襯底強度 的英文怎麼說

中文拼音 [chèndeqiáng]
襯底強度 英文
substrate strength
  • : Ⅰ動詞1 (在裏面托上一層) line; place sth underneath 2 (陪襯; 襯托) set off Ⅱ名詞(襯在裏面的附...
  • : 底助詞(用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」)
  • : 強形容詞(強硬不屈;固執) stubborn; unyielding
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  1. The exterior and the install sizes all in the light of iso international criterion to design and make, the whole structure adopt after pull pattern of electrical engine direct link my companys patent, by centernog prop up, the structure is tightly, teardown and maintenance is convenient the bound of capability is broad the alnico of passing wrestdistance uses of advanced thulium material permanent magnet nd fe boron to make inside and outside magnet ; uses of the most streampadd nonmetallic material pad f46 inside to be made - up isolationsheath assembled and its provided with high strength dynam capability

    ,整體結構採用電機直聯的后拉式我公司專利,由中間支架支撐,結構緊湊,拆卸維護方便,性能范圍寬傳遞扭矩的磁鋼選用先進的稀土材料永磁體「釹鐵硼」製造內外磁體,使用最新型非金屬材料內f46製成的隔離套組合具有高的力學性能,徹消除了一般磁力泵具有的磁渦流損耗,提高了整機的效率。
  2. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外,本文通過反射式高能電子衍射( rheed )監測了gasb外延薄膜的生長,利用rheed振蕩的計算機採集系統實現了rheed圖像和rheed振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態,溫升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和生長的gasb薄膜的表面形貌進行觀察分析,並與模擬結果進行比較。
  3. With the development of fiber - optic communication systems and fiber - optic sensors, the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure get an extensively application

    隨著光纖通信與光纖傳感的發展,以linbo _ 3為材料、以m - z干涉儀為光波導結構、採用共面行波電極( cpw )為調制電極的集成光學調制器得到了越來越廣泛的應用。
  4. As far the trend of fiber - optic communication systems is to obtain higher capacity, and higher transmission speed. the intensity modulator is widely applied to a lot of fields. it is necessary for the intensity modulator subject to the laser pulse rectification systems that should be provided with following performances as high speed signal transmission and quick response and so on

    光纖通信向著大容量、高速寬帶方向發展,光纖延遲線系統要求調制器具有高速信號傳輸、快速響應的特點,因此以linbo _ 3為材料的集成光學調制器具有十分良好的應用前景。
  5. Test methods for the determination of bond strength of impregnating agents to an enamelled wire substrate

    浸漬劑對漆包線的附著的測定試驗方法
  6. Test method for adhesion strength of bondable films to substrates in ribbon - wire bonds

    綁線連接時可粘性膜同的粘結的試驗方法
  7. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上,採用電子迴旋共振等離子體增mocvd ( ecr - pamocvd )方法,在藍寶石上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝,包括清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長;通過高能電子衍射、 x射線衍射和原子力顯微鏡測試,並且對這些測試結果進行了詳細的比較研究,得出了較優化的工藝條件,生長出了晶質較好、表面較平整的aln外延層;進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫的限制,我們沒有能夠生長出原子級平滑的aln外延層表面,因而沒能夠生長出密比較大和直徑比較小的量子點。
  8. Otherwise we also invest the effect of different parameters such as substrate temperature and o2 / ar ratio on zno film while growing, when the films fabricated at 600 and o2 : ar ratio equal to 1 : 2, the best quality films can be obtained

    在linbo3上生長zno薄膜過程中,分析了和氧氣與氬氣含量對薄膜質量的影響。實驗表明在的為600和o2 : ar為2 : 1時生長的zno薄膜擇優取向,晶體性能好。
  9. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上,討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學,在利用脈沖激光淀積法外延生長氧化物薄膜中是十分重要的工藝參數.對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在表面成核、成相併生長.因此材料晶格的影響是不容忽視的.觀察到材料對薄膜外延生長溫的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  10. So the application prospects of linbo _ 3 integrated optic intensity modulators are getting better. the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure is presented in this thesis

