鐵電膜 的英文怎麼說

中文拼音 [tiědiànmó]
鐵電膜 英文
ferroelectric film
  • 鐵 : Ⅰ名詞1 （金屬元素） iron （fe） 2 （指刀槍等） arms; weapon 3 （姓氏） a surname Ⅱ形容詞1 （形容...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  1. A coplanar waveguide tunable bandpass filter using ferroelectric thin film

    基於共面波導傳輸線的鐵電薄膜可調帶通濾波器
  2. Advances of sol - gel derivation of pzt ferroelectric thin films

    鐵電薄膜新進展
  3. Ferroelectric films and ferroelectric random access memory

    鐵電薄膜及鐵電存儲器研究
  4. Effect of interface on properties of pzt ferroelectric thin films

    鐵電薄膜性能的影響
  5. The study of the properties of double - layer ferroelectric film

    雙層鐵電薄膜的性質研究
  6. A study of indium doped tin oxide as electrode of ferroelectric films

    用作鐵電薄膜電極的研究
  7. Depositing bi4ti3o12 ferroelectric thin films on ito glass substrate

    玻璃襯底上制備鈦酸鉍鐵電薄膜
  8. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  9. The electrical properties of yttrium - modified lead zirconate titanate ferroelectric thin films

    釔摻雜鋯鈦酸鉛鐵電薄膜的電性能研究
  10. The electrical properties of cobalt - modified lead zirconate titanate ferroelectric thin films

    摻雜鈷對鋯鈦酸鉛鐵電薄膜電性能的影響
  11. Research progress of heterostructures of lead zirconate - titanate thin films on silicon substrate

    硅基鋯鈦酸鉛鐵電薄膜異質結構的研究進展
  12. Lead lanthanum zirconate titanate ( plzt ) and strontium barium titanate ( bst ) thin films are excellent materials for the potential applications in optical waveguide and optical commutation, due to their excellent electrical, optical and electro - optical ( e - o ) properties

    Plzt 、 bst鐵電薄膜具有良好的光學、電學和電光性能，因而在光波導、電光開關等方面具有廣闊的應用前景。
  13. Within the framework of the tim ( transverse field model ), using the eft ( effective field theory ) and the mft ( mean field theory ), considering the long - range effects and the interfacial effect, we studied the transition properties of the ferroelectric thin film, pyroelectric coefficient and dielectric susceptibility and triple hysteresis loop of the ferroelectric bilayer structure theoretically

    我們應用平均場、有效場等方法，在橫場伊辛模型框架內，考慮贗自旋間長程相互作用和界面效應，對鐵電薄膜、雙層薄膜的相變、熱釋電、介電，以及電滯回線等性質進行了較深入的研究。
  14. Based on recent published research, explanation about the experimental results was also given. remanent polarization and coercive field decreased with the increasing of la content. the crystal structure transformed from tetragonal to cubic when la concentration increased to 28mol %

    在薄膜的鐵電性質方面，隨著摻鑭含量的升高，剩餘極化和矯頑場逐漸降低；當鑭含量達到28mol時薄膜的結構從四方相轉變到立方相。
  15. It is found that the enhancement of the long - range interaction will result in the increment of the phase transition temperature, the increase of the critical transverse field and the decrease of the critical size

    採用超越平均場理論計算了長程相互作用對鐵電薄膜的物理性質的影響，發現長程相互作用的增強將使鐵電薄膜的居里溫度升高、臨界橫場增大、臨界尺寸下降。
  16. Compared with bst materials, especially in thin films, ps t has smaller ferroelectric critical size, lower crystallization temperature, and compatible fabrication with si micro - electronics, so it can meet the need of the high quality si - based integrate circuit ( ic ). moreover, it is important to promote the development of the miniaturization and integration for the modern devices

    與bst相比，特別作為薄膜材料， pst的鐵電臨界尺寸較小，晶化溫度較低，制備工藝與si微電子工藝兼容，更能夠滿足高性能的si基集成電路的需要，對推動現代器件發展的小型化和集成化具有十分重要的意義。
  17. The pzt ferroelectric films " fatigue characteristics were studied, and here the electrical load was produced by rt6000s ; it was known that with the voltage increasing or frequency reducing, the degree of ferroelectric fatigue decay would increase

    然後用rt6000s測試儀加載電載荷，總結得出pzt薄膜的鐵電疲勞規律，即加載電壓增加或加載頻率降低時，鐵電極化衰減程度變大。
  18. The preparation of pzt ferroelectric thin films and its application in pyroelectric ir sensor

    鋯鈦酸鉛鐵電薄膜的制備及在紅外探測器中的應用
  19. In the framework of the transverse ising model ( tim ), landau phase transition theory and the electrostatic field theory, we study the physical properties of the ferroelectric thin film, bilayer, sandwich structure, multilayer with a non - polarization slab and a two - dimension polar lattice model with polar defects. the main work and results are as follows : first, the long - range interaction in ferroelectric material is sometimes neglected in the previous studies. we introduce the long - range interaction in the framework of the tim and the landau theory

    本文在橫場伊辛模型、朗道相變理論以及靜電場等理論的框架內，對鐵電薄膜、鐵電雙層膜、鐵電三明治結構以及含有雜質層的鐵電多層膜和含有偶極缺陷的二維偶極點陣系統等多層鐵電系統的相變、熱電、介電、電滯行為等物理性質進行了深入研究。
  20. Role of heat treatment on the formation of perovskite phase of pmn - pt relaxor ferroelectric thin films derived from inorganic - chelating - gel

    弛豫鐵電膜鈣鈦礦相形成的作用
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