空穴對 的英文怎麼說

中文拼音 [kōngxuéduì]
空穴對 英文
hole pair
  • : 空Ⅰ形容詞(不包含什麼; 裏面沒有東西或沒有內容; 不切實際的) empty; hollow; void Ⅱ名詞1 (天空) s...
  • : 名詞1 (巖洞; 窟窿) cave; cavern; grotto 2 (動物的窩) den; hole 3 (墓穴) grave4 [中醫] (穴...
  • : Ⅰ動詞1 (回答) answer; reply 2 (對待; 對付) treat; cope with; counter 3 (朝; 向; 面對) be tr...
  1. Effects of xylem cavitation and embolism on plants

    木質部和栓塞化植物的影響
  2. Exciton is electron-hole pair held together by their mutual coulomb interaction.

    激子就是由電子和在相互間的庫侖力作用下,相互維持在一起的電子--空穴對
  3. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明,共混復合后,其光電導性能表現出負效應,並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因,同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。
  4. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

    光致發光過程就是高能量光子照射到晶體上之後,晶體所產生的電子一空穴對的輻射復合過程。
  5. Based on this model, the effects of geometric and structural parameters, such as injection pressure, rear pressure, length - diameter ratio, inlet round angle - radius ratio and non - axis symmetry of nozzle, on the distribution of the cavitation inside the nozzle are analyzed

    基於這一模型進一步分析了噴射壓力、背壓和噴孔長徑比、噴孔入口圓角比、非軸稱噴孔等幾何結構參數噴孔內分佈的影響。
  6. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同,我們低摻雜時的電致發光和光致發光進行了比較,並提出:在電致發光中, rubrene的摻入在pvk鏈間相當于陷阱,其陷阱電子pvk的吸引,使一部分在光致發光中不參與能量傳遞的pvk參與了這種陷阱作用,使得在電致發光中不參與能量傳遞的pvk可能比光致發光中少。
  7. Under this condition, this thesis offers a study on cavitation characteristics caused by two main accidental conditions : power off and system fluid off

    本文即是針動力失靈和系統斷流兩種主要事故工況下,所引起的動力系統中的特性作以研究。
  8. This should be an incentive to apply the rrpa method with non - linear effective lagrangians to study other systems such as unstable nuclei near drip lines. for nuclei with the extreme value of n / z, low - lying collective excitations are found in isovector dipole modes, which are mainly due to the particle - hole excitation of weakly bound states near fermi surface and the isospin mixture effect

    將相論無規位相近似理論推廣應用到奇特核集體激發態的研究,發現于奇特核的同位旋矢量激發模式在很低能量下會出現軟模式的巨偶極共振,這主要是由於費米面附近粒子-激發所形成的。
  9. The relativistic random phase approximation ( rrpa ) is a relativistic extension of the random phase approximation for studying microscopically nuclear dynamical excitations and giant resonances. the consistency of rrpa calculations requires two aspects : first, it demands that the relativistic mean - field wave " function of nucleus and the particle - hole residual interactions in the rrpa are calculated in a same effective lagrangian. second, the consistent treatment of rrpa within rmf approximation requires the configurations including not only the pairs formed from the occupied fermi states and unoccupied stat es but also the pairs formed from the dirac states and occupied fermi states

    自洽的相論無規位相近似理論的自洽性要求有兩方面的內容:第一,描述原子核的激發態性質和基態性質時必須從同一個有效的拉矢量出發;第二,相論無規位相近似計算,不但要考慮正能的粒子-組態的貢獻,而且還要考慮從fermi海核子態到dirac海負能核子態形成的激發的貢獻。
  10. This prowess in modern chipmaking know - how didn t come out of a vacuum - rather, it came out of the hermetically - sealed clean rooms of the most advanced r d department in the semiconductor industry

    這種現代晶元製造知根知底的能力並非是來風,而是來自於半導體工業中最先進的r & d部門的封閉且潔凈的實驗室。
  11. No wonder hong kong feels threatened by the migration of listings to its mainland rival