    本課題旨在研究以linbo _ 3為材料、以m - z干涉型光波導結構為基礎、以cpw行波電極為調制電極的集成光學調制器。
  11. Standard test method for determining average bonding peel strength between the top and bottom layers of needle - punched geosynthetic clay liners

    針刺式土工合成粘土裡的最上層和層間平均粘結剝離測定的標準試驗方法
  12. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了和反應氣體壓對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  13. The surface of zncdse / znse qw grown on zno buffered si substrate is free of micro - cracks that is observed on the surface of the sample deposited directly on si substrate

    Zncdte znte量子阱結構的表面沒有微裂紋,其發光較直接在si上生長的zncdte znte量子阱有很大提高。
  14. So the application prospects of linbo _ 3 integrated optic intensity modulators are getting better. two - section cascaded ln intensity modulator applied to laser pulse rectification is presented in this thesis. it is constituted with two - section m - z optical waveguide and cpw traveling - wave modulation electrode

    本課題旨在研究以linbo _ 3為材料、以兩級串聯m - z干涉型光波導結構為基礎、以cpw行波電極為調制電極、用於核爆模擬領域激光脈沖整形的集成光學調制器。
  15. Also shown by afm images are the regular features of crystals and ordered crystal domains for the film grown on 200 substrates, the morphologies indicate a phase transition, which is clearly confirmed by contrast between ( 0, 0 ) and ( 0, 1 ) absorption features and the bathoshift of ( 0, 0 ) absorption peak corresponding to the temperature of the substrate

    Afm圖像同時顯示,在200的上生長的薄膜具有規則的晶體外型和有序排列的微疇,說明存在結晶轉變。 f - ptcdi薄膜的吸收光譜的( 0 , 0 )和( 0 , 1 )性狀的對比與紅移程的變化清晰地表現出150到200之間存在一個相變, dsc測試說明該轉變是從低有序到高有序的轉變。
  16. The foundation of back is10 steel or spcc, the surface is agglomerated by different trademarks copper and lead powder, resistant against : tiredness, abrasion, heat, has good carrying capability, especially, be the same with the connecting rod clevel, rocker, gear case, cranking motor, trig chasis, and motor gear case, redirector, hydraulic pressure oil pump, engineer

    產品具有疲勞高,耐磨不發熱,承載能力大等特點,特別適用於汽車發動機的連桿搖臂,輪箱,起動馬達,制動盤及摩托車輪箱,轉向器,液壓油泵,工程機械,空調壓速機等場合,目前我廠是國內最大的發動機連桿套生產企業之一。
  17. Methods of test for mortar for masonry - determination of adhesive strength of hardened rendering and plastering mortars on substrates

    圬工輔助砌塊的試驗方法.上的硬化打灰漿和灰泥漿的粘結的測定
  18. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜,我們採用金屬有機源和二氧化碳氣源,首次利用等離子體增化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜,確定了生長高質量氧化鋅薄膜的優化條件;研究了不同的和退火溫對氧化鋅納米薄膜質量的影響。
  19. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜,我們採用金屬有機源和二氧化碳氣源,首次利用等離子體增化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜,系統地研究了生長條件以及表面氧化層對薄膜質量的影響,確定了生長高質量氧化鋅薄膜的優化條件;為獲得p - zno材料,克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難,我們通過熱氧化zn3n2的方法制備了p - zno ,獲得了一系列研究結果: 1 、詳細研究了氣體流速比,和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  20. During the inspection by afm and sem, we found that the surfaces morphology of samples was even and smooth, the surface roughness was small. the films were composed of some excellent columnar crystallites. the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching

    由以上對azo薄膜的組織結構和光電性質的研究,我們得到了用直流反應磁控濺射法制備azo薄膜的最佳工藝條件為:氧氬比0 . 3 / 27 ,200 ,工作壓5pa ,靶基距7 . 5cm ,功率58w ,退火溫400 。
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