等離子清洗 的英文怎麼說

中文拼音 [děnglíziqīngxǐ]
等離子清洗 英文
plasma cleaning
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 清 : Ⅰ形容詞1 （純凈） unmixed; clear 2 （寂靜） quiet 3 （清楚） distinct; clarified 4 （一點不留） w...
  • 洗 : 洗動詞1 （用水等去掉物體上的臟東西） wash; bathe 2 [宗教] （洗禮） baptize 3 （洗雪） redress; ri...
  • 離子 : [物理學] ion
  • 清洗 : 1. （洗干凈） wash; clean; rinse 2. （清除） purge; comb out; eliminate
  1. This product is the newest filming technique, the latest achievement of usa electronic magic, it utilizes decomposition principle of electronic material to form a positive negative ions film on the surface of car coating, which has high water repellency and makes the surface of coat has more than 95 % brightness of mirror surface, lt has preeminent performance on weathering resistance, ageing resistance, oxidation resistance static resistance and wear resistance, with the force of charged ions, this product can easy removes the dirt, water drop acid rain and grease on the surface of the film and perennially and effectively protect coat surface, lt is the fourth generation car beauty and protective product which replaces glaze sealing products

    本品屬于當今最新的鍍膜技術，屬美國電子工學魔法的最新成果，它利用電子物質的分解原理，在車漆表面生成持有高撥水性的正負離子覆膜，使漆面光亮度可達鏡面光澤的95 %以上，並具有超強的耐候性、抗老化、防氧化、防靜電、耐磨性極好的功能，它利用電離子的力量，可輕松彈去覆膜表面的污垢、水滴、酸雨、油脂等，平時只需清水沖洗，便可立即使之恢復離子效應，達到長期保護漆面的目的，是取代封釉的第四代汽車美容保護產品。
  2. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  3. Gas plasma etcher plasma reactor

    氣體等離子清洗機
  4. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  5. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  6. Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs

    射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能
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