鎵銦 的英文怎麼說

中文拼音 [jiāyīn]
鎵銦 英文
algainn
  • 鎵 : 名詞[化學] gallium （31號元素, 符號 ga）
  • 銦 : 名詞[化] （金屬元素） indium （im）
  1. Hcl buffer solution at ph 5. 5, a sensitive adsorptive complex wave of in - lumogallion was obtained by single - sweep polarography. the change of peak height with the concentration of indium is linear in the range from 1. 0 10

    - hcl底液中可獲得銦-熒光鎵體系靈敏的絡合吸附波。測定銦的線性范圍為1 . 010
  2. These compounds pair one or more elements from the third column of the periodic table ( such as aluminum, gallium or indium ) with an element from the fifth column ( typically phosphate, arsenic or antimony )

    這些化合物將周期表第三欄里的一種或多種元素（例如鋁、鎵或銦）與第五欄里的一種元素（通常是磷、砷或銻）配在一起。
  3. Aluminium gallium indium phosphide, algainp

    磷化鋁銦鎵
  4. Mol l. the composition of the complex was detected as in : lmg 1 : 2. the conditional stability constant was determined as

    Mol l ，測得電活性絡合物的組成為銦熒光鎵12 ，條件形成常數
  5. Indium ; lumogallion ; single - sweep polarography ; cyclic voltammograms

    銦熒光鎵單掃極譜法循環伏安法
  6. Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide

    如果成功，工程師就能在成本低廉的矽晶片上同時製作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，製作成本高昂的半導體雷射。
  7. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。
  8. Vital chemicals co., ltd., a large foreign invsted company, is a leading producer of selenium 、 tellurium 、 bismuth 、 cadmium 、 antimony 、 indium 、 gallium 、 sulfur and its chemicals

    先導（清遠）稀有金屬化工有限公司是一家專業生產和銷售硒、碲、鉍、鎘、銻、銦，鎵，硫等高純金屬材料及其化合物的大型外資高新技術企業。
  9. Icp - aes determination of the metal components ga in sn in dental material

    法測定金屬牙科材料中鎵銦錫
  10. Simultaneous determination of gallium, indium and thallium in geochemical samples by inductively coupled plasma mass spectrometry

    電感耦合等離子體質譜法直接同時測定地球化學樣品中鎵銦鉈
  11. Studies on polarographic adsorptive complex wave of indium - lumogallion studies on polarographic adsorptive complex wave of indium - lumogallion

    銦-熒光鎵極譜絡合吸附波的研究
  12. Methods for chemical analysis of gallium - the spectrochemical method for the determination of lead, copper, nickel, aluminum, indium and zinc content

    鎵化學分析方法化學光譜法測定鉛，銅，鎳，鋁，銦和鋅量
  13. A simple route for the synthesis of unique 1d nanostructures, including brush - like gallium nitride nanostructure, oriented amorphous silicon nanowires and in @ sio2 nanocables, was developed on the basis of vls and sls mechanisms

    藉由vls與sls機制，我們成功地合成出具有特殊方向性的刷狀氮化鎵奈米晶體、非晶相二氧化矽奈米線，及二氧化矽包覆銦之一維奈米結構。
  14. Abstract : the adsorption of humic acid with gallium and indium was studied. the ideal equation of adsorption isotherm about the experimental data was proposed, and the reaction mechanism was discussed

    文摘:對腐植酸與鎵、銦的吸附作用作了實驗研究，提出了擬合實驗數據的理想吸附等溫方程，並對作用機理予以推斷。
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