金屬效應元件 的英文怎麼說

中文拼音 [jīnzhǔxiàoyīngyuánjiàn]
金屬效應元件 英文
metal response element
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 屬 : 屬名詞1 （類別） category 2 [生物學] （生物分類系統上所用的等級之一） genus 3 （家屬; 親屬） fami...
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 金屬 : metal
  • 效應 : [物理學] effect; action; influence
  1. However, the die attach layer delaminated after 500 cycles and pcb cracked in the underfilled samples after long time cycling. c - sam is employed to investigate the delamination in the underfilled samples. highly concentrated stress - strain induced by the cte mismatch between the bga component and the pcb board, coarsened grain and two kinds of intermetallic compounds ( nisn / nisns ) which formed during reflow and thermal cycle and their impact on the reliability of solder joints are discussed in this paper

    充膠樣品粗化尤為嚴重； ? ni - sn金屬間化合物包括兩層：其中，靠近ni焊盤的那層比較平整，同時， eds結果分析表明其化學式近似為nisn ，而靠近焊料的那層呈板條狀，化學式近似為nisn _ 3 ，文獻表明其為亞穩相； ?充膠使得樣品最大應力范圍降了接近一個數量級並降低了dnp的作用，同時，器件失效模式變為晶元粘接層分層； ? c - sam結果表明本論文採用的充膠樣品，晶元粘接層分層起始於500周左右，而經過2700周循環的樣品，分層幾乎擴展到整個界面。
  2. The study was undertaken to isolate fe ( ii ) - transporter cdna and related binding protein cdna under fe - deficiency stress from a fe - deficiency root cdna expression library of malus xiaojinensis by screening library using maize fe ( ii ) - transporter cdna and wheat tamre - bp cdna as a probe. the main results as follows : 1 out of approximately 120000 plaques, four positive cdna clones encoding fe ( ii ) - transporter proteins, designated pftl -

    本試驗以蘋果屬小金海棠（ malusxiaojinensischengetjiang ）為試材，利用玉米fe （ ）轉運蛋白基因片段以及小麥金屬反應元件結合蛋白tamre - bpcdna為探針，篩選小金海棠缺鐵根cdna表達文庫，目的在於克隆蘋果鐵高效基因型小金海棠的fe （ ）轉運蛋白基因以及與缺鐵脅迫相關的結合蛋白基因。
  3. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
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