鎵的 的英文怎麼說
中文拼音 [jiāde]-
High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc
高純度金屬鎵是生產化合物半導體材料的基礎材料,同時它還可以用於生產超導材料、合金材料、永磁材料等。Test method for ga as ratio of surface of gallium arsenide
砷化鎵表面鎵砷比的測試方法Test method for thermal stability testing of gallium arsenide wafers
砷化鎵晶片熱穩定性的試驗方法Gallium arsenide single crystal - determination of dislocation density
砷化鎵單晶位錯密度的測量方法Meaning you could take a simple aluminum gallium arsenide laser and -
也就是說,只要拿一個簡單的砷化鋁鎵激光器和Hcl buffer solution at ph 5. 5, a sensitive adsorptive complex wave of in - lumogallion was obtained by single - sweep polarography. the change of peak height with the concentration of indium is linear in the range from 1. 0 10
- hcl底液中可獲得銦-熒光鎵體系靈敏的絡合吸附波。測定銦的線性范圍為1 . 010Gaas solution for cable tv network upgrade
為電纜電視網路系統改造提供的砷化鎵方案二Study on the recovery of gallium using modified meerschaum
改性海泡石吸附分離鎵的研究Study on technology of gallium immersion and digestion in bauxite ore
鋁土礦中鎵的浸取工藝研究Method for determination of gallium in aluminium and aluminium alloys
鋁和鋁合金中鎵的測定方法Based on the energy band characteristics of ordinary negative electron affinity emitter gaas, the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented, and the special negative electron affinity emitter gaas was designed
摘要根據通常負電子親和勢二次電子發射材料砷化鎵的能級特點,提出延長負電子親和勢二次電子發射材料砷化鎵的逸出深度的理論設計,設計出了特殊的負電子親和勢二次電子發射材料砷化鎵。Yet the outstanding shortcoming of open - tube ga diffusion is the apparent negative resistance effect in the ic - vce characteristic curve, which is not what we hope
盡管如此開管擴鎵的突出缺點是在特性曲線中的負阻效應較為明顯,負阻現象的存在是我們不希望的。The green emitting gap has quantum efficiencies as high as 0. 6 % recorded for laboratory. present marketed units, however, have much greater than an order of magnitude less efficiency
按實驗記錄,發綠光的磷化鎵的量子效率高達0 . 6 % ,但目前請市售產品效率則低一個數量級還多In this paper, the author demonstrated the basic principle, development history and characters of high - press liquid - enveloped czochralski method ( leg ), and its application in producing the gap semi - conductors, at the same time of introducing the general situation of them
本文論述了高壓液封直拉法的基本原理、發展歷史、特點,該法在半導體材料行業的應用及應用中的影響因素,化合物半導體材料磷化鎵的概況、高壓液封直拉法在制備該材料時的應用。Determination of gallium in coals
煤中鎵的測定方法Gallium - electrolyte compound
鎵的電解液混合物The surface passivation of gaas is an unsolved problem for a long time
砷化鎵的表面鈍化是一個長期未能很好解決的問題。The coordination chemistry of gallium is a rapidly developing area of research in recent years
摘要近年來,鎵的配位化學的研究發展迅速。Importantly, gallium ' s action was intensified in low iron condition, like those that exist in the human body
更重要的是,鎵的這種作用在低鐵濃度的環境中增強,正適用於人體感染時的狀態。They are confident of this thanks to the development of a compound, gallium nitride, that can be used instead of the more conventional sapphire, thereby halving the cost of the leds
小組成員對此極有信心,因為他們開發了一種氮化鎵的化合物,取代更多的傳統青玉,從而使發光二極體成本縮減一半。分享友人