遷移率比 的英文怎麼說

中文拼音 [qiānyílǜbǐ]
遷移率比 英文
mobility ratio
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 比 : Ⅰ動詞1 （比較; 較量高下、 長短、距離、好壞等） compare; compete; contrast; match; emulate 2 （比...
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  2. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  3. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  4. Such a model will ensure the existence of this species in this area. 4. the comparison of the biochemical contents between subitaneous and diapause eggs the dry weight and the contents of each biochemical components in a diapause egg were all more than the ones in a subitaneous egg ; the comparatively content of lipid in t

    Sns一獄ge圖譜中滯育卵有10條蛋白質條帶與正常卵的遷移率不同，主要分佈在分子量為71 . 52一102 . 16kd范圍內;產滯育卵的雌體比產正常卵的雌體多了一條分子量為74 . 26kd的蛋白質條帶。
  5. Circulation for transferring record then, based on the above limitations, this paper proposes a dynamic load balancing method. through the simulation of the change over time of the traffic of customer data, it draws a comparison in the deviation of the change over time of the traffic in a certain sdm ( service data module ) with respect to that of the average traffic of all modules between old method and new method. the load imbalance ratio, the number of records transferred per unit time and the reduction of number of modules are evaluated

    本論文針對上述兩個問題，提出一種改進的負載平衡方法，通過對用戶數據流量隨時間變化的模擬，比較了記錄遷移方法改進前後每一模塊的流量變化與所有模塊平均流量變化的趨近程度，同時還對幾個重要參數：模塊數量縮減率、負載不平衡比和單位時間內記錄遷移數量，它們之間的關系進行討論，得出改進后的記錄遷移方法能夠達到動態平衡負載的效果。
  6. In general, organic semiconductors have lower mobility than their inorganic counterparts do, resulting in slower switching speeds

    一般說來，有機半導體的遷移率比無機半導體的來得低，這使得開關的速度較慢。
  7. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  8. Pure cdte films have high electrical resistivity and are slightly p - type, due to the formation of cd vacancies in the cdte lattice acting as acceptor centers. the sheet resistivity of films are about 1010 ? / ?. the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v. s. the structural and electrical properties of cdte films doped te are markedly different from pure cdte films

    ，面載流子濃度約105 - 6 / cm2 ，載流子遷移率為幾百cm2 / v . s ；摻雜te元素后，薄膜衍射峰強增大，薄膜結構上出現了第二種相成分?六方結構的te ，由衍射峰強判斷該相比例較小，同時cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常數增大。
  9. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。
  10. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  11. Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor

    而霍耳系數取決於半導體材料中電子濃度和空穴濃度的相對大小及其遷移率之比。
  12. From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48. 5 % improvement in the strained si layer

    通過比較實驗我們可以獲知，應變si材料中的電子遷移率相比于體si材料最大可有48 . 5 %的提高，而應變sige材料中的空穴遷移率相比于體si材料可有近15 %的提高。
  13. The recent development of organic electron transport materials are reviewed as well. several technologies for charge carrier mobility measurement are summarized and compared, and a series of basic principles for designing high - performance organic electron transport materials are suggested as well

    本章還重點綜述了有機電子傳輸材料研究的最新進展，總結和比較了有機材料載流子遷移率的測試方法，並提出了設計高性能有機電子傳輸材料的若干原則。
  14. The dissertation reveals the major motive of migration is to pursue greater return of human capital. 3. the dissertation points out that the non - equilibrium migration results in the rise of production cost of agro products

    當人口遷移失衡時，由於匯款小於等於邊際產出，對于留剩人口群體而臺一，是資本的凈支出，農村耕地的資本一耕地比率下降，農村經濟陷入了惡性循環。
  15. Compared with traditional approaches based on standard labelled transition system ( lts ), stga preserves important structural information which has a great impact on test sequence selection. as a consequence, the stga - based method has significant advantage in test sequence selection

    與傳統的基於標號：遷移系統lts的方法相比， stga中保留了對測試同步序列的選取有重要影響的結構信息，因此有利於高效率同步序列的選取。
  16. The land assignment insufficiency, lives contentedly in one place with little inclination to moveelsewhere the idea influence, the land salinization which the plundering cultivation way causes and so on, causes the immigrant to return moves the ratio to be higher

    土地分配不足，安土重遷觀念的影響，掠奪性耕作方式導致的土地鹽堿化等，使移民返遷比率較高。
  17. Firstly, we make a simple introduction to the credit risk and its risk measuring criteria. and after deciding the measuring criteria, we study the transition of credit risk under guarantee

    選擇違約概率為衡量標準，對貸款信用風險在有無擔保貸款方式下的信用風險遷移進行具體的分析、比較、論證。
  18. It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states

    明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同，並給出了以上二者的比值與界面態密度的定量關系。
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