耗盡型晶體管 的英文怎麼說

中文拼音 [hàojìnxíngjīngguǎn]
耗盡型晶體管 英文
depletion mode
  • : Ⅰ動1 (減損; 消耗) consume; cost 2 [方言] (拖延) waste time; dawdle Ⅱ名詞1 (壞的音信或消息) ...
  • : 盡Ⅰ副詞1 (盡量) to the greatest extent 2 (用在表示方位的詞前面 跟「最」相同) at the furthest ...
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • : Ⅰ名詞1 (管子) pipe; tube 2 (吹奏的樂器) wind musical instrument 3 (形狀似管的電器件) valve;...
  • 耗盡 : exhaust; use up; deplete; exhaustion; depletion; consumption; burning up; impoverishment
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導分立器件. cs146硅n溝道場效應.詳細規范
  2. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導分立器件. cs141硅n溝道mos場效應詳細規范
  3. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導分立器件. cs140硅n溝道mos場效應.詳細規范
  4. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導分立器件. cs5114 cs5116硅p溝道場效應詳細規范
  5. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導分立器件. cs4091 cs4093硅n溝道場效應詳細規范
  6. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導分立器件. cs4856 cs4861硅n溝道場效應詳細規范
  7. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導分立器件gp gt和gct級cs1硅n溝道場效應.詳細規范
  8. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導分立器件gp gt和gct級cs4硅n溝道場效應.詳細規范
  9. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導分立器件gp gt和gct級cs10硅n溝道場效應.詳細規范
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