薄沉降膜 的英文怎麼說

中文拼音 [bóchénjiàngmó]
薄沉降膜 英文
thin falling film
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 降 : 降動詞1. （投降） surrender; capitulate 2. （降伏） subdue; vanquish; tame
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  1. The photocatalytic activity of the samples was evaluated by the photocatalytic oxidation of nitrogen monoxide in the gaseous phase and the photocatalytic decolorization of methyl orange solution in the aqueous phase, respectively. the titania thin films on fused quartz were prepared by lpd method and then calcined at different temperatures

    用液相沉積法在石英玻璃上制備了二氧化鈦薄膜，並在不同的溫度下進行熱處理，用甲基橙水溶液的降解脫色評價二氧化鈦薄膜的光催化活性。
  2. High deposit temperature leads to transmission falling of the unannealed films. but the average transmission of sample deposited at 500 is higher than that at 450

    未經退火的薄膜透過率隨沉積溫度升高而呈現下降的趨勢，但500樣品比450的平均透過率高。
  3. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。
  4. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質，而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高，在氫等離子體環境中具有很高的化學穩定性，不易導致太陽能電池材料活性降低。
  5. By film thickness measured, fourier transformed infrared spectrometer ( ftir ) analysis, x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement, the effect of microwave input powers on deposition rates, f / c ratios, bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed

    由於微波功率的改變會導致等離子體中電子溫度和等離子體密度發生變化，從而造成不同的源氣體分解過程，結果微波功率的升高導致了薄膜沉積速率的提高、 f / c比的降低，同時也導致薄膜中cf和cf _ 3基團密度的降低，而保持cf _ 2基團密度接近常數。
  6. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  7. It is found that the microstructure and properties of as - deposited dlc films is seriously dependent on the substrate temperature used in deposition processes. with the increase of substrate temperature, sp 3c content in the deposited dlc film decreases, surface roughness and friction coefficient of deposited dlc films increase. at the same time, microhardness, residual stress and optical band gap became lower

    研究發現，基片溫度對dlc薄膜的結構和性能影響最明顯，隨著薄膜沉積過程中基片溫度的增加， dlc薄膜中的sp ~ 3c含量減少， dlc薄膜的表面粗糙度增加， dlc薄膜的顯微硬度降低， dlc薄膜的摩擦系數增大， dlc薄膜的殘余應力都是減小的，光學帶隙eg變窄。
  8. Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing

    經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。
  9. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  10. In the present work, we have prepared titania thin films on different substrates from a ( nh4 ) 2tif6 aqueous solution upon addition of boric acid by liquid phase deposition ( lpd ) method under the ambient temperature

    在本研究工作中，以六氟鈦酸銨和硼酸為原料，用液相沉積法（ lpd ）在不同的基片上制備二氧化鈦薄膜，並用液相甲基橙水溶液的降解脫色和氣相no的光解去除率評價二氧化鈦薄膜的光催化活性。
  11. In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately

    本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。
  12. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  13. And the transition layer ti between tio2 and tin can improve the transmittance of tio2 / tin. in triple layers the exterior tio2 can increase the transmittance of tio2 / tin / tio2, so do the transition layer ti film between tio2 and tin. after treated at 300 c tio2 / tin / tio2 has no difference with non - heat - treated triple layers, and when treated at 400 c the transmittance of the films increase and the curve shift to the red

    結果顯示，在tio _ 2 tin多層膜中， tin濺射沉積時間較短時，薄膜在紫外?可見光范圍內呈現出較高的透過率；隨著tin薄膜濺射時間的增長，透過率武漢理工大學碩士學位論文逐漸降低;在tio :與tin之間鍍制一層ti膜過渡層可以提高雙層薄膜ti02ztin的可見光透過率。
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