穿電 的英文怎麼說

中文拼音 [chuāndiàn]
穿電 英文
electrical tracking
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  1. However, high breakdown voltages necessarily need high-resistivity material.

    但是，高的擊穿電壓必然要求採用高阻材料來製作。
  2. Measuring methods of photocell - inverse breakdown voltage

    光電池測量方法反向擊穿電壓
  3. Insulating liquids - determination of the breakdown voltage at power frequency

    絕緣油擊穿電壓測定法
  4. Temperature coefficient of breakdown voltage

    擊穿電壓溫度系數
  5. Drain breakdown voltage

    漏擊穿電壓
  6. Insulating liquids - determination of the breakdown voltage at power frequency - test method

    絕緣液體.電源頻率擊穿電壓的測定
  7. It not only gains the physical contrastive datum mark, but also improves the blm stability. cyclic voltammetry is used to study the characteristic of blm attached to metal surface, as the forming of blm, the voltammetric characteristics of blm, the selection of ion and measurement of different ki concentration

    就以上提出的處理方法，採用循環伏安法詳細研究了金屬表面所覆blm的基本性質，如：膜形成液的配製、膜的形成、膜電阻、膜的伏安特性、膜的擊穿電壓、離子的識別性及對不同濃度的碘化鉀溶液的測試。
  8. Determination of electric strength at power frequence for capacitor paper

    電容器紙工頻擊穿電壓測定法
  9. This heating helps to break down weak spots in the dielectric that otherwise might pass through the electrode undetected, only to fail during a later spark or hipot test

    這熱量幫助擊穿電線絕緣較薄的地方?否則線材通過電極而沒有被檢測到?結果在以後的火花測試和高壓絕緣試驗將會失效。
  10. In order to improve process quality and increase probability, we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions. finally, dc - 500mhz midf switch is fabricated, in which some important conclusions and suggestions are introduced

    工藝研究的重點是改進工藝質量，提高成品率，為此我們通過調整工藝條件來優化歐姆接觸電阻和提高器件的擊穿電壓。
  11. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  12. Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction

    界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。
  13. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  14. So a conclusion can be got that the annealing in n2 raises the la2o2, stability. 3. the exact solution and wkb approximation are compared, the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current, but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure, while the exact algorithm can give a exact result

    比較了wkb和精確解法計算柵介質隧穿電流的方法，精確解法在解決單sio _ 2層和wkb準經典近似有相同的結果，但是wkb不適合計算la _ 2o _ 3 / sio _ 2雙層柵介層的隧穿電流，而精確解法能精確地計算雙層柵介質隧穿電流。
  15. Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination

    利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。
  16. Fluids for electrotechnical applications. methods for the determination of the lighting impulse breakdown - voltage of insulating liquids

    電工裝置用流體.絕緣液體光脈沖擊穿電壓的測定方法
  17. A series of multi - pulse experiments are performed at breakdown voltage up to 400kv, peak current up to 30ka with an interval of 5ms, which shows spark gap switch could be obtained good insulation recovery in several milliseconds under the condition of water dielectric pulse power modulator with low load

    在擊穿電壓400kv ，峰值電流30ka ，脈寬40ns的工作參數下，採用吹氣的辦法（氣流速度30m / s ） ，使氣體火花開關多脈沖運行間隔達到5ms ，實驗結果與理論估計相符。
  18. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
  19. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  20. Hot electron tunneling mechanism of current collapse in gan hfet

    溝道熱電子隧穿電流崩塌模型
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