薄膜壓力表 的英文怎麼說

中文拼音 [bómóyālìbiǎo]
薄膜壓力表 英文
membrane pressure gauge
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 壓 : 壓構詞成分。
  • 力 : Ⅰ名1 （力量; 能力） power; strength; ability; capacity 2 [物理學] （改變物體運動狀態的作用） forc...
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 薄膜 : thin film; film; diaphragm
  1. Series of guowei dry - method composite machines as new product are explored with our many years ' experience, the requirement of the users. the first metal of this machine is adopted with : photo - ecectricity auto. tracking " correcting deviation equipment, magnetic powder tension control. pneumatic back pressure shifting blade, oven temperature controlled qutomatically, big roll with oil heating, coating composite pneumatic control as well as double frequency governor etc. it will make the machine with fast speed, lower voice, low polluted by air, shout consumptionfor energy, stable working etc. especially suitable for al - foil with smooth surface and no enough firming, glass paper, polyester ect. the composite material with hard strength, fireproof, anti - ventilation, anti - fatty, frozen, dudrable steam etc character. it is widely used in food, pharmacy, as well as daily articles to package

    「國偉」 、系列乾式復合機，是我廠根據多年的復合機製造經驗及結合客戶需求，開發的新產品，該機第一基材採用了「光電自動跟蹤」糾偏放卷裝置，磁粉張力控制、氣動背壓移動式刮刀、烘箱溫度分段自動控制、大輥筒導熱油加熱、上膠復合氣動控制及雙變頻調速技術，使該機具有復合速度快、噪聲低、空氣污染小、能耗低、運行平穩等特點，適宜於表面光滑的鋁箔玻璃紙聚酰胺等與聚乙烯、聚丙烯等薄膜的復合，復合薄膜具有強度高、防水、防透氣、防油脂、可冷凍、蒸煮等優點，廣泛應用冷凍食品、乾燥食品、醫藥品及日用品的包裝。
  2. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  3. The cmr materials have complex physical properties. some phenomena of the lacamno3 films are discussed, such as the effects of mismatch between the substrates and the films, the variation of the resistance of films under different bias currents. and the effects and improvements are discussed with details after the films are annealed in high temperature and high oxygen pressure

    超巨磁電阻材料有著復雜的物理性質，我們對lacamno _ 3薄膜材料所表現出來的一些現象進行了討論，如應力變化對薄膜性質的影響、不同偏置電流與薄膜電阻變化的關系等，還特別討論了薄膜在高溫、高氧壓環境中退火所帶來的影響以及薄膜性質的改善。
  4. In the process of sputtering, it is important to characterize the thickness and residual stress of plct films. in experiment. through the technology of x - ray

    基於掠入射x射線衍射（ gixrd ）的殘余應力測量表明，射頻磁控濺射plct薄膜中為壓應力。
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  6. We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on

    產品有溫度變送器（一體化溫度變送器模塊（雙支溫變模塊） 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器） 、壓力變送器（擴散硅壓力變送器、藍寶石壓力變送器、濺射式（金屬薄膜）壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器） 、液位變送器模塊（專為液位計廠配套） 、配電器（單迴路、雙迴路） 、信號隔離器（單迴路、雙迴路） 、傳感器（溫度、壓力） 、配變送器的顯示表頭（ 100刻度顯示、 lcd液晶顯示、 led數碼顯示） 、數字儀表等工業自動化儀器儀表。
  7. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  8. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  9. The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage, frequency, gas flux influenced sp3 bond ratio of dlcs, the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage, reducing frequency, appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic, the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs, but it caused the surface morphology to become asperity

    研究結果表明： （ 1 ）用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發現用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能（例如硬度）影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。
  10. Bourdon springs, diaphragms, capsule springs and magnetic pistons are used as the mechanical pressure sensing element ; electronic pressure gauges and switches are based on thin - film technique, ceramic - or piezoresistive semiconductor sensors

