載流子 的英文怎麼說

中文拼音 [zǎiliúzi]
載流子 英文
[固體物理] carrier; charge carrier; current carrier
  • 載 : 載Ⅰ名詞（年） year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  1. The density of carriers in the region has been depleted.

    在這個區內的載流子濃度被消耗殆盡。
  2. The work on the simulation of filter, which was applied to the oled to improve the characteristic of chromatics of emission, was introduced

    有機發光器件的載流子注入、傳輸、復合過程與器件本身的材料、結構、工作電壓密切相關。
  3. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等離子體增強的化學汽相沉積的方法制備了zn3n2薄膜，首次通過熱氧化zn3n2的方法，制備出了受主型載流子濃度為1017cm - 3的p - zno薄膜。
  4. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  5. The former was related to mn doping, both of p - carries supplied by la3 + or oxygen hole and n - carries induced by changing mn4 + into mn3 + can be locally displaced and simultaneously response with external electric field., furthermore due to the overlaps between positive and negative carries. the latter was due to the phase transformation between orthorhombic and cubic, which was in fact the curie point

    前者為la ~ （ 3 + ）和氧空位等產生的p型載流子和mn離子變價引入的n型載流子在外電場下發生局域重排產生的載流子極化，且由於正負載流子的迭加效應所致，該介電峰與mn離子的摻入相關；後者為體系出現相應的正交與立方結構的轉變所致，也即居里點。
  6. Measurement of minority carrier life time in germanium by photoconductive decay method

    用光電導衰減法測定鍺中少數載流子壽命
  7. Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

    硅和鍺體內少數載流子壽命測定光電導衰減法
  8. Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method

    半導體工藝材料的試驗.硅單晶中載流子壽命的測量.用
  9. The lateral diffusion of the photo - carrier in photoconductor layer is one of the important factors of affecting the resolution of lclv

    液晶光閥的解析度與許多因素有關，而光導層光生載流子的橫向擴散則是其中的重要因素之一。
  10. Carries created by ultra - fast laser pulse accelerate in the field of the photoconductor and form a transient photocurrent. the shape of the photocurrent lies on the movement of the carriers, as well as the movement of the carrier ' s lies on the field in the photoconductor

    光電導體中的載流子在光電導體內的運動情況決定了所輸出電脈沖的波形，而載流子的運動是在光電導體內部電場的作用下進行的，所以光電導體內的電場對光電導開關的性能有顯著的影響。
  11. Using a strained si layer as a channel in cmosfet may increase the mobility of carriers and thus enhance the device ’ s performance considerably such as transconductance and cutoff frequency

    在sige虛擬襯底上生長應變si層做器件溝道，將大大增加載流子的遷移率，從而提高器件的跨導和其他性能。
  12. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  13. Firstly, a new interface roughness scattering model is developed using exponential autocovariance functions. the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data

    先推導了一種sic反型層表面粗糙散射的指數模型，研究證明應用此模型能夠更精確地研究sicmos溝道載流子的輸運規律。
  14. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  15. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  16. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  17. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  18. Conductivity type - the type of charge carriers in a wafer, such as “ n - type ” and “ p - type ”

    傳導性（電學方面） -一種關于載流子通過物質難易度的測量指標。
  19. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  20. Carrier drift transistor

    載流子漂移型晶體管
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