薄靶 的英文怎麼說

中文拼音 [bóbǎ]
薄靶 英文
thin target
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 靶 : 1. （射擊的目標） target 2. （轡革; 韁繩） bridle; halter; reins
  1. Preparation process of aerogel films for icf target by sol - gel spin - coating method

    靶用氣凝膠薄膜工藝研究
  2. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  3. Elastic recoil detection technique with high depth resolution has been developed at the hi - 13 tandem accelerator of ciae. with high quality beam which was used for bombarding target, the recoils were detected with q3d magnetic spectrometer following a focal plane detector and a ae - e telescope detector with longitudinal double - room ionization chamber

    該系統用高質量的重離子束轟擊薄膜或塊材靶樣品，利用q3d磁譜儀及其焦面探測器和縱向型雙電離室e ? e望遠鏡探測器兩套探測系統，在前角區測量了靶中各種元素的反沖能譜。
  4. Fabrication method of inertial confinement fusion alloy - films target

    慣性約束聚變用合金薄膜靶制備方法
  5. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  6. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  7. In this dissertation, a special shape cylindrical target of ybco is designed and sintered for the inverted cylindrical dc sputtering ( icds ) device. then, the thickness distribution of the 3 inch size thin films has been simulated

    本文針對3英寸ybco高溫超導雙面薄膜的制備技術，研究了靶材燒制、薄膜膜厚分佈、加熱器設計與製作，制備出了具有87k超導性的3英寸ybco雙面薄膜樣品。
  8. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  9. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  10. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  11. The amount of power that can be dissipated in a thin target is limited.

    薄靶中所可能散逸的功率是有限的。
  12. Fuel retention properties of thin - wall glass target in low temperature

    薄壁玻璃靶丸低溫保氣性能研究
  13. In this paper, several thin films samples of vanadium oxide were got by high - frequency magnetron sputter with pure metal vanadium as sputter source

    本文以高純金屬釩作為靶材，採用磁控濺射工藝制備氧化釩薄膜。
  14. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  15. There are better performances in the films prepared by ba2ca2cu3ox target than by ba2cacu2ox target. the single - phase tl2ba2cacu2o8 hts thin film was obtained with a tc0 of 107k at the optimal tl2o partial pressure and thallination temperature 750. on excursion from the optimal conditions, there exist some impurities in the resultant films resulting in a reduction in tc0 and surface quality with change in the microstructure morphology

    研究結果表明，採用成分為ba2ca2cu3ox的靶材制備的薄膜性能要優于成分為ba2cacu2ox的靶材；使用組成式為tl1 . 9ba2ca2cu3oy的鉈片做鉈源時，形成的tl2o分壓達到最佳值；在最佳tl2o分壓和最佳鉈化溫度750的條件下，制備出了純相完全c軸取向的tl2ba2cacu2o8高溫超導薄膜，其tc0高達107k ，膜面均勻平整光滑，呈圓片狀組織；偏離最佳制備工藝參數的條件下，制得的薄膜中都含有一定量的雜相，雜相的生成使得tc0值下降，薄膜表面質量下降，薄膜組織形貌發生變化。
  16. Aluminum alloy films and sputtering targets for semiconductor integrated circuit wiring and electrodes

    集成電路電極布線用鋁合金薄膜及其濺射靶材
  17. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  18. In this article, by rf sputtering the licoo _ 2 film was produced. by hot pressing and cold pressing ( and sintering ), the licoo _ 2 targets used in the rf sputtering were produced differently. both technics of the preparation of the licoo _ 2 film and the licoo _ 2 target were studied

    本文使用熱壓燒結方法和冷壓后燒結方法制備了磁控濺射用的licoo _ 2靶材，並使用磁控濺射方法制備了licoo _ 2薄膜，對兩者的制備工藝進行了研究。
  19. Many measures were adopted to decrease bombard in order to improve the solar cells propertivity, such as decreasing target voltage, increasing target distance, accelerating the movement of the substrate. by optimizing the experimental conditions, short - circuit current was increased by 3. 7ma / cm2, the conversion efficiency was increased by 2 %, the stability was improved

    在硅薄膜電池的zno ： al al背反射電極應用方面，通過減小靶電壓、適當增加靶距和基片的運行速度來減小對電池的轟擊，改善電池性能，通過優化實驗條件，使電池的短路電流提升了3 . 7ma cm ~ 2 ，效率增加了2 ，穩定性得到改善。
  20. By means of pld, it is easy to achieve ingredient homology between film and target. moreover, the deposition experiment condition is easy to control with a high deposition rate, a short deposition cycle and a wide application

    Pld是制備薄膜的最好方法之一， pld制備薄膜具有膜成分容易做到與靶成分一致，沉積條件容易控制、沉積速率高、實驗周期短、應用范圍大的特點。
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