空穴發射 的英文怎麼說

中文拼音 [kōngxuéfāshè]
空穴發射 英文
hole-emitting
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 發 : 名詞（頭發） hair
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  1. The density of holes in the base is less than the density of free electrons in the emitter and collector.

    基極中空穴的密度小於發射極和集電極中自由電子的密度。
  2. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

    光致發光過程就是高能量光子照射到晶體上之後，晶體所產生的電子一空穴對的輻射復合過程。
  3. Simulation results show that better atomization can be realized by enhancing the cavitation intensity via increasing the injection pressure difference or decreasing the nozzle inlet round angle - radius ratio

    通過模擬計算可知，提高噴射壓差和減小噴孔入口圓角半徑都可以提高空穴強度，同時也發現提高噴孔長徑比可以使空穴在噴孔出口截面上分佈更為均勻。
  4. The hurricane blast of stellar winds and blistering ultravioletradiation within the cavity is now compressing the surrounding walls ofcold hydrogen. this is triggering a second stage of new star formation

    空穴中星風的擊波和熾熱的紫外線輻射正在壓縮周圍冷氫氣形成的墻。由此觸發了第二階段新恆星的形成。
  5. Using the typical moled structure glass / dbr / ito / htl / eml （ etl ） / al ， the el spectrum narrowing, intensity enhancement in the normal direction as well as emission intensity redistribution in space are observed. by the introduction of single layer silver film instead of the dbr / ito multilayer, a ( / 2 - length cavity is obtained. using this kind of microcavity, three - color single mode pl from a single material alq and three - color single mode el from double layers pvk / alq are achieved for the first time

    通過以金屬銀替代多層結構的dbr / ito ，既作為反射鏡，又作為el器件中的空穴注入電極，設計出腔長只有（ / 2的超短微腔，採用同一種寬譜帶材料alq作為光發射層，首次報道了三基色單模光致發光和pvk / alq雙層結構的三基色單模電致發光。
  6. Mgf plays the role of segregation. the third method is to enhance the oel by means of making complex with n - vi compounds. el - vi compounds are very stable and possessing higher electron mobility than organic materials

    但電子不是在真空中，而是在固體中加速的，我們稱它為固態陰極射線發光或類陰極射線發光，它的激發態是成對的電子及空穴。
  7. By analyzing their energy offset on the interfaces, we found that the introduction of ii - vi compounds replaces the original steep barrier with ladder - like barriers. the injection probability becomes the production of two injection probabilities through lower barriers and become larger than the original one. in chapter 5 we want to utilize the deeper, dynamical ( in addition of static ) properties of semiconductor to reinforce the luminescence of oel

    為使類陰極射線發光同有機電致發光集成，我們設計了非對稱結構al sioz mnppvn ， mn ppv中的發光是由於從sioz出來的電子和從ld注人的空穴的復合，而由於sioz中的電子的倍增過程，從sioz層出來的電子能量不是單一的，而有一個從低能到高能的分佈。
  8. In addition, when the electron - cavity pairs migrates to the films surface, there is adequate water to react with these electron - cavity pairs in good time. this not only reduces the composition probability of the electron - cavity pairs but also produces a large number of highly active hydroxyls that enhances the photocatalytic ability

    紫外光照射下產生的電子-空穴對遷移到薄膜表面后，有足夠的水分子及時地與空穴發生反應，不但減少了電子-空穴的復合機率，而且產生大量的強活性羥基，使薄膜的光催化性增強。
  9. With the increase of the amount of al, the intensity of the pl peak at 510nm increases. with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co - function of al, si, and o. el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films, si - sio2 films, and al - sio2 films )

    用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發光現象，峰位都在510nm左右，其峰位不因薄膜樣品內所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發光主要來源於電子和空穴在510 、基質中的發光中心的輻射復合發光。
  10. Since the carrier mobility in organic materials is very low, no collision excitation is possible. the short wavelength peak is due to direct bombardment by electrons from sic > 2. we name this luminescence as cathodoluminescence - like ( cl - like ) emission or solid state cathode luminescence because the energized electrons are accelerated in solid instead of in vacuum

    這樣在有機層中的電子數是nl n計n汁n ，空穴數是p n （ n是類陰極射線激發出的電子，也是類陰極射線激發出的空穴兒這兩類載流子的復合將比單純有機發光的復合nip增加了（ n計n葉n ）叮（ l n計n葉n ） n 。
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