角度值數顯表 的英文怎麼說

中文拼音 [jiǎodùzhíshǔxiǎnbiǎo]
角度值數顯表 英文
angle digital readout
  • 角 : 角Ⅰ名詞1 （牛、羊、 鹿等頭上長出的堅硬的東西） horn 2 （古時軍中吹的樂器） bugle; horn 3 （形狀像...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 數 : 數副詞（屢次） frequently; repeatedly
  • 顯 : Ⅰ形容詞1 （明顯） apparent; obvious; noticeable; evident 2 （有名聲有權勢的） illustrious and inf...
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 角度 : 1. [數學] （角的大小） angle; the degree [size] of angle 2. （看事情的出發點） point of view; angle
  1. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  2. Based on the technical parameters, quality matter and character of polymeric materials and its products, the statistical method such as orthogonal array design, pareto diagram, histogram, significance testing, fuzzy mathematics have been used to carry out a series of study. by doing so, the inherence relationship and variance property, degree and reason of polymeric materials and its products have been obtained ; it could get better improved by adopting correcting measure

    本論文以高分子材料及其製件的工藝參數、質量問題和質量特徵值為研究對象，利用正交實驗設計、調查表、因果圖、排列圖、直方圖、控制圖、故障樹（ fta ） 、顯著性檢驗、相關分析以及模糊數學評定法等多種統計技術方法，從不同角度進行了一系列探索性研究，得到了高分子材料及其製件內在關系及變異的性質、程度和原因，採取了糾正措施並取得了較好的效果。
  3. The results showed that the displacement of the surrounding rock of cavern evidently decreases with the increase of in - situ stress side pressure coefficient, as well as the decreasing rate of surrounding rock displacement of cavern with increasing at the condition of < 1 are significant larger than that of > 1 ; when < 1, the displacements of measured points in cavern increase then decrease with the increasing incident angle of shear wave, while, when > 1, the displacements decrease then increase with the increasing incident angle of shear wave, and the influence of incident angle on the displacements of measured points tends to decrease with the increasing in - situ stress side pressure coefficient

    分析結果表明，地震荷載作用下，硐室位移隨地應力側壓系數的增加明顯減小，地應力側壓系數< 1時的硐室位移量值隨側壓系數的變化幅度明顯大於地應力側壓系數> 1時的情況；當側壓系數< 1 ，隨剪切波入射角的變化，硐室測量點位移響應先增加后減小；而當側壓系數> 1 ，隨剪切波入射角的增加，硐室測點位移先減小后增加，同時隨地應力側壓系數的增加有減小的趨勢。
分享友人
分享到 Line

分享到臉書