薄膜樣品 的英文怎麼說

中文拼音 [bómóyàngpǐn]
薄膜樣品 英文
film sample
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 樣 : Ⅰ名詞1. （形狀） appearance; shape 2. （樣品） sample; model; pattern Ⅱ量詞（表示事物的種類） kind; type
  • 品 : Ⅰ名詞1 （物品） article; product 2 （等級; 品級） grade; class; rank 3 （品質） character; qualit...
  • 薄膜 : thin film; film; diaphragm
  • 樣品 : sample; specimen; prototype; exponent
  1. The phenomenon of interference is presented when the x - ray beam hits the thin layer sample at glancing angle, the angles corresponding maximal and minimal intensity of x - ray fluorescence are described when the phenomenon of double - beam interference or multiple - beam interference is occurred

    介紹了掠射x射線與薄膜樣品作用時產生的干涉現象，給出了x射線雙光束干涉和多光束干涉產生極值的條件。
  2. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。
  3. Sem results imply that the surface of thin films deposited by chemical bath method is correlate to the reaction conditions. surface of sns thin films deposited by chemical bath method are coarse than thin films deposited by chemical bath with ultrasonication method and successive ionic layer adsorption and reaction method

    Sem結果顯示用常規化學浴方法所制備的薄膜樣品的表面形貌與反應條件有關，而用超聲波輔助化學浴和連續離子反應法制備的薄膜樣品的表面較之常規化學浴方法所得到的薄膜樣品表面晶粒細小均勻，緻密平整。
  4. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  5. In the theoretical description of grazing emission fluorescence, the mode of fluorescence intensity emitted from layered materials dependence of grazing angle is established by applying asymptotic approximations to double fourier integrals, and the theoretic calculation formula of fluorescence intensity from a thin layer is derived. by the derived expressions, the theoretic simulation curves of several thin layers on si substrate are calculated. in the experimental setup, the requirement of construction of the setup and some important parameters are brought forward

    最後，利用平穩位相方法建立了掠出射情況下薄層樣品產生的熒光強度和掠出射角的對應關系數學模型，推導了薄層樣品熒光強度理論計算公式，並以此為依據模擬計算得出了cr 、 fe 、 ti和ni等幾種以si作基底的單層薄膜樣品的熒光強度隨掠出射角變化的理論曲線。
  6. In this dissertation, a special shape cylindrical target of ybco is designed and sintered for the inverted cylindrical dc sputtering ( icds ) device. then, the thickness distribution of the 3 inch size thin films has been simulated

    本文針對3英寸ybco高溫超導雙面薄膜的制備技術，研究了靶材燒制、薄膜膜厚分佈、加熱器設計與製作，制備出了具有87k超導性的3英寸ybco雙面薄膜樣品。
  7. This demonstrates the feasibility of using grazing emission x - ray fluorescence spectroscopy as a method of studying the thin layer ' s characteristics, such as composition and thickiness etc. with the intimately combining of theoretical, set - up and experimental research, the study on the analysis techniques of grazing emission x - ray fluorescence is developed, and the first set of grazing emission x - ray fluorescence setup is established. at the same time, the angular dependence of the fluorescence intensity with different thickness layer is measured. all the work in this thesis provides the basis for the further researches

    本論文採用理論、裝置和實驗研究密切結合的方式，開展了掠射x射線熒光分析技術研究工作，在國內建立了首臺掠出射x射線熒光光譜分析裝置，並對不同厚度單層和雙層薄膜樣品在掠出射條件下產生的熒光光強與掠射角的對應博士學位論文:掠射x射線熒光分析技術研究關系進行了實驗測定。
  8. The ba0. 7sr0. 3tio3 / pt / ti / sio2 / si multilayered heterostructures were also successfully prepared. the xrd analysis shows that bst thin films are perfect perovskite structure. the edax analysis reveals that ti content is rather higher in our bst thin films according to

    Edax成分分析表明bst薄膜樣品中欽的含量明顯偏高，這可能是由於五是高熔點金屬，較ba 、 sr金屬的熔點都高出許多之故。
  9. To find the parameters of preparation and annealing process associated with the best electrochromic properties of these films, following researches and experiments were carried out : to compare the visible light transmittance of the colored state with bleaching state of the electrochromic films which were annealed at different temperatures and for different duration, to count the dynamic optical density change, and to test the i - v relations of these films " electrochromic cycles and their colored / bleaching response time

