選擇蝕刻 的英文怎麼說
中文拼音 [xuǎnzháishíkè]
選擇蝕刻
英文
selective etching-
In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask
在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。The selective etching of the evaporated or squeezed layers is a critical step in preserving yield.
蒸發層和濺射層的選擇刻蝕是保證成品的關鍵步驟。By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。The optimizing methods of main etching parameters, such as etching rate, uniformity and selectivity, were investigated by the orthogonal experiment, and these results can be used for setting main process parameters, adjusting them with a drifting from desired conditions, and optimizing etching selectivity
應用正交實驗，進行了蝕刻速率、均勻性、選擇比等主要蝕刻參數的優化，得出主要工藝參數的設置方法和理想條件漂移時的調整方法以及優化選擇比的蝕刻方案。Through the analysis, it is shown that : 1, while fabricating the grating, the principle of selecting the parameters is : the period should be as large as possible, the etching depth should be small and filling factor should approach to 0. 25. 2, if selecting the parameter combine the selecting principle and the requirement of concrete application, the space of selecting the parameter should be larger than before. 3, while the period to. 4a, the surface profile has no effect on the reflectivity
通過分析發現： 1 、在製作有一定特性的光柵時，光柵參數的選擇原則為：周期的取值應盡量的大，刻蝕深度的取值應盡量的小，占空比的取值應盡量靠近f = 0 . 25 ； 2 、以參數的選擇原則結合製作的具體應用要求宋選擇光柵的參數，則各個參數的優化空間更大； 3 、當光柵的周期t 0 . 4時，表面面形對反射率沒有影響； 4 、運用臨界周期點隨折射率的變化規律，可以避免由於選擇光柵周期過大而出現一級衍射，從而導致製作失敗。All these has provided us with scientific basis for designing the chamber of icp etching system and selecting the appropriate etching samples
這些結論為設計icp刻蝕系統的反應室、選擇合適的刻蝕工藝提供了科學的根據。分享友人