退火室 的英文怎麼說

中文拼音 [tuìhuǒshì]
退火室 英文
annealing chamber
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. It was armed with the 105mm k 18 l 52 krupp. the gun was equipped with a muzzle brake with double - deflector this weapon could penetrate 111 mm of shielding under a vertical angle of 30 degrees to 2000 meters

    它裝備一門52倍徑的105毫米k18火炮，炮口裝有一個雙室制退器，在2000米外能擊穿30度傾角， 111毫米的均質軋制裝甲。
  2. Low cycle fatigue ( lcf ) behavior of zircaloy - 4 has been reviewed in the present paper. then, the lcf behavior of a recrystallized zircaloy - 4 plate with different texture has been studied at room temperature and 400, respectively

    並在此基礎上，研究了不同溫度（室溫和400 ） 、不同取向（平行於軋向和垂直於軋向）的再結晶退火態zr - 4合金板材試樣的低周疲勞性能。
  3. Standard specification for maximum permissible thermal residual stress in annealed glass laboratory apparatus

    在退火的玻璃實驗室器皿中最大容許熱殘留應力
  4. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  5. The resistivity of the films drops compared with the as - grown films, but the temperature of maximum magnetoresistance reaches 287k, very close to the room temperature. therefore it is not only an important improvement to fabricate the cmr bolometer which can work near room temperature, but also a prospective research for other applications such as magnetic - sensors, spintronics devices and infrared detectors

    同時，退火后薄膜的電阻率明顯下降，外加5t磁場時，最大磁電阻率溫度點上升到287k ，接近於室溫，這不僅為製作室溫超巨磁電阻測輻射熱儀打下了堅實的基礎，也為其它許多器件的應用提供了可能。
  6. The tbzre glass has great forming ability, which can form glassy body under relative slow cooling ratio. moreover, the technique of glass ' s annealing is easy. the npre - 1 glass has strong viscosity

    其中亞碲酸鹽玻璃（ tbzre ）成玻能力強，在較慢的冷卻速率下也能得到非晶玻璃；且退火工藝簡單，退火溫度下保持一小時后再冷卻到室溫即可。
  7. By sims method, we analyzed the profile distribution of mn and c, found that increasing the annealing temperature is beneficial to the diffusion of mn, but has no influence to c. mfm and squid measurements demonstrate that sub micron single - domain magnetic mnas particles found in sample annealing at 850 for 15s show ferromagnetism at room temperature and have a high curie temperature more than 300k

    利用二次離子質譜方法對mn和c在樣品中的分佈進行了研究，發現退火溫度的上升，有利於mn的擴散；而對c的分佈影響較小。利用磁力顯微鏡和超導量子干涉儀對樣品的磁性質進行了研究。發現在850 + 15s退火處理的樣品中形成了亞微米級單疇磁性mnas粒子；經測試其在室溫下呈現出鐵磁性，居里溫度在300k以上。
  8. Quantum confinement effects of semiconductor nanocrystals cdsaiseo9 in glass abstract a series of cds0. iseo. 9 semiconductor nanocrystals embedded in silicate glass with different sizes have been fabricated by one - step and two - step annealing methods. the electronic state and optical properties of these nanocrystals also have been studied through room - temperature absorption spectra and electroabsorption spectra

    本文用一步退火和兩步退火方法在玻璃基體中生長了一系列不同尺寸的cds _ （ 0 . 1 ） se _ （ 0 . 9 ）半導體納米晶體。對制備的納晶樣品作了室溫吸收光譜和電調制吸收光譜的測量，以此研究了納晶的電子結構及光學性質。
  9. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  10. Two different growth methods are used to prepare ultra - thin hflayers on si ( 001 ) substrate for the purpose of studying the initial stage of the hafniuin / si ( 001 ) interface formation

    5單層hf原子于a （ 001 ）襯底，並繼之以最高至650的退火。上述測量結果表明hf在ao ）的室溫淀積模式是所謂的層層生長模式。
  11. The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature

