong - nujiang suture zone and yarlung zangbo suture zone, and once extended northwards and southwards, respectively centred by the qiekan - goicang - asog rift zone as the center of deposition and subsidence during the middle jurassic to the early creatceous. ( 1 ) during the middle - late jurassic, the rift zone was occupied by deep - water turbidites, radiolarian siliceous rocks, shallow - water carbonate rocks, clastic rocks and basic - ultrabasic rocks, while both sides of it by littoral and shallow marine elastic rocks and carbonate rocks

    摘要位於班公湖怒江縫合帶與雅魯藏布江縫合帶之間的措勤盆地，在中侏羅世早白堊世期間具有以且坎古昌阿索裂谷帶為沉積、沉降中心向南北兩側展開的古地理格局：中晚侏羅世時期，裂谷帶內由深水濁積巖、放射蟲硅質巖和淺水碳酸鹽巖、碎屑巖巖片及基性超基性巖等組成；裂谷帶兩側由濱淺海相碎屑巖和碳酸鹽巖組成。
  4. The immediate host siliceous rocks of typical deposits ( jinya, gaolong ) are of hydrothermal sedimentary origin. gold ore bodies are layer - like and generally concordant with their host rocks. abundant relict synsedimentary fabrics are preserved in the ores

    典型礦床（金牙、高龍）中的含礦硅質巖屬熱水沉積巖，礦體形態主要為與地層整合的層狀和似層狀，礦石具有大量同生沉積的標型組構。
  5. Algae - rich carbonate of cambrian is typical sediment of foreslope facies in sandu and danzhai, eastern guizhou province. after sediment, it experiences many changes of diagenetic environment, and takes place much diagenetic altercation, among which the biggest is salt water dolomilization, and then is compaction, recrystallization, pressure solution, organic dissolution, burial dolomilization, cementation and silicification

    貴州省東部三都丹寨地區中上寒武統富藻碳酸鹽巖是典型的斜坡沉積，其在沉積后漫長的地質歷史時期內，經受了諸多成巖環境的改造，發生了極大的成巖變化，最大的成巖變化為鹹水雲化，其他的成巖作用有壓實作用重結晶作用壓溶作用有機溶解作用埋藏雲化作用膠結作用及硅化作用等。
  6. ( 3 ) box model results indicate that the net flux of suface water, flowing into the south china sea, is about 8. 364x 106t / s and the net flux of water, which is under suface water, flows out of the south china sea at about 8. 229x 106t / s on annual average. the quantity of din, reactive phosphate or reactice silicate, which sinked into deep water in the form of particle matter, was about 78, 71 and 80 percent of total quantity of din, reactive phosphate and reactive silicate, which flowed into suface water in any ways. but in these particle matters, ahout2. 9 percent of particle nitrogen, 2. 0 percent of particle phosphor and 8. 2 percent of particle silicon sinked into sediment

    （ 3 ）據「箱式模型」估算年度平均南海表層水通量約為8 . 364 10 ~ 6t s的凈輸出，表層之下水體約有有8 . 229 10 ~ 6t s的凈輸入；同時到達表層溶解態無機氮、活性磷酸鹽和活性硅酸鹽總量中約有78 、 71和80隨顆粒物質下沉到深海；其中未被分解而進入海底沉積物的顆粒態氮、磷和硅僅占由表層沉降深海顆粒態氮、磷和硅的2 . 9 、 2 . 0和8 . 2 。
  7. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  8. Qimanyuter ophiolite melange crops out 1 - 3 km in width and extends ew - nee about 50 km, parallels to the kunlun mountains. qimanyuter ophiolite melange is composed mainly of serpentinite ( metapyrolite ), peridotite, bedded gabbro, grbbro, diabase sheet and pillow - like and massif basalt as well. associated sedimentary rocks with this ophiolite melange include silicalite, dark gray silicalite and thin - bedded limestone

    該混雜巖帶所包含的主要巖性單位包括：蛇紋巖（變輝橄巖） 、橄欖輝石巖、層狀輝長巖、輝長巖、輝綠巖席、枕狀、塊狀、杏仁狀玄武巖，與之共生的沉積巖為紫紅色硅質巖、深灰色硅質巖、薄層灰巖等。
  9. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  10. When deposit temperature is raised from 450 to 500, the size of nano - crystals is increased from l ~ 4nm to 5nm. a few 8162 nano - crystals are also found, which are derived from the amorphous oxide in the matrix. simultaneity, some special patterns appear while nano - crystals move and rearrange

    薄膜中的結晶程度隨沉積溫度的升高而提高，納米硅晶粒的尺寸由450時的1 4nm增大到5nm以上，氧化程度也隨之加深，非晶介質中的氧化物逐漸向氧化硅的晶態轉變，同時納米顆粒在晶粒遷移和重排過程中局部形成特殊形貌的團聚物。
  11. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  12. The silicon and pod accumulated on the base of trichomes. the results of external experiment demonstrated that pod is essential for silica deposit, addition of omm, 0. 5mm and 2mm hssio4 to reaction systems had no effect on the activity of pod

    體外模擬結果顯示pod是硅沉積的一個必需的催化物質，而硅酸在0mm0 . 5mm ， 2mm ，濃度下，對pod活性無明顯影響；但在5 ， 10mm濃度下，抑制pod活性。
  13. When thf sputtering temperature is low, the films have the patterns of typical amorphous structure. al can only exists in the films by the form of al clusters and si can only exists in the films by the form of si or siox ( x < 2 ). the properties of photoluminescence ( pl ) and ple from the films have been studied

    當薄膜沉積的基片溫度較低時，薄膜呈現非晶結構，薄膜中的鋁主要是以單質鋁的團簇形式存在於非晶的sio _ x （ x 2 ）中，而多餘的硅則以單質或低價氧化物的形式存在於膜中。
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