    機械壓力傳感器元件有波登彈簧，橫膈膜，圓柱體彈簧和磁感活塞。電子壓力儀表和開關則是基於薄膜技術，陶瓷或壓阻半導體傳感器。
  11. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  12. It was found that large scale single crystal ttf m - nbp film can be obtained by this method. atomic resolution surface images were observed both with atomic force microscope and scanning tunneling microscope. high density data storage was realized by applying voltage pulses between the stm tip and the substrate

    用原子力顯微鏡afm和掃描隧道顯微鏡stm都觀察到了ttf m - nbp薄膜表面的原子級分辨像。通過stm針尖施加脈沖電壓在ttf m - nbp薄膜上實現了納米級的信息存儲，最小記錄點直徑約為1 . 2nm 。
  13. In fundamental theory, adaptive optics, electrostatic actuation, flexure beam theory and squeeze film damping are researched ; in fabrication, bulk micro fabrication process and surface micro fabrication process are researched and compared, then the structure parameters and layout of a 8 x 8 micromirror array are designed using summit foundry ; in analysis, analytical and numerical method are used to perform static analysis, modal analysis, transient analysis, frequency analysis and to characterize the farfield performance of this 8x8 micromirror array. finally, in order to realize large scale micromirror array with lower snap down voltage, advices are given for further research

    在基本理論方面，通過對自適應光學，靜電力驅動，彈性梁理論和擠壓薄膜阻尼的研究，確定了微變形鏡的配置方案；在加工方面對體加工工藝， mumps工藝和summit工藝進行了研究與比較，並選用殘余應力小，表面質量好的summit工藝對8 8的微變形鏡陣列原型進行了結構設計與版圖設計；在分析方面主要對微變形鏡單元的靜態特性，模態特性，瞬態響應，頻率響應和8 8規模的微變形鏡陣列的遠場光學模型進行了研究，確定了微變形鏡的性能參數。
  14. Abstract : after the relationship between radial and tangential strains and resistance changes of strain gage on the surface of elasticity pressure sensor is established by finite element method, the output voltage is related to the resistance changes in the electrical bridge, and the nonlinear precision of this kind of pressure sensor is analyzed

    文摘:本文用有限元方法分析平膜片式壓力傳感器彈性元件表面徑向應變及切向應變與薄膜應變片阻值變化的聯系后，根據電橋原理得到與其輸出電壓之間的關系，最終並分析了傳感器之非線性精度
  15. When the membrane deforms parabolid, the geometry and equilibrium equation are educed in the condition of large displacement, large rotation and small strain. that is to say, the expression of strain should include quadratic term of displacement and equilibrium equation should be established after the structure had deformed

    對于大位移、大轉角和小應變條件下的薄膜結構，在壓力作用下變形到拋物面時，推導出其幾何方程和平衡方程，即應變表達式應包括位移的二次項，平衡條件應建立在變形后的位形上。
  16. The natures of the probe and formation mechanisms in these techniques are different ; therefore, the images of spm can reflect different properties of sample surface. in this work, related properties of ferroelectric thin film were investigated as followed : the main factors determining the image formation of piezoresponse force microscopy ( pfm ) and scanning nonlinear dielectric microscopy ( sndm ) were studied. to avoid the misreading of the same conductive tip with different state, a new method of polarization distribution mapping with nonconductive tip was proposed, and the result of experiment demonstrated that the polarization distribution of ferroelectric thin films could be characterized well by the new approach

    本工作主要分為以下幾個部分:從研究鐵電薄膜的壓電響應力顯微鏡（ pfm ）和掃描非線性介電顯微鏡（ sndm ）成像的影響因素入手，討論了針尖對成像質量的影響;為降低實驗成本、減小導電探針針尖狀態變化對鐵電薄膜微區電性能測試的負面影響，提出了以非導電探針檢測微區極性分佈的方法，並在現有spa - 300hv型spm的實驗平臺上以pfm模式成功實現了新方法對鐵電薄膜極性分佈的表徵。
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