    制備plzt電光薄膜的最佳工藝參數為:襯底溫度400 ，濺射功率100w ，氧氬比為1 : 6 ，退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯底溫度室溫、濺射功率200w 、氧氬比為1 : 2 、退火溫度為600 。
  12. In order to improve the accuracy of artillery fire corrections, this essay, having been integrated with the project " research on how to determine the muzzle velocity reduction of the piece " issued by the arms department of the general staff headquarters of pla, deals with a new method of measuring the muzzle velocity reduction of the piece

    部隊測定火炮初速減退量的傳統方法是藥室增長量法。該方法已不能滿足現代炮兵精確火力打擊要求。為提高炮兵射擊修正精度，本文結合總參兵種部下達的「確定火炮初速減退量方法研究」項目，研究了一種測定火炮初速減退量的新方法。
  13. Zn0. 6 ni0. 4 fe2o4 soft ferrite has been prepared by shs in his paper. the sem and xrd has been studied for zno. 6 ni0. 4 fe2o4 annealed in different temperature and time

    通過對比退火產物的xrd和sem圖譜，確定了最佳的退火工藝： 300 h的升溫速率到1100 ，保溫2h ，隨爐冷卻到室溫。
  14. When irradiation response and dose are linear, total dose radiation and post - irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory

    研究結果表明，輻射響應與吸收劑量成線性關系時，在實驗室選用任一特定劑量率進行總劑量輻射和輻照后室溫退火，可以通過線性響應理論模擬其它劑量率輻射下的總劑量效應。
  15. 2. from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented. the following results can be extracted

    2鉺硅（ 001 ）界面、表面及鉺硅化物最初形成過程研究首先利用同步輻射光電子能譜方法研究了室溫下鉺在硅（ 001 ）表面的淀積和退火過程。
  16. Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

    發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。
  17. Ni ohmic contacts fabricated by traditional evaporation and thermal annealing on temperature of about 1000 have lower contacts resistances. the testing result on 400 does n ' t show it can keep thermal stability

    按常規方法鍍鎳（ ni ）並經1000左右高溫退火得到的歐姆接觸具有更低的室溫比接觸電阻，但400高溫歐姆特性測試表明其熱穩定性不夠好。
  18. In order to accomplish the main targets, the following jobs were done : the annealing of ct20 alloy tube at 6 different temperatures was carried out and the specimens with different microstructure were tested at room temperature ( rt ) and 20k. the tensile fractures were analyzed by means of sem and tem. the c t20a alloy specimens with 3 kind of oxygen equivalent ( oeq ) were prepared, and the tensile properties at rt and 20k, the impact toughness at rt and 77k were tested

    為了研究顯微組織和間隙元素含量變化對兩種合金低溫塑韌性的影響，研究中主要作了如下工作：對ct20合金管材進行了六種溫度的退火處理，測試了不同組織試樣的室溫和20k拉伸性能，對拉伸試樣取樣進行sem和tem分析；制備出了ct20a合金三種氧當量實驗樣品，測試了相應試樣的室溫和20k拉伸性能以及室溫和77k沖擊性能，並取樣進行sem和tem分析；在以上工作的基礎上，對近鈦合金的低溫塑韌性機理進行了探討。
  19. But different from bipolar transistors, some of them show that the lower the radiation dose rate was applied, the less the devices were damaged, and the damage induced by high dose rate irradiation can be eliminated by a long time anneling at room temperature

    有些電路雖有不同劑量率的輻照損傷差異，但這種差異可通過室溫退火得到消除，因而只是時間相關的效應。
  20. If all escape routes are blocked, retreat back indoor. use lights, swinging clothes, or shouting to send help signals to the outside and wait for help

    若所有逃生線路被大火封鎖，要立即退回室內，用打手電筒、揮舞衣物、呼叫等方式向窗外發送求救信號，等待救援。
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