    因此,港方所感到的來自大陸競爭手的威脅也並非來風。
  12. There comes a time in every would be journalists life where he makes a critique that happens to be unfounded

    現在每個記者都可以任何一件事進行批評,哪怕這是來風。
  13. Xps showed that there were much chemical absorbing water on the ti _ ( 2 ) film surface which mainly existed in form of - oh, and the contents of - oh was increasing with the annealing temperature. hydrophilic property became better with the annealing temperature ; the essential relation between the changing of contact angle and light - induced - electrons and light - induced - cavities was studied in details. the photocatalysis of samples without heat treatment was very bad, but that of samples after heat treatment was much better

    Xps的分析表明:試樣的表面含有大量的化學吸附水,主要以羥基的形式存在,隨著熱處理溫度的升高,吸附羥基的含量在增加;親水性能測試表明:隨著氧氣分壓的變化,其親水性能變化不大,隨著熱處理溫度的增加,試樣的親水性能在變好,並從理論上解釋了親水性能光照前後變化和光生電子?空穴對之間的本質關系。
  14. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型,溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件,且電子施主界面態密度器件特性的影響遠大於界面態.特別是溝道雜質濃度不同,界面態引起的器件特性的退化不同.溝道摻雜濃度提高,同樣的界面態密度造成的漏極特性漂移增大
  15. On the basis of in - site test of piles in two great bridges in one expressway project, this paper investigates the application of this technique applying to cast - in - situ pile in gravel, studies the bearing properties of grouted piles, examines the practicality of high - strain test use in grouted piles and analyses the grouted piles with vesic theory

    根據現場樁基動、靜載試驗,卵石層中樁端壓力灌漿樁的承載特性進行了分析;探討了基樁高應變case法在灌漿樁中的適用性;並應用vesic球形擴張理論灌漿結果進行了分析。
  16. 3 the carrier transportation and transition in led active layer had been analyzed. the larger number of quantum wells are in active layer, the lower carrier density will be, and the better confinement of carrier is

    ) y方向上的有效質量減小,而輕則具有負的有效質量,這器件電注入和光輻射復合是有利的。
  17. The proposed methods can be used as data preparation techniques to detect bad data and fill the blank with a more accuracy value in an initial series. the modeling accuracy of grey system is greatly improved by such methods

    2 、針序列中含有或不良數據的情況,將參數估計與不良數據辨識理論作為數據預處理技術應用於灰色系統建模,使得模型預測結果更為精確。
  18. Mgf plays the role of segregation. the third method is to enhance the oel by means of making complex with n - vi compounds. el - vi compounds are very stable and possessing higher electron mobility than organic materials

    但電子不是在真中,而是在固體中加速的,我們稱它為固態陰極射線發光或類陰極射線發光,它的激發態是成的電子及
  19. By analyzing their energy offset on the interfaces, we found that the introduction of ii - vi compounds replaces the original steep barrier with ladder - like barriers. the injection probability becomes the production of two injection probabilities through lower barriers and become larger than the original one. in chapter 5 we want to utilize the deeper, dynamical ( in addition of static ) properties of semiconductor to reinforce the luminescence of oel

    為使類陰極射線發光同有機電致發光集成,我們設計了非稱結構al sioz mnppvn , mn ppv中的發光是由於從sioz出來的電子和從ld注人的的復合,而由於sioz中的電子的倍增過程,從sioz層出來的電子能量不是單一的,而有一個從低能到高能的分佈。
  20. In addition, when the electron - cavity pairs migrates to the films surface, there is adequate water to react with these electron - cavity pairs in good time. this not only reduces the composition probability of the electron - cavity pairs but also produces a large number of highly active hydroxyls that enhances the photocatalytic ability

    紫外光照射下產生的電子-空穴對遷移到薄膜表面后,有足夠的水分子及時地與發生反應,不但減少了電子-的復合機率,而且產生大量的強活性羥基,使薄膜的光催化性增強。
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