立方氮化硼 的英文怎麼說

中文拼音 [lìfāngdànhuàpéng]
立方氮化硼 英文
cbn
  • 立 : 動1 （站） stand; remain in an erect position 2 （使豎立; 使物件的上端向上） erect; stand; set up...
  • 方 : Ⅰ名詞1 （方形; 方體） square 2 [數學] （乘方） involution; power 3 （方向） direction 4 （方面） ...
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 硼 : 名詞[化學] （非金屬元素） boron （b）
  • 立方 : 1. [數學] cube 2. [簡] （立方體） cube3. （立方米） cubic metre; stere
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  2. Our products are made of selected excellent diamond, of all kinds and sizes, ready to meet the different requirements from our customers. ourmain products are diamond, cubicborazin, emery wheel, needle files, grinding paste, alloy molds and soon

    本公司產品選用優質金剛石精製而成，品種多，規格齊，能滿足不同廠商的要求，主要產品有金剛石、立方氮化硼、砂輪、什錦銼、研磨膏、合金模具等。
  3. Review of the present research on brazed monolayer cbn wheels

    釬焊立方氮化硼砂輪的研究評述
  4. Types of synthetic diamond and cubic boron nitride

    人造金剛石和立方氮化硼品種
  5. On the ultrahard tool materials - diamond and cubic boron nitride

    金剛石與立方氮化硼
  6. Influence of powder pressed pyrophyllite and its roasting technology on cbn monocrystal synthesizing

    粉壓葉臘石及其焙燒工藝對合成立方氮化硼單晶的影響
  7. Abrasive products - diamond or cubic boron nitride grinding tools - form and dimensions

    超硬磨料製品金剛石或立方氮化硼磨具形狀和尺寸
  8. Superabrasive products - rotating grinding tools with diamond or cubic boron nitride - general survey, designation and multilingual nomenclature iso 6104 : 2005

    超磨料製品.帶金剛石或立方氮化硼的旋轉磨削工具.一
  9. Superabrasive products - rotating grinding tools with diamond or cubic boron nitride - general survey, designation and multilingual nomenclature

    高強度磨料製品.金剛石或立方氮化硼旋轉磨削工具.一般評述名稱和多種語言術語
  10. Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon

    用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。
  11. 2 studying of the properties of cbn thin films afm showed that cbn thin film delaminated from substrate obviously. basing xps, we calculate the nib ratio to be 0. 90 that is closing to unity, and the thickness of hbn layer on cbn layer that is about 0. 80 nm

    根據x射線光電子能譜，計算得到立方氮化硼薄膜中的n和b的原子數比為0 . 90 ，接近理想化學配比1 ；立方氮化硼薄膜頂層的六角氮化硼的厚度約為0 . 80nm 。
  12. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  13. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  14. For obtaining cbn thin films, it is necessary that substrate negative bias voltage is not lower than 90v and r. f power is not lower than 200w

    若要得到立方氮化硼薄膜，負偏壓不能低於90v ，功率不能低於200w 。
  15. Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn

    襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。
  16. In the growth of c - bn films, the bombardment of particles with high energy plays a vital role

    在立方氮化硼的形成過程中，高能粒子對薄膜的轟擊起著至關重要的作用。
  17. Wear mechanism of cubic boron nitride tool in cutting austenitic manganese steel

    聚晶立方氮化硼刀具切削高錳鋼的磨損機制
  18. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  19. In the end of the paper, we discussed the particular advantage of rf - pepld for deposition of c - bn thin films and the important meaning of the nanothermodynamic theory proposed by this paper

    文章最後提出了常溫下rf 『 pepld方法沉積立方氮化硼薄膜的獨特優勢並討論了本文提出的金剛石的納米成核熱力學理論的重要意義。
  20. Cbn120 bright black mono - crystal, regular shape, high toughness and good thermal stability. mainly used for metal, vitrified bond and electroplated tools, wheels. the tools have longer service life

    Cbn120亮黑色立方氮化硼單晶，等積形單晶體，晶體較完整，具有較高韌性和熱穩定性。主要用於電鍍、金屬、陶瓷結合劑磨具、砂輪、工具，使製品具有更長的使用壽命，適合磨削黑色金屬材料及合金。
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