等離子蝕刻 的英文怎麼說

中文拼音 [děnglízishíkè]
等離子蝕刻 英文
plasma etching
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  • 離子 : [物理學] ion
  • 蝕刻 : [電學] [冶金學] etch; etching
  1. Plasma cyro - etching of high aspect ratio silicon crystal structures

    等離子體低溫刻蝕單晶硅高深寬比結構
  2. Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave

    摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。
  3. Influence of process parameters on the etching rate in inductively coupled plasma etcher

    等離子體刻蝕中工藝參數對刻蝕速率影響的研究
  4. Magnetization magneto - microwave plasma etching system

    磁場微波型等離子體蝕刻系統
  5. When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained

    兩層不同折射率的sio _ 2薄膜制備好之後，經過光刻、等離子體刻蝕（ icp ）的工藝步驟之後，形成了波導結構，初步製作出了器件的圖形。
  6. Hardware and software design for the inductively coupled plasma etching machine " s system are also presented

    介紹了plc控制等離子體刻蝕機的硬體系統和軟體系統的設計。
  7. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  8. In the present works, a self - consistent model describing the dynamics of radio - frequency ( rf ) sheath was established. the effects of collisions on the rf sheath dynamics, distributions of ion energy and angle incident on the substrate and the etching profiles were investigated numerically

    本文建立了一套自洽的碰撞射頻等離子體鞘層理論模型，系統地研究了碰撞效應對等離子體鞘層的物理特性、離子入射到基板上的能量分佈和角度分佈以及刻蝕剖面的影響。
  9. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  10. Analyzing the treated yak hairs with sem, xps and et al, it showed under the same conditions, the effect of etching is enhanced with the increasing of power of wave, and the hydrophilicity and dyeing rate enhanced obviously

    通過sem 、 xps及吸附性能等的分析，結果表明，在相同參數的等離子體條件下，隨著產生等離子體的微波功率的增大，對氂牛毛纖維表面的刻蝕效果增強；經過等離子體處理過的氂牛毛纖維的親水性，上染率等都有明顯的提高，說明該方法是一條切實可行的路線。
  11. This paper discusses the surface etching of polyester thread through application of plasma and alkali deweighting to enhance the size adhesion to polyester thread and improve the abrasion - resistance of the sized polyester thread

    摘要探索了應用堿減量、低溫等離子體處理方法對滌綸股線表面進行刻蝕處理，以改善上漿前滌綸表面界面，增強漿液對滌綸股線的黏附性，提高上漿后滌綸股線的耐磨性的研究。
  12. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  13. The reactor is capable of working in the rie ( reactive ion etching ) mode and also in the plasma etching mode

    反應腔擁有在rie （反應離子刻蝕）模式和等離子刻蝕模式下工作的能力。
  14. In the plasma - etching mode the passivation layer that is formed on the surface is likely to be thicker than in the case of rie

    在等離子刻蝕模式下，表面形成了比使用rie情況下更厚的鈍化層。
  15. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  16. Inductively coupled plasma etching system

    感應耦合型等離子體蝕刻系統
  17. Barrel type plasma etching system

    圓筒型等離子體蝕刻系統
  18. Aramid filaments are treated by a low - temperature plasma with different treatment times. the surface of filaments is observed by sem and the results show that the filament surface is smooth before the treatment and becomes more rough if filaments are treated for 6 minutes. in addition, it is found that the filament peels after 9 minutes of plasma treatment

    本課題採用低溫等離子體對芳綸纖維進行表面處理后，用sem觀察纖維表面，發現未經等離子體處理的纖維表面比較光滑；等離子體處理6分鐘后，纖維表面變得粗糙，產生很多微小的刻蝕坑；等離子體處理9分鐘后，纖維表面受到的刻蝕程度明顯增加，並產生表面剝離現象。
  19. In a word, the two type of voa both have valuable applicability and potential market. the author have done numerous processing to work out new processing such as polymer coating and cure and triple - layer - metal film vaporing. other new processing, polymer ultra - violet ( uv ) cure and inductively - coupled plasma ( icp ) etching were studied

    作者經過反復的工藝實驗，確定了聚合物波導塗膜和固化、三層金屬電極蒸發和腐蝕等新工藝的參數，並得到了聚合物紫外固化、等離子體刻蝕等新工藝的初步數據。
  20. Finally, according to the technique of plasma etching, an evolution model describing the spatio - temporal profiles of the micro - trench is established. and that we simulated the effects of collisions and the source parameters on the etching profiles

    最後，針對等離子體刻蝕工藝，建立了微結構區剖面的時空演化模型，並模擬了碰撞效應和電源參數對刻蝕剖面演化的影響。
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