逆向擴散 的英文怎麼說
中文拼音 [nìxiàngkuòsǎn]
逆向擴散
英文
back diffusion-
The intervarietal crossing has taken place in low frequency when the two varieties are sympatric. 5
二者逆向擴散,在同域分佈時,以低頻率發生變種間雜交。Based on the theory of technical innovation and technical innovation diffusion elaborated, as well as fluxionary calculus and game theory, the thesis analyses corporation adoption with game theory in the process of technical innovation diffusion : analyzes in the situation of information symmetry and information asymmetry the gambling between the supplies and the latent users of innovation, discusses the mechanism of the phenomenon " reversion choice " with emphasis in the situation of information asymmetry, and also introduces signal transmission model and information screen model to realize pareto improvement ; at the same time it analyzes in the situation of complete rationality and limited rationality the gambling between the latent users of innovation
依據已闡述的技術創新和技術創新擴散理論,以及微積分、博弈論等相關理論,對技術創新擴散中企業採用行為進行了博弈分析:分析了信息對稱和信息不對稱情況下創新供給者與創新潛在採用企業之間的博弈,重點討論了信息不對稱時「逆向選擇」現象發生的機理,並引入信號傳遞模型和信息甄別模型以實現帕累托改進;同時分析了完全理性和有限理性情況下創新潛在採用企業間的博弈。Let the student through teacher ' s explanation, the practice activity and the mutual discussion becomes aware the truth and the method, raises student ' s proliferation thought that to ask different innovative idea abilities and so on thought that negative thinking, achieves “ an study “ rom “ he academic society “ he educational goal finally
讓學生通過教師的講解、實踐的活動和相互的討論悟出道理和方法,培養學生的擴散思維、求異思維、逆向思維等創新思維能力,最終實現由"學會"到"會學"的教育目標。Firstly we investigated the flow field and temperature field of diffusion fuel. when the direction of centrifugal force as same as the velocity of flow, there is a circumfluence of anti - clockwise
首先研究了擴散燃燒時的流場和溫度場。當離心力的方向與流速方向相同時,流場有一個逆時針方向的迴流區。In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數,在單晶硅襯底上濺射-淀積了tini薄膜,並進行了超高真空退火, dsc法測得其馬氏體逆相變峰值溫度為72 ,利用能譜分析( eds )技術測得其ti含量約為51at ,通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射( xrd )分析,發現在用大功率( 2000w )直流磁控濺射法制備tini薄膜過程中,存在ti 、 ni與si的雙向擴散,發生了界面反應,並有三元化合物ni _ 3ti _ 2si生成。分享友人