載流子注入 的英文怎麼說

中文拼音 [zǎiliúzizhùrù]
載流子注入 英文
carrier injection
  • 載 : 載Ⅰ名詞（年） year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. The work on the simulation of filter, which was applied to the oled to improve the characteristic of chromatics of emission, was introduced

    有機發光器件的載流子注入、傳輸、復合過程與器件本身的材料、結構、工作電壓密切相關。
  2. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  3. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  4. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  5. High surface hole concentration p - type gan using mg implantation

    應用mg離子注入獲得高表面空穴載流子濃度p -型gan
  6. So, both 1 / f noise power spectrum measurement and similarity coefficient extracted from its time series can offer economical, effective and indestructible tool to detect the latent damage induced by esd and hci for mosfets

    因此，無論是1 / f噪聲功率譜的測試還是由其時間序列提取得到的相似系數均可以作為經濟、有效、完全非破壞性的工具，替代傳統的電特性用於檢測靜電引起的mos器件潛在損傷以及熱載流子注入損傷。
  7. The emphasis is about the metal line reliability, contact reliability, gate oxide integrity, and hot carrier injection in test. based on the test datum, the reliability of 1. 0 m process on single failure mechanisms is evaluated, and all the test structures are explained

    測試內容上著重介紹了金屬化完整性測試、氧化層完整性測試、連接完整性測試和熱載流子注入測試，根據測試數據，對1 . 0 m工藝線單一失效機理的可靠性進行了評價，對不同測試結構的作用進行了說明。
  8. We define the recombination time of excess electrons in p field as the minority carrier lifetime. in theory, we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover, the effect of capacitance to general open - circuit voltage is also investigated. both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells, which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry

    根據太陽電池的工作原理，詳細地論述了用脈沖光源照射n / p結太陽電池時光電壓的產生，理論上給出了注入p區的電子復合帶來的開路電壓與少子壽命的關系，也研究了n / p結勢壘電容放電對開路電壓衰減的影響關系，推導了利用開路電壓隨時間衰減的關系來測量少數載流子壽命的理論公式。
  9. Referring to the formation process of qd, it is accepted that there formed a groove around the dot during the formation process due to mass - transfer. when the dots were capped by a compound with larger band gap, there will appear a potential maximum due to larger confinement. the maximum will prevent the carriers from entering the dot, and the origin of the kink point is resulted from the prevention

    根據s - k模式量子點的形成過程，我們認為在點的形成過程中由於質量遷移會在點的周圍形成一個凹槽，加上覆蓋層后，由於大的量子限域效應該處將形成一個勢能極大值，該勢能極大值將阻礙載流子從勢壘層向量子點的注入，該過程是導致上述拐點出現的原因。
  10. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  11. After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes, the theoretical model of the leds * light - emitting efficiency was presented. based on this model, the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically, we found the calculated results agreed very well with the experimental results under the electric field from 0. 5 x 106 to 1. 5 x 106v / cm, the numeral calculations and theoretical analyzes of the light - emitting efficiency were done. the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination, the light - emitting efficiency was affected by many factors

    本文主要研究聚對苯乙炔（ ppv ）薄膜發光二極體發光效率及主要影響因素，簡單地介紹了ppv薄膜發光二極體的研究背景及發展趨勢、 ppv器件的結構和性質后，提出了一個計算器件發光效率理論模型，利用這個理論模型得出了發光效率公式的表達式：並對注入電流、復合效率等進行了數值計算，通過合理地選擇計算參數，發現計算值在場強為0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范圍內與實驗結果較好地符合，在此基礎上，對發光效率進行了數值計算和理論分析，結果表明：計算結果與理論研究結果相符較好，得出結論如下： （ 1 ）本文的理論推導正確地反映了器件中載流子的注入、傳輸和復合等基本機制； （ 2 ） ppv薄膜中的電致發光是激子復合的結果，發光效率受多種因素影響。
  12. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  13. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  14. Applying dh can enhance the injection ratio, strengthen the confinement to the carrier and enhanced the efficiency of the recombination. this make the brightness greatly enhance

    Dh結構不僅提高了載流子注入比並且加強了載流子限製作用，提高了輻射復合的效率，使得hb - led的亮度大幅度提高。
  15. The separated phase of blends and carrier injection, transport and decay were firstly investigated by monitoring two different transient el peaks

    首次引入監測基質和雜質兩個瞬態電致峰值來研究低摻雜體系的相分離及載流子注入、遷移和湮滅過程。
  16. Secondly, we demonstrated the possibility of improving electron and hole injection and balance to poly ( phenelene vinylene ) derivatives by replacing oxadiazole segments

    利用空穴傳輸特性ppv鏈段上添加電子傳輸型基團的方法改善了兩種載流子注入和傳輸的平衡。
  17. Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition. the p - type gan was achieved with high hole concentration 8. 2810

    應用mg離子注入mocvd法生長摻雜mg的gan中，在經過800 ， 1h的退火后，獲得高空穴載流子濃度8 . 2810
  18. Conformed by van der pauw hall measurement after annealing at 800 for 1h. this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration

    的p -型gan 。首次報道了實驗上通過mg離子注入到mg生長摻雜的gan中並獲得高的表面空穴載流子濃度。
  19. Abstract : a hybrid algorithm for solving carrier transport equations ofsemiconductor device is presented in this paper

    文摘:針對半導體器件模擬中載流子方程兩種基本演算法在高注入條件下的不足，提出了一種混合演算法。
  20. We can prove theoretically and practically that the hybrid algorithm is superior to couples and de - coupled algorithms in high implantation conditions

    經過理論分析和實際計算表明：這種演算法對求解高注入條件下的載流子方程是有效的。
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