脈狀沉積 的英文怎麼說

中文拼音 [màizhuàngchénjī]
脈狀沉積 英文
dyke deposit
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. There are typical laminated structure, soft sedimentary - slipping deformed structure, syngenetic brecciated structure in the ore which are the mirror of syngenetic sedimentation. the other type of ore has the charactristic of epigenetic mineralization, which is called as telescoped ore. the ore occurs in vein, pocket, lensoid and bedd

    礦石中發育典型的紋層狀構造、軟沉積滑動變形構造、同生角礫構造等反映同生沉積特徵的礦石構造；另一類礦石具有明顯的後生成礦特點，稱之為疊生改造型礦石，礦石產于脈狀、囊狀、透鏡狀及似層狀礦體中，與燕山期巖漿巖及斷裂裂隙構造關系密切。
  2. The dark - gray traction current deposits belong to internal - tide deposits, it develops sandstones and siltsands, and charactered with lenticular, wave, flaser bedding, bimodal cross - bedding and ripple mark

    深水牽引流沉積為內潮汐沉積類型，巖性為細砂巖、粉砂巖，以發育透鏡狀、波狀、脈狀層理、雙向交錯層理、波痕等沉積構造為特徵。
  3. Excimer laser plasma switch controlling laser pulse duration

    脈沖激光沉積法制備無機發光薄膜的研究現狀
  4. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  5. The sto, ybco and sto / ybco thin films were deposited on laalo3 ( 001 ) ( lao ) substrate by pulsed laser deposition ( pld ). the effects of deposition parameters, such as the substrate temperature, the of target - substrate distance, laser energy density, on the properties of the thin fillms were systematically studied. the surface morphology of the thin films was investigated by atomic force microscopy ( afm ) and scanning electron microscopy ( sem )

    採用脈沖激光沉積技術在laalo3 （ 001 ） （ lao ）基片上生長ybco 、 sto以及sto / ybco集成薄膜，系統研究了基片溫度、基片表面狀態、氧分壓、激光能量密度、脈沖重復頻率等工藝參數對薄膜表面性能、結晶情況的影響，優化了ybco 、 sto薄膜生長的工藝參數，運用afm 、 sem 、 xrd等分析手段表徵薄膜的微觀性能，分析結果表明：薄膜表面平整、結晶良好、 c軸織構。
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