輻照器 的英文怎麼說

中文拼音 [fúzhàoqì]
輻照器 英文
irradiation machine
  • 輻 : 名詞（車輪中車轂和輪圈的連接物） spoke
  • 照 : Ⅰ動詞1 （照射） illuminate; light up; shine 2 （反映） reflect; mirror 3 （拍攝） take a picture ...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  1. “ anti - irradiation cover glass for astrospace ” is a protection material for silicon solar battery on space craft

    空間用抗輻照玻璃蓋片是一種用於太空飛行器上硅太陽能電池表面的防護材料。
  2. Beta ray extracorporeal irradiator

    射線體外輻照器
  3. Design of an electron gun in linac for food irradicidation

    輻照食品直線加速器電子槍設計
  4. Physical design of irradiation box on a 300kv electron accelerator

    電子簾加速器輻照箱屏蔽物理設計
  5. The concept of irradiance signal - to - noise ratio ( snr ) on the target plane and the minimum of the irradiance that can be detected by the detector was taken as the beginning, combined with a thorough analysis of the spectrum radiating feature of the target and the sky background, the atmosphere conditions, spectral filtering and the influence that the various components in the system have on the target irradiance on the detector ' s target plane and the background irradiance snr, the equation of the flying bomb ' s effect range affected by the point of burst measuring system is made, and all related factors that have an impact on the effect range are analyzed as well

    從探測器靶面上輻照度信噪比的概念、探測器的可探測輻照度最小值出發，在詳細分析目標、天空背景的光譜輻射特性、大氣條件、光譜濾波技術以及系統各環節對探測器靶面上目標與背景輻照度信噪比的影響的基礎上，推導了炸點測量系統對爆炸的飛行彈體的作用距離方程，分析了影響作用距離的諸因素。
  6. This paper deals with the problem of shielding against electron radiation from the radiation environment of geospace

    摘要該文探討了在地球同步軌道輻照環境下對半導體器件的抗輻射屏蔽間題。
  7. Forms - radioactive substances and irradiating apparatus

    表格-放射性物質及輻照儀器
  8. A method of beam control for nfz - 10 industrial irradiation linac

    10工業輻照電子直線加速器束流控制方法
  9. 12mev 4. 2kw electron linear accelerator irradiationapplication

    電子直線加速器的輻照應用
  10. Solar total irradiance monitor ( stim ) is a remote sensor on the fengyun - 3 satellite. the stim is used to measure the solar irradiance

    太陽輻照度監測儀是風雲三號氣象衛星上的一個遙感儀器，它的主要任務是監測太陽輻照度的變化。
  11. It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad

    當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。
  12. Some phenomena were observed when the hgcdte ( pc, pv ) detectors were irradiated by off - band cw co _ ( 2 ) laser which are much different from that when irradiated by in - band light. the irradiation of the off - band light can have a very strong disturbing effect on the detectors. a one - dimensional model is employed to do some work of qualitative and quantitative analysis for the experimental results

    以波長為10 . 6 m的co _ 2激光為光源，進行hgcdte （ pc 、 pv ）光電探測器的激光輻照實驗研究，發現探測器對于波段外輻照激光的響應與其對波段內輻照激光的響應大不相同，這種波段外激光的輻照足以對探測器造成很強的干擾。
  13. The results are as follows : the target and background irradiance snr on the detector ' s are greater than the minimum snr on a 40 - kilometer distance ; the target irradiance on the detector ' s target plane can comply with the minimum irradiance that is not beyond the capability of the detector ; the system effect range from the experiment data can satisfy this index

    結果表明40km距離處，目標與背景在光電探測器上的輻照度信噪比大於可探測最小信噪比；目標在探測器靶面上的輻照度滿足探測器所能探測到的輻照度最小值；實驗數據上推導出系統的作用距離能達到這一指標。
  14. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  15. After 40 hour irradiation time, about 7 ci of radioactive isotope 64cu was produced via 63cu ( n, y ) 64cu reaction. after simple disposal, the irradiated copper sample was installed in the high - intesity ion sputter source on the hi - 13 tandem accelerator. then 64cu ions extracted from the high - intesity ion sputter source and injected into the tandem accelerator, 64cu ions can be accelerated to an energy of 80 mev and formed the off - line rnb since natural

    S ）的熱中於通量下，經過34個半衰期輻照，通過『 u … ， y ）生成放射性l司位素『 cll ，然後將放射性銅靶錐注入串列加速器強流濺射離于源中，引出mcll負離于，經刁串列加速器加速而得到能量為80mcv的離線放射性核束「 cll叭。
  16. Radioactive substances and irradiating apparatus

    放射性物質及輻照儀器
  17. Application for exemption from requiring irradiating apparatus licence

    豁免輻照儀器牌照申請
  18. Use of irradiating apparatus for teaching purposes in schools

    -于學校使用輻照儀器作教學用途
  19. Application for irradiating apparatus licence

    申請輻照儀器牌照
  20. With its unique structure, silicon - on - insulator ( soi ) has been found great potential in integrated circuits, where lower power consumption and high speed are required, as well as in radiation hardened circuits and high temperature devices

    絕緣體上的硅（ soi ）技術以其獨特的結構在低壓、低功耗電路，高溫、抗輻照器件以及集成光電子器件方面有著廣泛的應用。
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