薄膜取向 的英文怎麼說
中文拼音 [bómóqǔxiàng]
薄膜取向
英文
film orientation-
2 we studied the films with raman polarization spectrum. the peak intensity in the polarization spectrum of the films with basal plane not oriented on the substrate changes with the polarization condition
張生僅北京工業大學博士學位論文摘要2利用raman偏振光譜研究了薄膜的性質，對基面非平行襯底的取向， raman譜隨偏振條件的不同而變化。C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate
C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。The cdte films doped te are deposited onto glass substrate by close spaced sublimation. the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction. the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method
X射線衍射分析表明，純cdte薄膜是立方閃鋅礦結構， （ 111 ）晶面取向生長； hall效應實驗測量發現薄膜電阻很高，呈p型電導，面電阻率數量級達1010It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic
結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。Standard specification for oriented polypropylene film
取向聚丙烯薄膜標準規范By adjusting parameters, the films with ( 111 ) preferential growth have been successfully obtained at a low temperature
通過控制參數，在較低的襯底溫度下成功獲得出（ 111 ）擇優取向的納米薄膜。The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %
為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film
退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。The properties of thin films have been investigated with modern analysis technique, such as afm ( atom force microscopy ), sem ( scanning electron microscope ), xrd ( x - ray diffraction ) and rocking curve ( - scan ). and the properties of ybco thin film and its substrate and deposition temperature have been analysed, comparing with lao substrate ' s crystallization quality, ybco thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of lao substrate as revealed by xrd
本文結合afm 、 sem研究ybco薄膜的表面形貌， xrd 、 fwhm分析薄膜的結晶情況，並結合成膜溫度和基片的質量進行一系列結構與性能的對比研究，發現laalo3 （ lao ）基片的質量對ybco薄膜的結構完整性有很大影響，不僅影響了薄膜的c軸取向性，而且影響了ybco的超導性能。All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate
本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜，採用原子力顯微鏡（ afm ） 、 x射線（ xrd ） 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段，研究了樣品的表面形貌、晶體結構、光學和電學性能等。We discussed the effects of several variables in the experiment on the orientation of the films. the orientation mechanism of the bn films was also probed
1首次對hbn薄膜的取向生長進行了系統的研究，討論了幾種實驗參數對取向的影響，探討了薄膜取向生長機制。The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique
=本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。Growth rates of between 0. 25 and 1. 3μm/min were reported with the c axis of hexagonal zno grown on(0112)-oriented al2o3 lying in the plane of the film。
據報道，在（0112）取向的Al2O3襯底上生長C軸位於薄膜平面上的六角晶體ZnO的情形中，其生長速率在025mmin和13mmin之間。Synthesis and characterization of a novel photoalignment liquid crystalline polymer
含液晶基元的光控取向薄膜新型材料的制備及初步表徵We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。B ) the deposition time may influence the films orientation and growth rate
B ）沉積時間會影響薄膜的取向和生長速率。Biaxially oriented polypropylene films for capacitors
電容器用雙軸向取向的聚丙烯薄膜Bi - oriented polypropylene films
雙取向聚丙烯薄膜R amp; d of preferred oriented ferroelectric thin film prepared by sol - gel method
凝膠法制備晶粒擇優取向鐵電薄膜的研究With the xrd spectrum, it shows the aln thin films have orientation growth with ( 100 ) and ( 110 )
X射線衍射結果表明氮化鋁薄膜具有（ 100 ）和（ 110 ）面擇優取向。分享友人