藍寶石襯底 的英文怎麼說

中文拼音 [labǎodànchènde]
藍寶石襯底 英文
sapphire substrate
  • 藍 : 藍Ⅰ形 （像晴天天空的顏色） blue Ⅱ名詞1. [植物學] （蓼藍） indigo plant2. （姓氏） a surname
  • 寶 : Ⅰ名詞1 （珍貴物） treasure; treasured object 2 （一種賭具） gambling device 3 （銀錢貨幣） curren...
  • 石 : 石量詞（容量單位, 十斗為一石） dan, a unit of dry measure for grain （= l00 sheng）
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 藍寶石 : sapphire; leucosapphire
  1. The results of design explain that if sio2 films deposited on the surfaces of sapphire the average transmittance in 3 ~ 5 m waveband can exceed 97 %, which can meet the requirements of missile dome in infrared application

    設計結果表明，藍寶石襯底雙面鍍sio _ 2 、 sio _ 2 / si等膜系，在3 5 m波段的平均透過率大於97 ，可滿足導彈頭罩設計和使用的要求。
  2. The results reveal that the single - crystal silicon carbide films with smooth and continuous apperance are obtained under the reported experimental conditions

    結果表明，在藍寶石復合襯底上可以生長出均勻連續的sic單晶薄膜。
  3. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  4. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  5. ( 2 ) with the aid of in situ monitoring tool, we have investigated the effects of substrate nitridation

    （ 2 ）以在位監測為輔助工具，研究了藍寶石襯底氮化的影響。
  6. Standard guide for measuring characteristics of sapphire substrates

    藍寶石襯底的特徵測量標準指南
  7. What ' s more, we have studied t he properties of the films. the work is base for sio2 used as anti - reflective and protective coatings on sapphire dome

    本文主要開展了藍寶石襯底上氧化硅增透保護膜系的設計與制備工藝和性能研究，為將氧化硅用作藍寶石頭罩的增透保護塗層奠定了基礎。
  8. At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe

    目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。
  9. The average transmittance at a wavelength of 3 ~ 5 m of sapphire coated with one layer of sio2 antireflective films on two sides can reach 96. 43 %. so as to the transmittance of coated sapphire can satisfy the demand of window and dome applications

    藍寶石襯底雙面鍍sio _ 2膜，在3 5 m波段范圍內，平均透過率達到96 . 43 ，滿足了導彈頭罩的設計使用要求。
  10. The main contents and results are listed as follows : with the help of opfcad software, anti - reflective and protective films of sio2 and sio2 / si are designed on the sapphire substrate and analysis of structure sensitive factor and variation are done

    主要研究成果如下：利用opfcad軟體在藍寶石襯底上設計了sio _ 2 、 sio _ 2 si等增透保護膜系，並對所設計的膜系進行了結構敏感因子（ n ， d ）及結構偏差分析。
  11. The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491

    通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。
  12. These devices include light - emitting diode, laser diode, uv - detector, mesfet, hemt, modfet etc. since 1990 ' s, on the basis of advanced techniques of materials preparation, gan - based leds and lds were achieved successfully, and leds on sapphire substrates have already been commercialized

    九十年代以來，在先進制備技術的基礎上， gan基leds和lds分別研製成功，其中藍寶石襯底上的leds已經進入了商品化。 gan基微電子器件也得到了廣泛的關注，取得了一定的研究進展。
  13. The morphologies of one - dimensional gan nano structures were affected greatly by substrates. we can get different one - dimensional gan nano structures by choosing different substrates. among the products, smooth and straight gan nanowires on quartz substrates, long and transparent gan nanobelts on sapphire substrates, short gan nanorods on si substrates and gan nanopoles on gaas substrates were found, respectively

    我們可以通過選擇不同的襯底來分別合成形態不同的一維gan納米結構，其中在石英襯底上合成的是平直的gan納米線，在藍寶石襯底上合成的是細長透明的gan納米帶，在gaas襯底上合成的是柱狀的一維gan納米結構，而在以襯底上合成的是粗短的gan納米棒。
  14. In this thesis, we grow hexagonal gan on c - plane sapphire substrates in a horizontal mocvd reactor equipped with an in situ normal incidence reflectance monitoring, and the focus has been turned to improve the quality of unintentionally doped gan epilayer. listed below are the main contents of this thesis. ( 1 ) a single - wavelength normal incidence reflectance monitoring system was installed

    本文利用配有近垂直入射激光反射在位監測的臥式mocvd在c面藍寶石襯底上生長六方相的gan薄膜，圍繞提高本徵gan外延層質量的目的，開展了具體如下的工作： （ 1 ）在mocvd設備上搭建了一套單波長近垂直入射激光反射在位監測系統。
  15. Preparation and properties of si3n4 films on sapphire and si substrates

    藍寶石和硅襯底上氮化硅薄膜的制備和性能研究
  16. The defect and interface in sapphire and gan were observed by afm. we found that when the dislocation density in sapphire was lower thanl05 / cm2, the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire. the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4, and the mo content in gan was lower than ppm. so it was concluded that low - cost mo crucible is viable

    用掃描電鏡（ sem ） 、 xps 、電子探針和紫外熒光光譜儀測量了藍寶石襯底和gan外延層中的mo雜質的含量，發現藍寶石襯底中含有mo雜質，含量約為10 ~ （ - 4 ） （質量含量） ；而在外延層gan中沒有檢測到mo雜質，即mo雜質含量小於ppm級。
  17. The experiment results showed we had got well nanowires on si and sapphire substrate and the au and ag act catalyst respectively, we got zno nanowires array on si and sapphire substrate using the ag as catalyst. 2. we measured the pl spectrum of zno nanowires samples excited by an ultraviolet fluorescence spectrophotometer in different wavelength

    實驗結果顯示分別採用金和銀為催化劑在硅襯底和藍寶石襯底上制備出結晶質量較好的納米線，其中在銀催化的硅基片和藍寶石基片上制備出排列整齊的納米線陣列。
  18. We also summarized the rules and the effects to the growth of gan nano structures and gan films. 1. one - dimensional gan nano structures were synthesized on different substrates through nitriding 03263 films grown by radio frequency ( r. f. )

    薄膜的兩步生長工藝，成功地在石英、藍寶石（ a12o3 ） 、 st和gaas等不同襯底上合成了形態不一的高質量的一維gan納米結構。
  19. In this paper, accordiflg to the working pri nci p1es of devi cg, we design the struc ture narameter of device, and then the hexagona1 and cubic gan epitaxial layers were grown. on sapp1re and gaas substrates respect ive1y. as a resu1 t, we have fabricated gan - - based msm uv photodetectors, the responsi vity of device reach 0

    本文依據msm結構探測器的工作原理，設計了器件的結構參數，並分別以藍寶石和gaas為襯底材料生長了六方結構和四方結構的gan材料，在此基礎上制備出gan - msm紫外光探測器，並取得了一些有意義的結果，我們的器件光響應度最好可達0 . 21a w 。
  20. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
分享友人
分享到 Line

分享到臉書