膜長度常數 的英文怎麼說
中文拼音 [mózhǎngdùchángshǔ]
膜長度常數
英文
membrane length constant-
The results indicate that ( a ) before heat treatment, with the increasing of substrate temperatures, content of lower valency ( tij + ) decreases, the stoichiometric proportion of o / ti in all samples is about 2 ; the films have amorphous incompact columnar fiber structure, and with the increasing of substrate temperature, the size of columnar fiber increases ; the films have good hyalescence in visible range and great absorbability at the wavelength of 350nm ; optical constants of the films are calculated from the transmittance spectrums in visible range by mathematical analysis of the orders of interference, the results show that the refractive ind
研究結果表明， （ a ）熱處理前，隨著基片溫度的增加，薄膜中的低價氧化鈦含量逐漸減少，化學計量比趨于o ti = 2 ；薄膜具有非晶態不緻密的柱狀纖維結構，柱狀纖維的尺寸隨基片溫度的升高而增加;薄膜在可見光范圍內透明，在波長為35onzn時嚴重吸收，利用干涉級次法分析了薄膜的光學常數，結果表明，薄膜的折射率隨基片溫度的升高而增加，根據計算結果得到了tioz薄膜在不同基片溫度下的折射率色散曲線。Finite difference time - domain method is used to calculate the reflection for these probes and absorbing boundary condition is used to deal with the singularity in the axis of the coaxial - line in the simulation. by comparing the reflection of different probes, the best probe has been selected according to sensitive requirement. the influence of parameters : such as thickness of protective film, length of protruding inner conductor of the coaxial - line probe to the measurement has been studied
通過時域有限差分法進行數值模擬分析，並採用吸收邊界處理同軸線軸心奇異點，計算出各種探頭測量相同溶液的反射系數，根據其測量的靈敏度，選出最優設計；並通過分析所選探頭的各種設計參數，如薄膜厚度、內導體伸出長度等的變化對測量結果的影響，找出該探頭各參數的最佳范圍，使其具有高度靈敏性，以適用於測量化學反應溶液的介電常數。In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。The ba0. 5sr0. 5tio3 / pt / ti / sio2 / si multilayered heterostructures were successfully prepared. the dielectric properties measurement results show that the dielectric tunability is superior and the relative dielectric constant er varies at a little degree with the frequency, but er is lower for the low - temperature deposited bst thin films, compared with the bst thin films prepared at higher temperature. 6
Bao . ssr05毛o3薄膜的介電性育瀕四試結果表明鍘氏生長溫度制備的bst薄膜的介電可調諧性能較好，薄膜的介電常數份隨著頻率的變化較小;較高溫度制備的bst薄膜的介電常數較高，但薄膜的介電可調諧勝能更差，而且薄膜的介電常數場隨頻率的變化較大。Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。The parameters such as effective magnetization, gyromagnetic ratio, g value and various anisotropy constant were determined by theoretical fitting
並計算出了薄膜各生長階段的有效磁化強度，迴旋磁比及各向異性常數。分享友人