陰極濺射 的英文怎麼說

中文拼音 [yīnjíjiànshè]
陰極濺射 英文
catbode sputtering
  • 陰 : Ⅰ名詞1 （中國古代哲學認為宇宙中通貫物質和人事的兩大對立面之一） （in chinese philosophy medicine ...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  1. Product range includes diaphragm, piston, peristaltic, rotary vane, linear, and vibratory armature pumps for medical, analytical, environmental, and automotive uses

    -研發與製造旋片式真空泵往復式真空泵冷陰極濺射離子泵爪式無油真空泵等系列產品。
  2. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
  3. As the partial pressure of o2 increases the cathode voltage of the target increases in order to maintain the same current intensity and the sedimentation rate gradually decreases

    氧氣分壓的增大，維持同樣濺射電流強度的靶陰極電壓增大，薄膜的沉積速率逐漸減小。
  4. The main purpose of this article - is to simulate the whole process of the generation and transportation of the vapor phase particles of the film in rf magnetron sputtering, which contains transportation of ions in rf glow discharge, sputtering of target and transportation of sputtered atoms, via models that are established on the basis of the physics of sheath theory for the rf magnetron glow discharge, sputtering theory and transportation theory

    本論文對射頻磁控濺射中入射離子的產生和輸運、離子對靶材的濺射、濺射原子的輸運過程進行了綜合考慮，根據射頻輝光放電的陰極殼層理論、粒子的輸運理論、離子對靶材的濺射理論建立模型，進行了計算機模擬。
  5. It was found that the thin films and target were of similar composition. the optimal deposition temperature was 150 - 200 and the tcr of thin films were strongly influenced by the target temperature

    發現磁控濺射法可以沉積得到與靶材組分一致的錳銅薄膜，沉積的最佳溫度為150 200 』 c ，並且陰極靶的溫度對薄膜tcr有很大的影響。
  6. The failure mechanisms of the rlg are very complex, but the cathode sputtering and the polluting of the reflector are the most important factors among them

    激光陀螺儀失效機理非常復雜，其中對壽命影響最為重要的因素是陰極濺射和反射鏡的污染及損傷。
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