藍移位 的英文怎麼說

中文拼音 [lawèi]
藍移位 英文
blue shift
  • : 藍Ⅰ形 (像晴天天空的顏色) blue Ⅱ名詞1. [植物學] (蓼藍) indigo plant2. (姓氏) a surname
  • : Ⅰ動詞1. (移動) move; remove; shift 2. (改變; 變動) change; alter Ⅱ名詞(姓氏) a surname
  • : Ⅰ名詞1 (所在或所佔的地方) place; location 2 (職位; 地位) position; post; status 3 (特指皇帝...
  • 移位 : bit shift
  1. Her 9 years old daughter has bilateral blue irides, bilateral total deafness, dystopia canthorum and bilateral fundus pigmentary changes

    第三例為第一例九歲之小女兒,雙側虹彩全,雙側全聾,內眥和雙側眼底色素變化。
  2. Her 11 years old daughter has a blue iris in her right eye, bilateral total deafness, dystopia canthorum and bilateral fundus pigmentary changes

    第一例為一三十六歲母親,右眼虹彩全,左眼虹彩部份色,雙側全聾,內眥和雙側眼底色素變化。
  3. In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps

    在第z三章中;通過對比,分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響,認為在一定的范圍內,多i孔硅的發光峰會隨電流密度的增大而,要獲得較強的發光,需z要選擇合適的電流密度;隨著腐蝕時間的延長,多孔硅的發光峰會i發生;當f酸的濃度較小q : 1 )時,峰隨濃度的增大表現為向i低能動;而當f酸的濃度較大河山時,峰隨濃度的增大則表現z為向高能;多孔硅在空氣中自然氧化;其發光峰發生,而強i度隨放置時間的延長而降低。
  4. Upon closer view, these five small areas of endometriosis have a reddish - brown to bluish appearance

    圖示:更近的子宮內膜外觀,五個子宮內膜病灶呈紅棕色至淺色外觀。
  5. The conclusions are as listed below : compared with absorption of fc16ab in chloroformon, the absorption peak of fcifrab in lb films shifted toward the shorter wavelength region, suggesting that some interaction among molecules due to the close molecular packing such as h - aggregates in the lb films. comparing uv - vis spectra of fc16ab in lb films deposited from cl - subphase with from aqueous subphase, this blue shift phenomenon of absorption demonstrated cl - made the compactness of fc16ab lb films increasing. ft - ir spectra of fc16ab in lb films at different temperature showed that there is a gradual disordering of alkyl chain from 27 ? to 200 ?, but no district phase transition appeared

    結論如下:紫外-可見光吸收光譜說明:與fc _ ( 16 ) ab氯仿溶液相比, lb膜的吸收光譜發生了,這歸結于fc _ ( 16 ) ab發生了h -聚集以及抗衡離子可以使fc _ ( 16 ) ab的lb膜排列更緊密;變溫紅外光譜說明,隨著溫度升高, fc _ ( 16 ) ab的lb膜中烷基鏈的有序排布程度減弱,這表明該lb膜熱穩定性減弱,但在減弱的過程中沒有出安徽人學申請碩士學論文摘要現相轉變。
  6. ( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires

    ( 3 )當施主離子於勢阱中不同置時,零電場下量子阱線中的雜質態是關于施主離子置中心對稱的簡並態,在外加電場作用下發生能級分裂,這種簡並不再存在;雜質的stark能由於施主離子置的不同表現為紅
  7. The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon

    採用脈沖和直流電化學腐蝕兩種方法制備多孔硅,對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量,發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大,而且發光峰有明顯的現象。
  8. The photoluminescence of the thin films without post heating is weak. only one luminescence band is found nearby 473nm. two luminescence bands are found after post heating, nearby 493nm and 368nm respectively. the intensity of the luminescence bands increase little by little when the temperature and the time of post heating continues to increase

    而退火處理過后,薄膜出現兩種光致發光現象,即色發光和紫外發光,其峰值分別在493nm和368nm附近,而且隨著退火溫度的升高和退火時間的延長,發光譜帶的強度逐漸增大,峰形的置也有不明顯的
  9. We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band

    另外,我們還對薄膜光致發光性質進行了分析和研究,結果表明:納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光, pl譜的帶邊發射峰發生是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小,使薄膜的有效帶隙增寬; zno薄膜的紅色發光,一方面是zno顆粒尺寸的減少,帶間的激子發射峰越來越弱直至猝滅,另一方面主要是與zno晶格中的o空有關,由深能級復合發光引起紅光發射。
  10. Blue dynamic lateral correction

    動態校正
  11. Four peaks in the photoluminescence ( pl ) spectra of the composite of porous alumina and dbo - ppv, which were contributed from both of dbo - ppv and porous alumina, were found

    多孔氧化鋁dbo干pv復合體系的pl譜出現了四個峰,多孔氧化鋁的峰置沒有發生改變, dbo ppv的三個峰發生了90urn的
  12. The blue shift could be associated with precipitation of xe gas bubbles. since the precipitation will change the defect morphology and reduce the sizes of each isolated defects, so to intensify the quantum size effects of nano - particles and induce the observed band gap broadening

    10 ~ ( 17 ) cm ~ ( - 2 )樣品峰,是由於xe以氣泡形式析出,改變了缺陷形態、使缺陷的分立尺寸減小,納米粒子的量子尺寸效應變得明顯,導致能隙展寬。
  13. Those samples treated show a major peak at 2. 02ev and a minor one at 2. 13ev at a given low temperature and experiences a blue - peak - shift at room temperature. a defect model is abstract suggested to account for the pl of sintered psc

    經氧化研磨或研磨的樣品在低溫下有較高的發光強度,發光主峰於2 . 02ev ,在2 . 13ev有一弱峰,室溫下發光峰發生
  14. For other sample which also appeared two peaks the change of its two peaks varied with the temperature was observed. the higher energy peak remained stable with the temperature change. however the intensity of the lower energy peak was enhanced and the peak position had a blue - shift with the rise of temperature

    對于熒光雙峰的多孔硅樣品,研究了熒光峰隨溫度變化的性質,隨著溫度的升高,熒光高能峰基本上不發生變化,而熒光低能峰隨著溫度的升高其強度逐漸增強,峰發生明顯的
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