閾能中子 的英文怎麼說

中文拼音 [yùnéngzhōngzi]
閾能中子 英文
threshold neutron
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 能 : 能名詞（姓氏） a surname
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正
  3. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  4. The relative momentum of two final particles and the cross section are zero at the threshold energy for an endothermic reaction, while the relative momentum of two initial particles is zero and the cross section at the threshold energy for an exothermic reaction is infinite

    在吸熱反應的閾能處，出射粒子的相對動量以及截面均為零。在放熱反應的閾能處，入射粒子的相對動量為零，截面趨于無窮大。由於強子的動量僅提供如此低的質心系能量，強子物質中x 。
  5. It was found that the simple triangular shape distribution would cause " two - peaked " energy distribution near the threshold energy, which must affect the group transfer matrix

    閾能處三角形能譜分佈的近似描述，導致產生了群散射矩陣的「雙峰」現象，而閾能處矩形能譜分佈使平均次級中子能量（
  6. At the same time, liquid crystal science harvests satisfyingly, its research field has extended to physics, chemistry, electronics, biology, etc. surface orientation of liquid crystal molecule ( lcm ) is a key technique in the application of lcd, the effect of orientation plays an important role in the basic performances, such as uniformity, visual angle, aberration, response, threshold of voltage and so forth

    液晶自1976年在世界上首次應用於計算器的顯示屏以來，就以其輕量、薄型、能耗低、顯示面積大等優勢在顯示應用方面得到迅猛發展，而同時，液晶科學也得到了全面發展，研究領域遍及物理、化學、電子學、生物學等各個學科。液晶分子取向控制技術是液晶板顯示應用中的一個關鍵技術，取向程度的好壞對液晶顯示器的均勻性、視角、色差、響應速度、閾值電壓等基本性能都有重要影響。
  7. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  8. In the honeycomb lattice with random transverse field, a smaller crystal field cannot change the percolation threshold of critical transverse field. the reentrant phenomena shall appear at the range of certain random concentration when the transverse field takes a larger value, while the reentrant phenomena do not occur and when the transverse field take a smaller value

    隨機橫場作用下的蜂窩格子中，較小晶場的存在並不能改變臨界橫場閾值；取較大橫場值時在某些隨機濃度范圍內出現重入相變現象，而取較小橫場值時則沒有重入現象產生。
  9. The thesis studies the films " structures and properties by means of scanning electron microscope ( sem ), transmission electron microscope ( tem ), x - ray photoelectron spectrometer ( xps ), raman spectrometer, uv - vis spectrometer, thin films analysis apparatus, and target materials. it is the difference of atom ordinal number and sputter area that results in ce prior sputter and ce / ti molar ratio in films is 50 % more than ce / ti molar ratio in practical target design

    利用各種分析測試方法（ sem 、 tem 、 xrd 、 xps 、 raman 、 uv - vis 、薄膜分析儀等）對薄膜的結構與性能進行了全面研究，得出如下結論：靶材的濺射由於ce 、 ti的原子序數不同，濺射閾不同而造成ce的優先濺射，薄膜中的ce ti摩爾比與實際靶材設計的ce ti摩爾比高50左右。
  10. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
  11. It discusses the feature of color, color model, image segment principle and method, and then analyzes the demands and characters of robot soccer vision system. an adaptive rgb threshold value color image segment segmentation method based on rgb and hsi model is presented, and it realize a realtime, veracity, adaptability and intelligent chromatic image recognition

    討論了顏色特性、顏色模型及彩色圖像分割的基本原理和方法，分析mirosot視覺子系統中實時彩色圖像識別的特點和要求，提出一種結合rgb和hsi模型的自適應rgb閾值的實時彩色圖像分割方法，實現了彩色圖像識別的實時性、準確性、適應性及智能化。
分享友人
分享到 Line

分享到臉書