線狀剝蝕 的英文怎麼說
中文拼音 [xiànzhuàngbōshí]
線狀剝蝕
英文
linear denudation-
The study results can be summerized as following aspects : ( 1 ) the basic settling curve of this basin was broken - line shape of seven sections in which upper jurassic, lower cretaceous, eocene, oligocene and neogene corresponded with the decline ones representing five episodic clear subsidences of this basin, late cretaceous to paleocene and early miocene corresponded with the rising ones reflecting the uplift and denudation of this basin. ( 2 ) the subsidence of this basin migrated from the east to the west, from mesozoic to cenozoic
研究表明： （ 1 ）北黃海盆地的基本沉降曲線型式為7段折線狀，其中晚侏羅世、早白堊世、始新世、漸新世、新近紀為曲線下降段，代表盆地5幕較明顯的沉降；晚白堊世古新世以及中新世早期為曲線上升段，反映盆地的抬升剝蝕。According to whether there are later tectonic activities or not it can be divided into mountain planation surface, lower planation surface and buried planation surface. according to active condition, it can be divided into active surface, dormant surface, exotic surface and defunct surface. taking the base level into consideration, it can be divided into sea - eroded and deposited planation surface, denudated planation surface, snowline planation surface and upper eroded planation surface
依據夷平面形成后是否遭到後期構造變動將夷平面分為山地夷平面、原地夷平面和埋藏夷平面；依據夷平面的活動狀態可分為活動面、休眠面、外來面和廢止面；依據侵蝕基準面可分為海蝕-堆積夷平面、剝蝕夷平面、雪線夷平面和上部剝蝕夷平面；依據基底可分為穩定地帶上的夷平面和活動地帶上的夷平面；依據氣候帶可分為準平原、山麓面和聯合山麓面、雙層水平面和刻蝕平原、凍融山足面和凍融剝夷平原。By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
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