磷擴散源 的英文怎麼說
中文拼音 [līnkuòsǎnyuán]
磷擴散源
英文
phosphorous diffusion source-
The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。The results from sds - page presented that there were three female specific protein subunits with molecular weights of 123 kd, 120 kd and 91 kd, respectively. we can conclude the higher molecular compose of two subunits ; the results from two dimension electrophoresis showed the isoelectric points of two female - specific spots with molecular weight of about 120kd were 5. 5 and 5. 7. immunodiffusion reactions demonstrated that vg existed both in female fat body and hemolymph, which as vn was deposited in the ovary, while not in the male
Page電泳結果表明：麗蠅蛹集金小蜂明顯存在2條雌特異性帶-卵黃蛋白，分子量分別為181kd和136kd ； sds - page電泳分析：存在3條雌特異性帶，其分子量為123kd 、 120kd和91kd ，由此，可推定卵黃原蛋白（ vitellogenin ， vg ）和卵黃磷蛋白（ vitellin ， vn ）由2個蛋白組成，其中分子量較大的蛋白由2個亞基組成；雙向電泳結果顯示，在120kd附近有兩個特異性點，其等電點為5 . 5和5 . 7 ；雙擴散表明，麗蠅蛹集金小蜂卵黃磷蛋白的抗血清與雌隱成蟲蟲體、脂肪體、血淋巴和卵巢勻漿液均有免疫沉澱反應，而與雄蜂血淋巴無免疫反應，說明了vg與vn具有免疫同源性，是雌特異性蛋白，且由脂肪體合成。As far as the new technology of selective diffusion, the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon. afterwards, a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon
在選擇性擴散新工藝中，我們採用絲網印刷電極的方法在矽片的電極位置印刷濃度較高的磷漿（摻磷sio _ 2乳膠） ，在非電極區噴塗一層濃度較低的磷源，擴散后形成重摻雜和輕摻雜。分享友人