膜成核 的英文怎麼說

中文拼音 [móchénghé]
膜成核 英文
film nucleation
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 核 : 核構詞成分。
  1. In order to improve the adherence of the film to the substrate and the repeatability of synthesis, we invent a three - step approach, which comprised the steps of turbostratic boron nitride ( tbn ) turning into rhombohedral boron nitride ( rbn ) as the first, rbn turning into cbn as the second and deposition as the last

    基於對bn薄膜相結構的分析和優化的沉積條件，制備出立方相含量高達95 %的cbn薄膜。為了改善制備的可重復性和粘附性，提出了三步沉積方法，即將成核過程分成tbn轉化為rbn和rbn轉化成cbn的兩步，加上之後的沉積過程。
  2. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  3. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  4. Many glycoproteins of lower and higher eucaryotes are attached to the plasma membrane by means of a glycosylphosphatidylinositol ( gpi ). gpi - anchored proteins are synthesized on membrane - bound ribosomes. upon translocation of the pro - protein across the endoplasmic reticulum membrane, gpi : protein transamidase ( gp1t ) recognize and removes the carboxy terminal gpi signal sequence and attaches a gpi molecule to the newly exposed carboxy terminal amino acid

    Gpi化前體蛋白在依附於膜的核糖體上合成，當其易位穿過內質網（ er ）膜后，被gpi ：蛋白質轉酰胺基酶（ gpit ）識別， gpit在移走其羧基端gpi信號序列的同時將gpi分子連接至新生成的氨基酸位點上。
  5. By compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated

    當處于氣液界面的類脂類化合物的單分子膜被壓縮時，隨著分子間距的縮小，單分子膜將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成核和生長過程.由於單分子膜的二維特性，該系統中的實驗觀測對于檢驗和發展二維界面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作，在單分子膜系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子膜系統中的成核、界面穩定性、枝晶生長、形態演變等的觀測和分析
  6. Abstract : by compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated

    文摘:當處于氣液界面的類脂類化合物的單分子膜被壓縮時，隨著分子間距的縮小，單分子膜將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成核和生長過程.由於單分子膜的二維特性，該系統中的實驗觀測對于檢驗和發展二維界面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作，在單分子膜系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子膜系統中的成核、界面穩定性、枝晶生長、形態演變等的觀測和分析
  7. ( 2 ) the distribution, flux and flowrate of the gases are exactly under control. in order to grow high - quality diamond film on si substrate, the quality of diamond film on a mirror - polished single - crystal si surface is examined experimentally, and the enhancement mechanisms of positive or negative bias on nuclear formation is interpreted theoretically

    為了在si襯底上生長高質量的金剛石薄膜，對在鏡面拋光si表面上的成核進行了深入的實驗研究，對襯底偏壓（正、負）的增強成核作用給出了自己的解釋。
  8. Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed

    採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。
  9. In the end of the paper, we discussed the particular advantage of rf - pepld for deposition of c - bn thin films and the important meaning of the nanothermodynamic theory proposed by this paper

    文章最後提出了常溫下rf 『 pepld方法沉積立方氮化硼薄膜的獨特優勢並討論了本文提出的金剛石的納米成核熱力學理論的重要意義。
  10. The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film

    晶格失配對異質外延超薄膜生長中成核特性的影響
  11. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  12. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  13. The results indicate that phosphate film forms at first at the boundaries between ferrite and graphite

    結果表明，磷化膜晶核首先在鐵素體石墨界面等處形成，是一個不均勻形核過程。
  14. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  15. The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol. the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt. the films which were calcined at 500 ? had formed perovskite and large crystal content, means that perovskite formed at the lower temperature, in conclusion, the crystalline ability of pt was improved by the doption of tb and mcnt

    納米碳管的引入，使得體系在納米碳管和pt之間的界面產生非均態核化，隨pt薄膜成核勢壘的降低，摻納米碳管的pt薄膜在較低溫度下即可形成鈣鈦礦相，在500的較低溫度，就可獲得結晶完整且己具有很大結晶量的薄膜。
  16. The common method used by domestic and foreign scientists is removing the cobalt from the surface of the substrate by etching substrate using thin acid solution at room temperature. but the internal co will still overflow during mpcvd

    為降低成核及成膜過程中鈷的副作用，國內外通常採用的方法是將硬質合金基體在室溫下用稀酸溶液浸泡一定時間，從而除去基體表面的鈷。
  17. Blend in molten state make hdpe crystals small, crystallinity large, quantity of cb particle benefit to conductivity decreasing ; in solid state cb aggregate is sheltered with a insulate hdpe film, also cb structure will be broken down during blend ; all of these will make conductivity bad. but processing alds can lower this effect obviously. 3. the effect of crosslink is restricting the movement of molten polymer molecules

    為此筆者認為固相混合使hdpe晶粒尺寸變小，結晶度增大，使得異相成核的晶粒增多，參與導電的炭黑粒子數量減少：熔混卻使炭黑粒子表面被覆一層絕緣膜：這都將導致材料的導電性明顯變差，同時兩種混合還會造成炭黑結構的破壞，皆使得材料的導電性明顯變差。
  18. In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately

    本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。
  19. The important application of diamond film is using the windows materials coat. because the glass is easy to be stain, it is very disadvantage to grow high quality diamond film. influence the diamond film application, and like commonly, rubbing the quartz glass can not improve the nucleus density, so it is very hard to grow high quality diamond film, and the quartz glass contain too much oxygen, it is very disadvantage to diamond growth

    金剛石薄膜的一個重要的應用就是作為窗口材料塗層，但是由於玻璃易於被污染，對于生長高質量的金剛石薄膜是不利的，影響了其應用，而且由於一般的研磨襯底方法對于石英玻璃的成核方法影響不大，更難以生長出高質量的金剛石薄膜，而且由於玻璃中含有較多量的氧元素，對于金剛石薄膜的生長是不利的，因此對于金剛石薄膜在一些領域中限制了其應用潛力。
  20. The experiments show that the condition window for cubic boron nitride ( cbn ) formation is very narrow. so the formation of cubic boron nitride film is very difficult

    實驗表明，立方氮化硼薄膜成核和生長的條件窗口很窄，因此立方氮化硼薄膜難以合成。
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