遷移電流 的英文怎麼說

中文拼音 [qiānyídiànliú]
遷移電流 英文
migration current
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  2. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  3. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  4. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。
  5. The filled skutterudite compounds attract aboard attention owing to their high mobilities and relatively large seebeck coefficients in the middle temperature range of 600 - 800k. but their thermal conductivities are very high, so the problem how to decrease their lattice thermal conductivities and improve their zt values becomes a research hotspot

    填充式skutterudite化合物由於在中溫領域（ 600 800k ）具有很高的載流子遷移率和較大的seebeck系數而引起人們的廣泛關注；但其熱導率k較高，因而如何降低晶格熱導率kl ，提高其熱電性能指數zt值已成為研究的熱點。
  6. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  7. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  8. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  9. As an electric current passes through, the joule heating and electromigration effects occur in the flip chip solder bumps

    當電流通過焊點時，會伴隨產生焦耳熱效應和電遷移效應。
  10. About the techniques of the reliability design, a common method for 1c reliability design is introduced and the failure principles of electronmigration are studie d

    在可靠性設計方面，介紹了集成電路可靠性設計的一般方法。影響鋁互連的電遷移失效的各種因素中，電流密度是主導因素。
  11. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  12. The major advisory services completed in recent 3 years are as follows ( 1 ) " study on comprehensive benefits of the three gorge project " ( main participator ), which was the key project ofthe seventh five - year plan of the state and won the first - grade prize for outstanding achievemetn in scence and technolog awarded by the state science and technology committee ; ( 2 ) " cause analysis and countermeasure study about investment over - estimation of water project ; ( 3 ) " research on modermization of water conservancy " ( 4 ) " investigation of water price system of yellow river basin / ; ( 2 ) - ( 4 ) are the key projects of the ministr of water resources p. r. c. person in charge ( 5 ) " assets evaluation and compensation investment calculation for 41 inundated enterprises in the theree gorge reservoir area " ( 6 ) ' proitive analysis of regional economic developetn and port construction of jiansu province " ; ( 7 ) " surpervision for resettlement adn rehabilitation of dahe reservoir in guangdong province " ( person in charge ) and so on

    近三年業主要從事的重大咨詢業務有： 1 .作為主要參加者承擔完成國家『七五』重點攻關項目「三峽工程綜合效益研究」 ，獲國家科委科技進步獎一等獎；主持完成水利部重點項目： 2 . 「水利水電工程投資超概算成因分析及對策研究」 、 3 . 「現代化水利研究」和4 . 「黃河流域水價制度研究」 ；作為技術及外業負責人先後完成了： 5 . 「三峽庫區受淹企業資產評估及補償投資計算」 、 6 . 「江蘇省區域經濟發展與港口開發的實證分析」與7 . 「廣東省大河水庫移民遷移安置監理」等咨詢業務。
  13. We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation. in general, hydrogenation is prepared after completing of tft, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise

    而通過氫化可以大大降低多晶硅薄膜晶粒邊界中的懸掛鍵和界面陷阱，從而顯著提高tft的場效應遷移率和開態電流，減少關態電流，提高tft的電學性能。
  14. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  15. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  16. Carrier will be capture by trap, the number of electric carrier will decrease. the trap hold back carrier to move from crystal to other crystal. it influences the electrical properties of tft

    陷阱在浮獲載流子之前是電中性的，但是在俘獲載流子之後就帶電了，在其周圍形成一個多子勢區，阻擋載流子從一個晶粒向另一個晶粒運動，導致載流子遷移率下降，導致tft的電學性能下降。
  17. This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters

    本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密度和分佈情況以及它們對襯底電參數（電阻率、遷移率、載流子濃度）的影響。
  18. But the comprehensive properties were improved remarkably. with the addition of carbon nanotubes, the polarization of charging process decreased, the plateau of discharge became flatter and the migration of potential of peaks value of cyclic voltemmograms reduced. for the other hand, the exchange current increased, ohm resistance and electrochemical reaction resistance of the electrodes decreased, the diffusion resistance of hydrogen and the resistance of adsorption decreased, too

    摻入碳納米管對儲氫合金電極的容量影響較小，但其電化學性能卻有較大的改善，主要體現在：充電的極化減小，放電平臺更加平穩、循環伏安曲線的峰值電位隨掃描速度增大的遷移量減小，交換電流密度增大，電極的歐姆電阻、電化學反應、擴散電阻和吸附電阻均減小。
  19. Finally, after the long - term ion migration test, we analyzed the relation between the current and accumulative charge with the test time, computed the ion mobility and migration distance, and analyzed the distribution variety of na + and k + in the test samples

    對10支試品進行了長期離子遷移試驗，測量了泄漏電流曲線和累計電荷量隨時間變化曲線，計算了試品的離子遷移率和遷移距離，並對試品na ~ + 、 k ~ +的含量進行了化學分析。
  20. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
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