鍺單晶 的英文怎麼說

中文拼音 [zhědānjīng]
鍺單晶 英文
germanium single crystal
  • 鍺 : 名詞[化學] （金屬元素） germanium （ge）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  1. Abstract : in view of the crystal structure, this paper repo rts thecharacter of single crystal growth of germanate and the properties as me dium of laser crystal. the study and progress in germanate crystals used as widel y tunable laser crystal, self - doubling - frequency crystal and highly efficient and low pumping threshold laser crystal are introduced

    文摘:從晶體結構上分析了鍺酸鹽的單晶生長和作為激光晶體基質的特點，並介紹了鍺酸鹽作為可調諧激光晶體，自倍頻晶體，高轉換效率和低泵浦閾值的激光晶體的研究及進展。
  2. In this paper the band - gaps of the different concentration ge - doped czsi were measured, and the band - gap numbers were gotten

    論文中對硅鍺單晶的光學禁帶寬度進行了測試，得出了摻鍺不同濃度下禁帶寬度值。
  3. Germanium monocrystal - inspection of dislocation etch pit density

    鍺單晶位錯腐蝕坑密度測量方法
  4. Monocrystalline germanium slices

    鍺單晶片
  5. The images of the single crystals with different ge concentration were gotten by means of afm method. the atomic layer patterns of different crystals were gotten

    利用原子力顯微鏡（ afm ）對不同鍺濃度的硅鍺單晶的形貌進行了觀察，得到了不同單晶的原子層形貌。
  6. In this paper, germanium concentration in ge - dopped silicon bulk single crystals was measured by the methods of indution couple plasma ( icp ) direct reading spectrometer, sims, sem - edx, and the effective segregation coefficent of germanium under the situation of the changed speed was calculated, the result was 0. 62. according to the result, the curves of different ge concentrations were got

    本論文利用二次離子質譜（ sims ） 、化學分析法（電感耦合等離子體（ icp ）直讀光譜儀） 、掃描電鏡能譜儀（ sem - edx ）三種方法對不同摻鍺濃度的czsige單晶中鍺含量進行了測試，並對變速拉晶條件下鍺的有效分凝系數進行了計算，得出鍺的有效分凝系數（ ke ）為0 . 62 。
  7. With the film thickness, which was determined using transmission electron microscopy ( tem ), and the known material number density ( since the film is epitaxial on silicon, the number density is the same as in silicon crystals ), this determines the ge concentration

    由通過隧道電鏡（ tem ）決定的膜厚和已知材料的密度（因為薄膜為硅上外延，密度與硅單晶相同） ，決定了鍺的濃度。
  8. The results indicated that when the concentration of ge - doped was lower than lwt %, the ftir spectroscopy was nearly the same as that of czsi, but with the concentration of ge - doped increasing, in the spectroscopes of the lower wave number of near 710 cm - 1, there appeared a new peak

    利用ftir法測得了不同鍺濃度單晶中的氧碳含量，並對其譜圖進行了研究，得出：在譜圖的低波數端隨鍺濃度的提高（ 710cm ~ （ - 1 ）附近）出現了新的譜峰。
  9. Determination method for interstitial atomic oxygen content of germanium by infrared abaorption

    鍺單晶體中間隙氧含量的紅外吸收測定方法
  10. Properties and processing technology of ge single crystal

    鍺金屬單晶材料性能及加工技術研究
分享友人
分享到 Line

分享到臉書