等粒變晶狀 的英文怎麼說

中文拼音 [děnglìbiànjīngzhuàng]
等粒變晶狀 英文
homeoblastic
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  1. The globalization course was that the preformed texture recrystallized and became the granular equiaxed grain, when the temperature rose and the holding time prolonged, the granular grain melted at some area and at the liquid - solid interface the grain globalized at the role of the curvature overheated

    過程機制為：擠壓形變組織在加熱過程中首先發生再結晶長大變為顆粒狀等軸晶；隨溫度升高和保溫時間延長，等軸晶發生局部熔化，液固界面的曲率過熱使晶粒外形向球狀轉變。
  2. 3. at the same holding time, when the holding temperature changed, the number of the long equal - area - circle diameter grain increased, and the average of the equal - area - circle diameter lengthened, the average of the roundness heightened

    3 、相同保溫時間條件下，改變等溫溫度，等積圓直徑大的晶粒隨溫度的升高而增加，球狀化程度高的晶粒數增多，平均等積圓直徑和平均球化度同時增大。
  3. The microstructure of lamellae pearlite has evolved ultrafine cementite particles throughout the ferrite matrix uniformly after five passes. the ferrite matrix is homogeneous grains, average grain size is - 0. 3 m. 2

    變形五道次后，片層狀的珠光體組織演變成了超細的滲碳體顆粒均勻分佈於鐵素體基體的組織，鐵素體基體為均勻的等軸晶，平均晶粒大小為0 . 3 m 。
  4. The average of the equal - area - circle diameter was changed from long to short and then to long, to short at last, as a wave. the average of the roundness was changed from low to high and to low again, as para - curve

    平均等積圓直徑由大變小再變大再變小，呈波浪狀變化；而晶粒平均球化度則由小變大再變小，呈拋物線狀。
  5. Abstract : the crystal structures obtained by static solidification and vibration solidification were compared. it was showed that, in the case of vibration solidification, the orientation growth of the columnar crystal was not obvious, the equiaxial crystal appeared more early. the grains of both types of crystals were quite fine, hardness in the full section was relatively high, and the hardness distribution was uniform. in the former case, the solute segregation in dendritical austenite more severe, and there were lumps of distortion inclusion

    文摘:對球鐵金屬型靜凝固與振動凝固的結晶組織對比表明：後者柱狀晶方向性生長較弱，等軸晶出現較早，且兩者的晶粒均較細，全斷面硬度較高且分佈均勻；前者枝晶奧氏體內溶質偏析大，有畸變夾雜團塊。
  6. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  7. The results showed that the in - situ formed tibi particles which had a size of about 50nm, exhibited a homogenous dispersion in the copper matrix. moreover, the interface between the nanoscale particles and the copper matrix was clean, and there was no certain location relationship. due to their reinforcement, the tensile strength and hardness of the in - situ cu - tib _ 2 nanocomposite significantly improved

    通過光學顯微鏡、 tem 、 xrd等對cu - tib2原位復合材料進行了金相組織、微結構分析，原位復合材料的鑄態金相組織中彌散分佈著團簇狀的tib2顆粒；形變態金相組織中tib2顆粒呈纖維狀排列； tem觀察表明：在基體內存在著尺寸約為50nm 、彌散分佈的tib2顆粒，且tib2顆粒與基體之間界面清晰，但由於tib2結構與銅晶體結構的差別較大， tib2顆粒與基體之間無固定的位向關系；納米tib對銅基體有良好的增強作用。
  8. The formation of a new set of strain - free grains within a previously cold - worked material ; normally an annealing heat treatment is necessary

    在冷塑性變形材料的內部生成等軸狀新晶粒的過程叫再結晶，通常發生於再結晶退火熱處理過程中。
分享友人
分享到 Line

分享到臉書