退火材料 的英文怎麼說

中文拼音 [tuìhuǒcáiliào]
退火材料 英文
annealed material
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 退火 : [冶金學] anneal; annealing; back-out
  • 材料 : 1. （原料） material 2. （資料） data; material 3. （適于做某種事的人才） makings; stuff
  1. Based on the project imbrued especially by hunan province construction office, the study of this paper includes four parts as follows : the first part does some simplify on the characters of the rc material under high temperature. after transferring the rc section under fire to equivalent one at normal temperature based on the stiffness and intensity equivalent, the rc members under fire can be calculated as ones at normal temperature

    主要研究內容如下: （ 1 ）基於剛度等效或強度等效原則，根據截面各點材料力學性能的退化，把受火鋼筋混凝土非均勻截面等效成常溫下的鋼筋混凝土截面，使得高溫下構件剛度和強度的計算可按常溫下的計算理論進行。
  2. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通過直接擠壓混合后加熱反應，得到的無定型球狀碳材料經tem照片證實直徑為50 - 100納米，而且中間包裹氯化鈉（ nacl ）顆粒； xrd等結果顯示，高溫退火併徹底清除nacl后形成的中空碳球已經部分石墨化。
  3. To make quality professional metalwork, the factory has equipped itself with high - class means of inspection and high - caliber management personnel and followed the iso9000 quality standard in sorting, melting, pressing, pulling, etc

    鄺邊金屬製品廠為製造品質優良的專業金屬，在原料選配熔煉、鑄造、擠壓、拉伸、退火、酸洗、聯合拉? 、精磨等工序，配備一流的檢查手段，高素質的管理人員，結合iso9000品質管理標準，確保鄺邊銅材品質優良。
  4. Etc. heaters mosi2, sic for annealing furnace and single crystal furnace, high purity oxides high purity rear earth oxides, sio2, al2o3, tio2, ti2o3 and ti3o5 etc. for crystal growth and optical coatings. w, mo crucibles and w, mo products for crystal growth, fire - resistant materials and products for heat isolating during crystal growth

    Etc . ，退火爐及單晶爐用發熱體硅化鉬，炭化硅，晶體生長和光學鍍膜用高純氧化物稀土氧化物，二氧化硅，三氧化鋁，二氧化鈦，三氧化二鈦，五氧化三鈦等，生長晶體用鎢鉬坩堝及鎢鉬製品和保溫用各種耐火材料及製品。
  5. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  6. Cold rolled, bright annealed and skin - passed, the product has excellent brightness and good reflexivi ty like mirror, used for lectrical appliances, mirror, kitch en apparatus, ornament materials etc

    經冷軋后施以光亮退火，並經過平整得到的產品。表面光澤度極好，有很高的反射率。如同鏡面的表面。用於家電產品、鏡子、廚房設備、裝飾材料等。
  7. The nano - bulk al should be kept more man 30 minutes at temperature no more than 300 to annealed which is much lower than that of ordinary aluminum materials

    對納米鋁塊體材料的退火實驗表明，模壓成形的鋁塊體材料的退火溫度（ 300 ）比常規的鋁材（ 400 ）要低，退火保溫時間應在30分鐘以上。
  8. The results proved that : ( 1 ) because of the material ' s difference of primer - 9 and primer - 5, the maximum stress of primer - 5 is larger than primer - 9 but the maximum displacement is smaller than primer - 9. ( 2 ) because of the unrenewable shape changing of primer - 9 after impacting by the pin, it will cracking under high pressure more easily. so, the paper give the suggestion that the designer should decrease the depth of impacting by pin in the case of the primer be fired successfully

    對底- 9底火、底部被擊針撞擊后的第- 9底火和底- 5底火在膛壓作用下分別進行了有限元數值分析，計算表明： （ 1 ）底- 5底火底部擊針撞擊部位為火帽座，其材料為鋼帶，底- 9底部承受撞擊部位為底火體，其材料為冷拉退火圓鋼，由於材料強度不同，承受壓力能力和變形能力不同：雖然在膛壓作用過程中底- 5底火的最大應力值比底- 9底火的大，但底- 5底火的最大位移量卻比底- 9底火的小得多。
  9. Shenyang alloy material co., ltd. ’ s transferring item is one of the important transforming items for us, which has approved by national financial department by means of using japan ' s loan, the importance of item includes the advanced half continual vacuum melting furnace 、 simultaneous x - ray spectrometer system 、 fluorescent analyzed instruments ; advanced annealed furnace 、 vacuum annealed furnace and other heat treated furnish etc ， and others totally 50 types

    沈陽合金材料有限公司的搬遷改造項目是國家發改委和財政部批準的國家利用日元貸款改造重點項目之一，項目重點改造內容有引進國外最先進的半連續真空感應熔煉爐、 x熒光分析儀、直讀光譜儀；國內先進的罩式退火爐、真空退火爐等熱處理設備及一些冷加工設備，共增添新設備五十多臺套。
  10. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  11. Preparation of semi - insulating material by annealing undoped inp

    高溫退火非摻雜磷化銦制備半絕緣材料
  12. A well-annealed material may require many days of contact with water.

    一個經過很好退火的材料需要與水接觸許多天。
  13. The cmr materials have complex physical properties. some phenomena of the lacamno3 films are discussed, such as the effects of mismatch between the substrates and the films, the variation of the resistance of films under different bias currents. and the effects and improvements are discussed with details after the films are annealed in high temperature and high oxygen pressure

    超巨磁電阻材料有著復雜的物理性質，我們對lacamno _ 3薄膜材料所表現出來的一些現象進行了討論，如應力變化對薄膜性質的影響、不同偏置電流與薄膜電阻變化的關系等，還特別討論了薄膜在高溫、高氧壓環境中退火所帶來的影響以及薄膜性質的改善。
  14. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  15. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  16. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  17. Gas producer is widely used in forging, smeltingmetallurgical, heat treatment and drying equipment industryetc. suchas ： glass fumace, linme kiln, pottery kiln enamel, scouring pui kilns, chemical and refractory kiln, ferrosili - cin calcium carbide fumace and annealingkiln, etc

    煤氣發生爐廣泛用於鍛造、熔煉、冶金、化工、熱處理、烘乾設備等行業，如：玻璃爐窯、石灰窯、陶瓷窯搪瓷、精煉培燒窯、化工和耐火材料窯、硅鐵電石爐、退火窯等。
  18. Bell type furnace is mainly used to steel strips, steel plantes, copper strips, copper plates and other metal parts for bright anneal and normal anneal heat treatments. according to the technics, the process of preevacuation. heating, protecting atmosphere gew or non oxidation heating, air cooling, fast colling and slow cooling treaments can be executed

    罩式爐主要是用於鋼帶、鋼盤圓、銅帶、銅盤圓及其它金屬材料及零件的光亮退火和一般退火工藝，根據熱處理工藝的要求，可對熱處理工件進行預抽真空、加熱、保護氣氛少無氧化加熱、空冷、快冷及緩冷處理。
  19. In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process

    本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。
  20. Mathematical model for the annealing of fused cast al2o3 refractory

    3系耐火材料退火過程數學模型
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