閾漂移 的英文怎麼說
中文拼音 [yùbiāoyí]
閾漂移
英文
threshold drift-
In this essay i argue that the writing of american jazz age novelist f. scott fitzgerald responds to the developing national culture of his time, here described as an evolving relation between the marginality of the region and the hegemony of the center. like many of the characters in his novels, fitzgerald ' s perceived liminality from nation and canon - his work did not achieve repute until after his death - produced, paradoxically, dependence on those values the writer felt most distant from. to a far greater extent than hemingway, fitzgerald fictionalized the commodity culture of the american center which he, in time, came to reject in favor of a moral posture. fitzgerald ' s migration from the perceived margins of american literary discourse to status as a posthumous, centered canonical figure has three specific dimensions - the geographical, the canonical, and the moral - all of which combine to produce a significant ambivalence, beyond " modernist " credentials, in his life and legacy
本文認為，美國爵士時代的小說家菲茨傑拉德的作品對于作者所處時代和處于發展之中的民族文化（即區域邊緣與國家霸權之間的演進關系）作出了回應.正如其小說中的許多人物一樣，菲茨傑拉德從國家和典律中感知到閾限性（他自己的作品直到死後才獲得盛譽） ，這使得他依賴于自己認為是最為邊遠的價值觀念.與海明威相比較，菲茨傑拉德在更大程度上將位於美國中心的商品文化小說化，而最終他又出於道德考量將它予以拒絕.菲茨傑拉德從明顯的美國文學話語邊緣向去世之後被經典化的中心地位的漂移表現在地理、典律、道德三個方面.三者交織，使得學界關於他的紛爭超越了現代主義者身份問題，在關於他的人生和文學遺產問題上也是褒貶不一，眾說紛紜The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature
研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。Thirdly, in the environment of labview, several kinds of vis used for sensor signal test are designed, including wave generation, time domain measurement, filter disposal, frequency analysis, etc. after that, wavelet analysis in the application of one - dimensional signal de - noise is studied, threshold and translation invariance wavelet de - noise are realized, and wavelet de - noise vi for zero drift signal of the fiber optic gyro in fcs is designed using labview
接著，在labview環境下開發了多種用於傳感器信號測試的虛擬儀器，具有波形發生、時域測量、濾波處理、頻譜分析等多種功能。隨后，研究了小波分析在一維信號消噪中的應用，實現了labview環境下的閾值法和平移不變量法小波消噪，並利用labview設計了飛控系統中光纖陀螺零漂信號的小波消噪儀。An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity
Mosfet閾值電壓漂移輻照效應輻照敏感性Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低劑量輻照條件下的mosfet因輻照導致的閾值電壓漂移的模擬分享友人