輝光放電沉積 的英文怎麼說

中文拼音 [huīguāngfàngdiànchénjī]
輝光放電沉積 英文
glow discharge deposition
  • 輝 : Ⅰ名詞（閃耀的光彩） brightness; splendour; brilliance Ⅱ動詞（照耀） shine
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. In this thesis, a kind of reversible immobilization method based on the plasma - polymerized film ( ppf ) used for effective immobilization of active bio - molecules and easy reproduction of sensors is developed. the surface of quartz crystal microbalance ( qcm ) is firstly prepared with plasma - polymerized film of butyl amine by glow - charge technique and then covered with a negative - charged polyelectrolyte by self - assembling. through strong electrostatic attraction, antibodies ( antigens ) positive - charged are immobilized for the determination of antigens ( antibodies )

    本論文基於等離子體聚合膜，設計了一種既能固定生物活性物質又易於傳感器再生的可逆固定化方法，即採用輝光放電的等離子體沉積技術，先在石英晶體上沉積一層正丁胺等離子體聚合膜，再在膜上自組裝一層帶負電的聚電解質，用以靜電吸附固定抗體（抗原）測定抗原（抗體） 。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. Therefore, the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics. the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge

    創新之處： （ 1 ）提出了雙原子分子轉動分辨發射光譜的擬合方法，並利用擬合方法進行了氮氣直流輝光放電產生的第一負帶轉動分辨光譜和磁控濺射沉積cnx膜過程中cn基團的振動帶的轉動線型擬合，獲得了相應的轉動溫度。
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