結晶外貌 的英文怎麼說

中文拼音 [jiējīngwàimào]
結晶外貌 英文
apperance of crystal
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  • 貌 : 名詞1. （相貌） looks; appearance; face 2. （外表的形象; 樣子） appearance; manner; aspect 3. （姓氏） a surname
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  2. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  3. All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate

    本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜，採用原子力顯微鏡（ afm ） 、 x射線（ xrd ） 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段，研究了樣品的表面形貌、晶體結構、光學和電學性能等。
  4. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  5. The recent developments in normal spinel limn2o4 were reviewed, in the process of the solid state synthesis, we researched the effect of materials and synthesis temperature on crystal structure and electrochemical performance, which were characterized by dta - tg, sem, xrd as well as electrochemical performance testing. the structure, electrochemical performance and the correlations between them were all discussed in detail for these doped samples

    本文在綜述國內外鋰離子電池尖晶石型材料limn _ 2o _ 4研究進展的基礎上，結合dta - tg 、 sem 、 xrd和電化學性能測試等手段，系統研究了固相法制備鋰離子電池正極材料摻鈷錳酸鋰合成原料、合成溫度對所得材料外觀形貌、晶體結構和電化學性能的影響。
  6. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。
  7. The alloy structure has been shown by x - ray powder diffraction. x - ray photoelectron spectroscopic data have confirmed that the nickel and cobalt in the bimetallic nanoclusters is in the zero - valence state and alloy state, respectively

    利用差熱分析、紅外光譜、 x射線粉末衍射和透射電子顯微鏡對反應的氧化過程、結晶過程和產物的結構與形貌進行了表徵。
  8. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  9. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
  10. The morphology, chemical compositions, crystal structures and some properties of these obtained nanowires were systemically characterized. < wp = 6 > because of their novel properties and unique structures, one - dimensional nanostructrue semiconductor materials have generated a tremendous amount of interests in fundamental and potential promising applications in electronic and photoelectronic devices. we fabricated cdse, te and cdte nanowires by direct current ( dc ) electrodeposition in porous anodic aluminum oxide ( aao ) templates

    本論文採用電化學模板合成法制備出了幾種新型的納米線，並對它們的形貌、組成、晶體結構及其他一些性質進行了表徵；發展了一種用紫外可見光分光光度法分析電沉積在導電玻璃上的ni - fe合金鍍層的方法；用模板脈沖電沉積法制備了fe20ni80 / ag多層納米線，並對它的形貌進行了初步表徵。
  11. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
  12. Moreover, the falling rate of its microhardness is minished. molybdenum wire doped with la2o3 is better at enhancing mechanic properties and microstructure than molybdenum wire doped with y2o3. furthermore, la2o3 particles are easier to diffuse to the grains boundary than y2o3 particles under high temperature

    此外，本實驗還發現，摻雜la2o3比摻雜y2o3更有利於提高鉬絲高溫下的力學性能，改善鉬的燒結態形貌，降低其孔隙率，減小其晶粒尺寸，且la2o3顆粒比y2o3的顆粒更容易在高溫下擴散到晶界上去。
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