襯底區 的英文怎麼說

中文拼音 [chènde]
襯底區 英文
substrate zone
  • : Ⅰ動詞1 (在裏面托上一層) line; place sth underneath 2 (陪襯; 襯托) set off Ⅱ名詞(襯在裏面的附...
  • : 底助詞(用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」)
  • : 區名詞(姓氏) a surname
  1. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能,我們採用溶膠-凝膠旋塗法在si上生長出具有高度c軸取向的zno : al薄膜,摻al濃度為5mol . % ,並以此作為有源成功制備出了au / zno : al / au光電導型紫外探測器的原型器件,並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  2. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法,深入研究了漂移長度、漂移濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  3. With an analysis of soil liquefaction potential for free field of nanjing metro line 1 under 7 degree earthquake, as well as for excavated field, in line with railway engineering anti - earthquake design specification, dynamic triaxial tests and theoretical analysis using efficient stress method, the author comes to the conclusion that, when metro plate is located at layer s and the layer is thick, liquefied area is at metro bottom plate ; in some local section liquefied area is at metro top plate, or arch sides at the top of metro in most places

    摘要採用鐵路工程抗震設計規范、動三軸試驗及有效應力的理論分析相結合的方法,對南京地鐵南北線( 1號線)間隧道開挖后其地基土在7度地震情況下的土層液化情況進行分析得出:當隧道板坐落在5層且5層較厚時的液化出現在隧道板處;局部地段液化出現在隧道頂部及拱腰;大部分地段的液化出現在隧道頂板上方。
  4. It is widely applied to the stove top, shove head, stove door and burmer brick, the binding of cooling - tube and groove bottom of the molten steel mouth of the heat stove, meantime empopyed in the field of the step stove bottom, the fir - proof wall of the circular stove, the cover, the protruding tape and sand sealing mouth of the equal - heating stove, the triangle, the spray gun and meltingiron groove of electric stove and also including fire - resistant material used in the refine stove and the stove door

    加熱爐的爐頂、爐頭、爐門、燒嘴磚、水冷管包紮、出鋼槽槽、步進爐爐、環形爐檔火墻、均熱爐的爐蓋、凸出帶、砂封口、中間包包蓋、電爐三角、鐵水包里、爐外精煉用噴槍,吹氧煙道、鐵水溝蓋、檔渣堰、高爐中各種耐用火料里煉焦爐爐門等。
  5. Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc, on which an amorphous transition layer develops, finally an well ordered film is obtained, " card - packing ", " amorphous accumulation " and " brick - stacking " are adopted hi three different layers

    Znf _ ( 16 ) pc分子在石英上的生長基本符合stransky - krastanov模型:通過f -原子與石英的強相互作用形成奠基層,發展成無定型的過渡層,最後形成有序的結晶層。在這三個域內分子分別採取「 card - packing 」 、 「 amorphousaccumulation 」和「 brick - stacking 」排列方式。
  6. The effect of substrate temperature on the accumulation of disorder is substantial.

    溫度對于無序積累的影響是很顯著的。
  7. In the third section, i. e. chapter five, the normal raman spectra of nil2, cul2, pdl2 powder are studied under the excitation of laser with the wavelength of 632. 8nm and aqueous silver colloid is prepared by pulsed laser ablation, from which the surface enhanced raman spectra of the three compounds are obtained. after preliminary assignment, the identical and different features of vibration of the compounds due to the different central metal atoms are analyzed

    第三部分,即論文的第五章,我們以632 . 8nln為激發波長研究了nilz 、 culz和pdl :三種新型金屬有機化合物粉末的正常拉曼光譜,並且以脈沖激光刻蝕法制備了水銀膠,以其為研究了三種化合物溶液在其上的表面增強拉曼光譜,通過對其拉曼光譜進行了初步指認,了解由於中心原子的不同,三種金屬有機化合物分子振動的相同和別。
  8. Thermal and structure character of straight reheating furnace were analyzed in csp technological process. coupling with heat conduction differential equations of the thin slab and the furnace lining, the mathemat ical model of heat transfer is established in the long one dimension furnace by using zone method for making the model of radiant heat transfer. the effect of the moving velocity and kinds of the slab on temperature distribution in the furnace is discussed based upon the solutions to the mathematical model

    通過分析csp工藝中直通式輥加熱爐的熱工及結構特性,採用域法建立爐內輻射換熱數學模型,與加熱爐內連鑄坯及爐的一維導熱方程相耦合,建立長一維直通式輥加熱爐爐內傳熱數學模型.通過對數學模型的求解,研究分析了不同的薄板坯移動速度及鋼種對加熱爐爐內溫度分佈的影響
  9. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源( tmg )和99 . 9999純度的氮氣,在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散,在放置於下游樣品臺上的- al _ 2o _ 3表面附近發生物理化學反應沉積成gan薄膜。
  10. We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3

    本文主要進行了三個方面的工作: 1 、提出了降場電極u形漂移的橫向高壓器件結構tsoi ( trenchsoi ) ,並建立了該結構的解析理論[ 1 ] ; 2 、提出基於simox外延esoi ( epitaxialsimoxsoi )的器件結構; 3 、設計了基於simox處延結構的功率開關集成電路。
  11. The four - bedroom two en suite sky house has a gross interior area of 1, 825 sq ft. the two - level layout is spacious and functional, with french windows throughout offering 180 - degree views of the ting kau and tsing ma bridges. the gold, brown and black interior colour scheme typifies luxury living. the living room has an extra - high ceiling, distinctive chandelier and a skylight that admits natural light during the day and glittering stars when night falls

    客廳的特色吊燈,份外映特高樓的偌大空間感,輕松寫意而客廳悉心設計的天窗,為內獨有,日間可收納天然日光,增添一室明亮,晚上可觀賞點點繁星,份外心動醉人于私人平臺花園及天臺可無拘無束地遠眺無邊景緻,必定是繁忙都市人夢寐以求的悠閑時刻。
  12. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中,採用了smart功率集成技術實現電路的大功率,基是外延層的縱向pnp晶體管作為輸出,將集電極置於晶元背面,採用低電阻率p ~ +作為歐姆接觸。
  13. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知, sigehbt的主要特點之一就是在si材料上生長的sige材料是應變的,為了在後續的高溫退火工藝中不發生晶格馳豫現象,通常要求器件的基要做的很薄,同時為了不增加器件的熱噪音,通常sigehbt基都是高摻雜的。
  14. Abstract : thermal and structure character of straight reheating furnace were analyzed in csp technological process. coupling with heat conduction differential equations of the thin slab and the furnace lining, the mathemat ical model of heat transfer is established in the long one dimension furnace by using zone method for making the model of radiant heat transfer. the effect of the moving velocity and kinds of the slab on temperature distribution in the furnace is discussed based upon the solutions to the mathematical model

    文摘:通過分析csp工藝中直通式輥加熱爐的熱工及結構特性,採用域法建立爐內輻射換熱數學模型,與加熱爐內連鑄坯及爐的一維導熱方程相耦合,建立長一維直通式輥加熱爐爐內傳熱數學模型.通過對數學模型的求解,研究分析了不同的薄板坯移動速度及鋼種對加熱爐爐內溫度分佈的影響
  15. High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe

    研究了採用mbe系統沉積zns _ xse _ ( 1 - x )多晶薄膜的生長機理,分析了溫度、沉積速率及薄膜組分對薄膜微結構的影響,提出的「類結構域模型」可以較完整地解釋ito上zns _ xse _ ( 1 - x )多晶薄膜生長的機理。
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