    對經過不同熱處理溫度和不同熱處理持續時間得到的薄膜樣品的著色褪色可見光范圍內透射光譜的比較，計算薄膜動態光密度變化量的大小，測試薄膜著色褪色循環伏-安關系以及薄膜著色褪色響應時間的快慢，尋求到薄膜呈現最佳電致變色性能時所對應的制備參數與熱處理參數。
  10. The temperature from amorphous to crystal of tungsten oxide sol - gel films with catalyst is increased and the reason is in studying. as results of tunnel scan - afm, both pt sputtered tungsten oxide films and pt sputtered tungsten oxide sol - gel films there is distinct and out - of - order parallel line structure on the surface of amorphous. molecules of the sample tend to tetrahedron and the former has more planarer structure

    隧道-原子力顯微鏡測試結果表明:非晶態時，磁控濺射摻鉑薄膜樣品表面和溶膠凝膠摻鉑樣品表面都有明顯的平行線狀結構，長程無序，分子趨於四面體結構，只是前者比後者表面較平整;晶態時，磁控摻鉑樣品在自然生長面上原子呈平面分佈，長程有序，溶膠摻鉑樣品則呈wo6面心結構。
  11. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  12. This indicated an absence of deep trapping centers. this peak was still observed at room temperature, temperature. the presence of this intrinsic near - band - gap emission line in the pl spectrum even at room temperature is a further indication for the high quality of the epitaxial layer

    Znse薄膜樣品在77k時，光致發光譜中只觀測到了近帶邊的發射，而且這一發光一直持續到室溫，說明在si襯底上lp - mocvd外延生長的znse薄膜具有較高的質量。
  13. We use the laser output ( 320 nm, 200 fs ) of optical parametric amplifier ( opa ) in < wp = 5 > an active passive mode - locked femtosecond ti - sapphire laser operating at a repetition rate of 1khz as a exciting resource to develop optically pumped stimulated emission of zno thin films. when rectangular stripe laser irradiates thin films, optical resonant cavity is naturally formed between two nanocrystallites along with the rectangular laser stripe and planar weveguide confines the light scattering

    利用飛秒激光器作為光泵浦激發光源，研究了氧化鋅薄膜的光泵浦受激發射，當條形光斑輻照薄膜樣品時，將沿著光斑條由氧化鋅納米晶面自然地形成光學諧振腔，由於平面介質波導結構限制光散射，所以成功地觀測到二氧化硅襯底上的納米氧化鋅（ zno ）薄膜的紫外受激發射。
  14. Life time of mn2 + in nano - zns was measured and was found to be close to that of the bulk materials. therefore the quenching centers quench the exciton but not the mn2 + ion self. 2. the increasing curves are different in film and ethanol colloids because there is diffusion process of quenching centers in colloids

    對薄膜樣品的熒光增強曲線的擬合表明，顆粒表面猝滅中心數目隨輻照時間的衰減函數是非e指數形式;同時考慮溶液中猝滅中心通過向顆粒表面的擴散而逐漸耗盡，很好地解釋了溶膠的增強曲線與固體薄膜的增強曲線的不同。
  15. The results indicate that it has an excellent surface. aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas

    氮化鋁薄膜樣品是利用高純鋁靶，在氮氣加氬氣氣氛下用直流和射頻反應磁控濺射法制備的。
  16. The experimental setups have been built in the use of the photothermal deflection technology and surface thermal lensing technology, respectively. the weak absorption of different optical thin films has been measured. the experimental results obtained from the above two methods were compared

    4 .分別建立了表面熱透鏡技術和光熱偏轉技術測量光學薄膜微弱吸收的實驗裝置，對多種光學薄膜樣品的微弱吸收進行了測量，並將兩種方法測得的實驗結果進行了比較。
  17. Nano - zns : mn2 + dispersed in pvb film has the same enhancement after exposure in solar light. the material has potential on measuring the dosage of uv irradiation of solar light

    薄膜樣品在太陽光輻照下同樣有熒光增強行為，預示該樣品可以作為一種紫外輻照劑量的記錄材料。
  18. With the increase of the amount of al, the intensity of the pl peak at 510nm increases. with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co - function of al, si, and o. el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films, si - sio2 films, and al - sio2 films )

    用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發光現象，峰位都在510nm左右，其峰位不因薄膜樣品內所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發光主要來源於電子和空穴在510 、基質中的發光中心的輻射復合發光。
  19. In the paper properties of the samples were also studied in detail

    文中還詳細闡述了cbd - cds薄膜樣品性能的分析和測試。
  20. In this thesis, we studied optical properties of eu3 + and mn2 + doped zns nanocrystallites. the new results are as follows : 1. zns : mn2 + ethanol colloids were synthesized and dispersed into pvb film. the luminescence enhancement of mn2 + was observed after ultraviolet irradiation

    制備出納米zns : mn2 +乙醇溶膠和pvb薄膜樣品，均觀察到紫外光輻照下的熒光增強現象，增長倍數超過20倍，高於以前的報導，並發現樣品在固體薄膜和溶膠中有不同的熒光增強行為。
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