間隙導納 的英文怎麼說

中文拼音 [jiānxìdǎonà]
間隙導納 英文
gap admittance
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 隙 : 名詞1 （縫隙; 裂縫） crack; chink; crevice 2 （空閑） gap; interval 3 （漏洞; 機會） loophole; op...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 納 : Ⅰ動詞1 （收進來; 放進來） receive; admit 2 （接受） accept; take in 3 （享受） enjoy; take deligh...
  • 間隙 : （空隙） interval; gap; freedom; space; [機械工程] clearance; separation; stricture; clear; inter...
  1. This demonstrates that gpp molecules have intercalated into the nanoscale interlayers of graphite sheets as well as the pores ( from nanoscale to microscale ) of eg networks. the large structure - occupation of the formed eg - gpp networks results in low ? c, high b and excellent conductivity of the nanocomposites, for instance, the electrical conductivity at room temperature is up to 2. 49x10 - 3 s / cm at 3. 90 vol % eg content. 2

    證明gpp分子通過溶液插層已充分插入eg網路納米尺度的石墨片層之間和從納米到微米尺度的孔隙之中，所形成的eg ? gpp復合網路具有大的結構佔有體積，因而材料具有低_ c 、高b和優異的導電性， 3 . 90vol eg含量下，室溫體積電導率達2 . 49 10 ~ （ - 3 ） s cm 。
  2. Based on the theory mode, the delay time between the beginning of optical illumination and the onset of lock - on switching was calculated, and the transiting speed of electrons, the traversing velocity of the current filament, was obtained as well. the calculated results matched well the experimental results. taking advantage of the ultra - fast response characteristics of the devices, si - gaas pcss ' s are successfully applied to the broadening test of nanosecond laser pulses

    應用單極電荷疇模型數值計算了lock - on效應的光、電時間延遲和載流子的渡西安理工大學碩士學位論文越速度（絲狀電流穿越開關間隙的速度） ，所得計算結果與實驗測試結果基本吻a利川半絕緣gaas光屯導開關的超快光l匕11向應燈性，成功地應川下納秒激光脈沖展寬試驗中，證明了開關可廠泛應川在超快光電響應和光電反饋網路中。
  3. The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively

    或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬
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